• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05c
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• pp.47-52
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• 2004

$HgGa_2S_4$ single crystals were grown by the chemical transport reaction method. The $HgGa_2S_4$ single crystal crystallized into a defect chalcopyrite structure $(I\bar{4})$. The lattice constants of the single crystal were found to be a=5.635 ${\AA}$ and c=10.473 ${\AA}$. The direct and indirect optical energy gaps were found to be 2.84 eV and 2.78 eV, respectively. Photoluminescence peaks of $HgGa_2S_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.969-974
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• 2003

HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05c
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• pp.3-7
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• 2004

$HgGa_2S_4:CO^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. 1n the optical absorption spectrum of the $HgGa_2S_4:CO^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absorption peaks are assigned to be due to the electronic transitions between the split energy levels of $Co^{2+}$ sited in the $S_4$ symmetry point.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.579-583
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• 2003

HgGa$_2$S$_4$: Co$^{2＋}$ single crystal were grown by the chemical transport reaction(CTR) method. In the optical absorption spectrum of the HgGa$_2$S$_4$: Co$^{2＋}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absolution peaks are assigned to be due to the electronic transitions between the split energy levels of Co$^{2＋}$ sited in the S$_4$ symmetry point.

• Proceedings of the KIEE Conference
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• 2004.07e
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• pp.55-57
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• 2004

$HgGa_{2}S_{4}Co^{2+}$ single crystal were grown by the chemical transport reaction(CTR) method. In the optical absorption spectrum of the $HgGa_{2}S_{4}Co^{2+}$ single crystal measured at 298K, three groups of impurity optical absorption peaks consisting of three peaks, respectively, were observed at 673nm, 734nm, and 760nm, 1621nm, 1654nm, and 1734nm, and 2544nm, 2650nm, and 2678nm. At 10K, the three peaks(673nm, 734nm, and 760nm) of the first group were split to be twelve peaks. These impurity optical absorption peaks are assigned to be due to the electronic transitions between the split energy levels of $Co^{2+}$ sited in the $S_4$ symmetry point.

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.332-333
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• 2004

• Resources Recycling
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• v.4 no.3
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• pp.10-18
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• 1995

Recycling of GaAs scrap which occurs durmg the manufachre of GaAs waters is. therefore, required to solve the environmentalproblcrns caused by arsenic metal and to reutilize gallium which is a expensive metal. A thema-analyticalstudy (thermogravimeg. and derivative thermogravimetry) tor the evaporation behavior of Fa, As from Gak\ulcorner scrap powdersat vacuum atmosphere(2-2.5X 10'mmHg); was primarily performed to identi j the possibility of Ga extraction. Until79YC, the weight change of G d s porvder does not take place, at 800-970C range GaAs vaporizes as the GaAs compound,and over 1WO"C it decamposes mto Ga and As md then As vaporizes rapidly as a result of the difference af vaporprcssure for Ga and As, liquid Ga rcmains eventually.mains eventually.

• BMB Reports
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• v.32 no.2
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• pp.127-132
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• 1999

The NAD(P)H-quinone oxidoreductase (EC 1. 6. 99. 2) was purified from S. cerevisiae. The native molecular weight of the enzyme is approximately 111 kDa and is composed of five identical subunits with molecular weights of 22 kDa each. The optimum pH of the enzyme is pH 6.0 with 1,4-benzoquinone as a substrate. The apparent $k_m$ for 1,4-benzoquinone and 1,4- naphthoquinone are 1.3 mM and $14.3\;{\mu}M$, respectively. Its activity is greatly inhibited by $Cu^{2+}$ and $Hg^{2+}$ ions, nitrofurantoin, dicumarol, and Cibacron blue 3GA. The purified NAD(P)H-quinone oxidoreductase was found capable of reducing aromatic nitroso compounds as well as a variety of quinones, and can utilize either NADH or NADPH as a source of reducing equivalents. The nitroso reductase activity of the purified NAD(P)H-quinone oxidoreductase is strongly inhibited by dicumarol.

• Proceedings of the Korean Society of Applied Pharmacology
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• 1993.04a
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• pp.127-127
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• 1993

작약의 메타놀에기스를 작용성분을 추적하면서 분리하였으며 EtOAc 분획으로부터 gallic acid methylester(GA-1) 및 paeonoldmf 혈소판 응집억제 작용 물질로서 분리하였으며 Paeonol은 혈소판 응집억제 작용이 이비 보고된바 있다. GA-1은 오가피로부터 혈소판 응집억제 작용물질로서 분리된 DBA-1과 구조적으로 매우 유사하며 혈소판 응집억제 작용물질로서 알려진 aspirin의 구조와 유사하다. Platelet aggregometer을 이용하여 DBA 및 GA analogs 13종(DBA-1-10 및 GA-1-3)들이 ADP 또는 collagen에 의하여 유도된 혈소판 응집에 대하여 억제작용을 보이는가를 검색하였다. 이들중 aspirin과 유사하게 억제작용을 보인 DBA-1-3-7-9-10, GA-3 및 paeonol에 대하여 mouse를 이용한 in vivotlfgja을 시행하였다. 즉 endotoxin 또는 collagen 과 epinephrine을 정맥주사하여 intravascular thrombosis를 일으켜 혈소판수를 감소시키며 이때 이들 물질들의 혈소판 감소 억제효과를 관찰하였다. 대조약물로서 사용한 aspirin은 collagen과 epinephrine에 의한 혈소판 감소를 현저히 억제한 반면 endotoxin에 의한 혈소판 감소에는 효과가 없었다. DBA-9, -10, GA-3 및 paeonol은 endotoxin에 의한 혈소판감소에 대하여 약한 억제효과를 보였으며, 검색시료 전부가 collagen과 epinephrine에 의한 혈소판 감소에는 aspirin보다 작용이 적었으나, DBA-10, GA-3 및 paeonol은 현저하게 억제효과 있었다. 또한 collagen과 epinephrine 동시 투여에 의한 치사 실험에서는 DBAD-7, GA-3 및 paeonol이 aspirin과 같거나 강한 사망 억제 효과가 있었다.cyclopropyl-7-(2-furanyl) -6-fluoro-1,4-dihydro-4-oxo-3-quinoline carboxylic acid (compound 4), 1-cyclopropyl-7-(2-thiophenyl)-6-fluoro-1,4-dihydro-4-oxo-3-quinoline carboxylic acid (compound 6) ,1-cyclopropyl-7-(3-pyridinyl)-6-fluoro-1,4-dihydro-4-oxo-3-quinoline carboxylic acid (compound 8), 1-cyclopropyl-7-(2-fluoro-3-pyridinyl)-6-fluoro-1,4-dihydro-4-oxo-3-quinoline carboxylic acid (compound 10)를 합성하였다.10^{－7}$ M)에 의한 단백인산화에 대하여는 더 미약한 억제-효과를 나타내었다. 이상의 결과는 PDE-1과 항우울약들의 항혈소판작용은 PKC-기질인 41-43 kD와 20 kD의 인산화를 억제함에 기인되는 것으로 사료된다.다. 것으로 사료된다.다.바와 같이 MCl에서 작은 Dv 값을 갖는데, 이것은 CdCl$_{4}$$^{2-}$ 착이온을 형성하거나 ZnCl$_{4}$$^{2-}$ , ZnCl$_{3}$$^{-}$같은 이온과 MgCl$^{+}$, MgCl$_{2}$같은 이온종을 형성하기 때문인것 같다. 한편 어떠한 용리액에서던지 NH$_{4}$$^{+}$의 경우 Dv값이 제일 작았다. 바. 본 연구의 목적중의 하나인 인체유해 중금속이온인 Hg(II), Cd(II)등이 NaCl같은 염화물이 함유된 시료용액에 공해이온으로 존재할 경우 흡착에 의한 제거가

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.406-410
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• 2000

Using the hot-wall epitaxy method, we grew a $Hg_{1-x}Cd_xTe$ (MCT) thin film in-situ after growing (111) CdTe of 9 $mu \textrm{m}$ as a buffer layer. The value of FWHM of double crystal x-ray diffraction rocking curve was 125 arcsec and the surface morphology was clean with a small roughness of 10 nm. From measuring the photocurrent of the grown MCT thin film, the maximum peak wavelength and the cut-off wavelength were 1.1050 $\mu\textrm{m}$ (1.1220 eV) and 1.2632 $\mu\textrm{m}$ (0.9815 eV), respectively. This peak wavelength corresponds to the peak of the band gap due to the intrinsic transition of the photoconductor. Therefore, the MCT thin film could be used as the photoconducting detector sensing a near-IR wavelength band from 1.0 to 1.6 $\mu\textrm{m}$.