• Korean Journal of Materials Research
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• v.3 no.2
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• pp.111-120
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• 1993

Abstract In this study, the Mo-Hf-O ingots containing 0.31-1.14at % Hf and 0.08-1.00at % 0 were prepared by plasma arc melting. The change of microstructure depending on the condition of heat treatmen~ was analysed by optical microscophy, auger electron microscophy, and transmission electron microscophy. Molybdenum powder with the oxygen content of 830ppm was compacted, and then melted. The oxygen content of molybdenum ingots was detected to be 40 -130ppm. As the contents of Hf and 0 increased, the grain size of ingots decreased. When molybdenum igot containing l.14at % Hf and 1.00at % C was heat treated, p-molybdenum carbide in grains was transformed into ${\alpha}$-molybdenum carbide at 130$0^{\circ}C$. Between 140$0^{\circ}C$ and 150$0^{\circ}C$, the precipitation of hafnium carbide was due to the reaction of solute Hf and C, and the hafnium carbide was saturated at grain boundaries at 150$0^{\circ}C$. When the sample was heat treated from 150$0^{\circ}C$ to 170$0^{\circ}C$, Hafnium oxide more stable thermodynamically precipitated both at grain boundaries and in grains after hafnium carbide had been dissolved at grain boundaries.

• Korean Chemical Engineering Research
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• v.60 no.2
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• pp.313-319
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• 2022

AlGaN/GaN based HfO₂ MOSHEMT (metal oxide semiconductor high electron transistor) with different gate recess depth was simulate to demonstrate a successful normally-off operation of the transistor. Three types of the HEMT structures including a conventional HEMT, a gate-recessed HEMT with 3 nm thick AlGaN layer, and MIS-HEMT without AlGaN layer in the gate region. The conventional HEMT showed a normally-on characteristics with a drain current of 0.35 A at V_G = 0 V and V_DS = 15 V. The recessed HEMT with 3 nm AlGaN layer exhibited a decreased drain current of 0.15 A under the same bias condition due to the decrease of electron concentration in 2DEG (2-dimensional electron gas) channel. For the last HEMT structure, distinctive normally- off behavior of the transistor was observed, and the turn-on voltage was shifted to 0 V.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.8
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• pp.839-845
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• 2011

We performed numerical simulations of freely propagating premixed flames at atmospheric pressure to investigate the influence of trifluoromethane on $CH_4/O_2/N_2$ flames under oxygen enrichment. Trifluoromethane significantly contributed toward a reduction in flame speed, the magnitude of which was larger in terms of the physical effect than the chemical effect. More trifluoromethane could be added and consumed on oxygen-enriched $CH_4/O_2/N_2$ flames. $CHF_3$ was decomposed primarily via $CF_3{\rightarrow}CF_2{\rightarrow}CF{\rightarrow}CF:O{\rightarrow}CO$ and $CHF_3+M{\rightarrow}CF_2+HF+M$ played an important role in oxygen-enhanced flames. When an inhibitor was added to oxygen-enriched flames, the position of the maximum concentration of active radicals was shifted to a relatively low temperature range, and the net rate of OH became higher than that of H.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.260-263
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• 2013

A semiconducting single-walled carbon nanotube (SWCNT) field-effect transistor (FET) in a top-gate model was constructed. The effect of different high-${\kappa}$ dielectric materials ($Al_2O_3$, $HfO_2$ and HfSiON) and various temperatures with a wide range from 50K to 500K on the performance of such nominal device were investigated. Several key device parameters including the on/off ratio of the current, transconductance ($g_m$), subthreshold swing, and carrier mobility were used to evaluate the device performance. The simulated results fit well with the experiment results previously published.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.449-453
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• 2010

In this paper, the electrical characteristics of Fin-type SONOS(silicon-oxide-nitride-oxide-silicon) flash memory device with different trapping layers are analyzed in depth. Two kinds of trapping layers i.e., silicon nitride($Si_3N_4$) and hafnium oxide($HfO_2$) are applied. Compared to the conventional Fin-type SONOS device using the $Si_3N_4$ trapping layer, the Fin-type SOHOS(silicon-oxide-high-k-oxide-silicon) device using the $HfO_2$ trapping layer shows superior program/erase speed. However, the data retention properties in SOHOS device are worse than the SONOS flash memory device. Degraded data retention in the SOHOS device may be attributed to the tunneling leakage current induced by interface trap states, which are supported by the subthreshold slope and low frequency noise characteristics.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.284-288
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• 1997

FT-IR and FT-Raman spectra were measured for 15Li$_{2}$O.3Al$_{2}$O$_{3}$.78SiO$_{2}$. 4K$_{2}$O glass system after UV irradiations. Optimum UV irradiation time of Li$_{2}$O.SiO$_{2}$ crystalline phase was 60 seconds and crystalline phase of Li$_{2}$O.SiO$_{2}$ was leached out on 5% HF. 977 cm$^{1}$ band of FT-Raman spectra can be attributed to two-non bridging oxygen in unit cell for 1 hour and optimum crystallization was confirmed for 3 hrs, 630.deg. C.

• Journal of the Korean Chemical Society
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• v.55 no.3
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• pp.392-399
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• 2011

Two conformations of benzoic acid derivatives ($NH_2$, OH, H, F, Cl, CN, NO, $NO_2$) have been investigated at MP2, DFT and HF level using the 6-311++G(d,p) basis set. It was found that the cis isomers are more stable. Hydrogen bonding formation of benzoic acids has been estimated from stabilization energies. The calculated hydrogen-bonding energies of dimers showed a cooperative interaction in the cyclic ones. It was found that an electron-releasing group (ERG) into the phenyl rings resulted in the formation of more stable hydrogen bonding. Red shift of O-H bond was found from -565.3 to -589.3 for dimers. The natural bond orbital (NBO) analysis was applied to characterize nature of the interaction.

• Journal of the Korean Chemical Society
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• v.47 no.6
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• pp.608-613
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• 2003

In order to remove particles on surface of post-oxide CMP wafer, new cleaning solution was prepared by mixing with DHF (Diluted HF), nonionic surfactant PAAE (Polyoxyethylene Alkyl Aryl Ether), DMSO (Dimethylsulfoxide) and D.I.W.. Silicone wafers were intentionally contaminated by silica, alumina and PSL (polystylene latex) which had different zeta potentials in cleaning solution. This cleaning solution under megasonic irradiation could remove particles and metals simultaneously at room temperature in contrast to traditional AMP (mixture of $NH_4OH,\;H_2O_2$ and D.I.W) without any side effects such as increasing of microroughness, metal line corrosion and deposition of organic contaminants. This suggests that this cleaning solution would be useful future application with copper CMP in brush cleaning process as well as traditional post CMP cleaning process.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.111-114
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• 1998

Lithium Niobate {{{{ { LiNbO}_{ 3} }}}} single crystals grown by Czichralski method at the congruent composition, have ferroelectric microdomains. These microdomins were investigated by chemical etching with hydrofluoric acid (HF) AND NITRIC ACID ({{{{ { HNO}_{3 } }}}}), and by us ing optical microscopy, scanning electron microscopy and atomic force microscopy

• Korean Journal of Mineralogy and Petrology
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• v.34 no.2
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• pp.107-120
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• 2021

The Komdok Pb-Zn deposit, which is the largest Pb-Zn deposit in Korea, is located at the Hyesan-Riwon metallogenic zone in Jiao Liao Ji belt included Paleoproterozoic Macheolryeong group. The geology of this deposit consists of Paleoproterozoic metasedimentary rocks, Jurassic Mantapsan intrusive rocks and Cenozoic basalt. The Komdok deposit which is a SEDEX type deposit occurs as layer ore and vein ore in the Paleoproterozoic metasedimentary rocks. Based on mineral petrography and paragenesis, dolomites from this deposit are classified four types (1. dolomite (D₀) as hostrock, 2. early dolomite (D₁) associated with tremolite, actinolite, diopside, sphalerite and galena from amphibolite facies, 3. late dolomite (D₂) associated with talc, calcite, quartz, sphalerite and galena from amphibolite facies, 4. dolomite (D₃) associated with white mica, chlorite, sphalerite and galena from quartz vein). The structural formulars of dolomites are determined to be Ca_1.00-1.20Mg_0.80-0.99Fe_0.00-0.01Zn_0.00-0.02(CO₃)₂(D₀), Ca_1.00-1.02M_0.97-0.99Fe_0.00-0.01Zn_0.00-0.02(CO₃)₂(D₁), Ca_0.99-1.03Mg_0.93-0.98Fe_0.01-0.05Mn_0.00-0.01As_0.00-0.01(CO₃)₂(D₂) and Ca_0.95-1.04Mg_0.59-0.68Fe_0.30-0.36Mn_0.00-0.01 (CO₃)₂(D₃), respectively. It means that dolomites from Komdok deposit have higher content of trace elements (FeO, MnO, HfO₂, ZnO, PbO, Sb₂O₅ and As₂O₅) compared to the theoretical composition of dolomite. These trace elements (FeO, MnO, ZnO, Sb₂O₅ and As₂O₅) show increase and decrease trend according to paragenetic sequence, but HfO₂ and PbO elements no show increase and decrease trend according to paragenetic sequence. Dolomites correspond to Ferroan dolomite (D₀, D₁ and D₂), and Ferroan dolomite and ankerite (D₃), respectively. Therefore, 1) dolomite (D₀) as hostrock was formed by subsequent diagenesis after sedimentation of Paleoproterozoic (2012~1700 Ma) silica-bearing dolomite in the marine evaporative environment. 2) Early dolomite (D₁) was formed by hydrothermal metasomatism origined metamorphism (amphibolite facies) associated with intrusion (1890~1680 Ma) of Paleoproterozoic Riwon complex. 3) Late dolomte (D₂) was formed from residual fluid by a decrease of temperature and pressure. and dolomite (D₃) in quartz vein was formed by intrusion (213~181 Ma) of Jurassic Mantapsan intrusive rocks.