• 접착 및 계면
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• 제7권2호
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• pp.19-25
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• 2006

미생물 합성 고분자인 poly(hydroxylalkanoate)s (PHAs)의 초기효소분해는 표면침식의 메커니즘으로 진행하므로 이들의 분해거동은 표면특성을 개질로서 조절할 수 있다. 본 연구에서는 효소분해속도를 조절하기 위하여 플라즈마 기법을 PHAs 표면특성의 개질에 적용하였다. $CF_3H$와 $O_2$ 플라즈마를 사용하여 재료 표면에 각각 소수성 및 친수성을 부여하였다. 효소분해 실험은 pH 7.4의 0.1 M potassium phosphate 완충용액에서 Alcaligenes facalis T1에서 정제된 poly(hydroxybutyrate) 분해효소를 첨가하여 행하였다. $CF_3H$ 플라즈마 처리된 시편의 경우 표면 층의 불소화에 따른 소수성의 증가와 분해 효소에 대한 비활성으로 초기분해 속도가 상당히 지연됨을 관찰하였으나 $O_2$ 플라즈마 처리에 의한 표면 친수성은 분해속도의 촉진 등에 큰 영향을 미치지 않았다.

• Journal of Microbiology and Biotechnology
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• 제29권9호
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• pp.1401-1411
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• 2019

Mycobacterial cell walls comprise thick and diverse lipids and glycolipids that act as a permeability barrier to antibiotics or other chemical agents. The use of OH radicals from a non-thermal plasma jet (NTPJ) for the inactivation of mycobacteria in aqueous solution was adopted as a novel approach. Addition of water vapor in a nitrogen plasma jet generated OH radicals, which converted to hydrogen peroxide ($H_2O_2$) that inactivated non-pathogenic Mycobacterium smegmatis and pathogenic Mycobacterium tuberculosis H37Rv. A stable plasma plume was obtained from a nitrogen plasma jet with 1.91 W of power, killing Escherichia coli and mycobacteria effectively, whereas addition of catalase decreased the effects of the former. Mycobacteria were more resistant than E. coli to NTPJ treatment. Plasma treatment enhanced intracellular ROS production and upregulation of genes related to ROS stress responses (thiolrelated oxidoreductases, such as SseA and DoxX, and ferric uptake regulator furA). Morphological changes of M. smegmatis and M. tuberculosis H37Rv were observed after 5 min treatment with $N_2+H_2O$ plasma, but not of pre-incubated sample with catalase. This finding indicates that the bactericidal efficacy of NTPJ is related to the toxicity of OH and $H_2O_2$ radicals in cells. Therefore, our study suggests that NTPJ treatment may effectively control pulmonary infections caused by M. tuberculosis and nontuberculous mycobacteria (NTM) such as M. avium or M. abscessus in water.

• 상하수도학회지
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• 제34권1호
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• pp.75-83
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• 2020

This study investigated the degradation characteristics and biodegradability of phenol, refractory organic matters, by injecting MgO and CaO-known to be catalyst materials for the ozonation process-into a Dielectric Barrier Discharge (DBD) plasma. MgO and CaO were injected at 0, 0.5, 1.0, and 2 g/L, and the pH was not adjusted separately to examine the optimal injection amounts of MgO and CaO. When MgO and CaO were injected, the phenol decomposition rate was increased, and the reaction time was found to decrease by 2.1 to 2.6 times. In addition, during CaO injection, intermediate products combined with Ca²⁺ to cause precipitation, which increased the COD (chemical oxygen demand) removal rate by approximately 2.4 times. The biodegradability of plasma treated water increased with increase in the phenol decomposition rate and increased as the amount of the generated intermediate products increased. The biodegradability was the highest in the plasma reaction with MgO injection as compared to when the DBD plasma pH was adjusted. Thus, it was found that a DBD plasma can degrade non-biodegradable phenols and increase biodegradability.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.806-809
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• 2003

Ion-induced secondary electron emission coefficient $({\gamma})$. of the patterned MgO thin film with geometrical structures has been measured by ${\gamma}$ - FIB(focused ion beam) system. The patterned MgO thin film with geometrical structures has been formed by the mask (mesh of ${\sim}$ $10{\mu}m^{2})$ under electron beam evaporation method. It is found that the higher ${\gamma}$. has been achieved by the patterned MgO thin film than the normal ones without patterning.

• 한국결정성장학회지
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• 제11권5호
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• pp.231-237
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• 2001

Etch rates up to 120 nm/min for $Ta_{2}O_{5}$ were achieved in both $SF_{6}/Ar$ and $Cl_{2}/Ar$ discharges. The effect of ultraviolet (UV) light illumination during ICP etching on $Ta_{2}O_{5}$ etch rate in those plasma chemistries was examined and UV illumination was found to produce significant enhancements in $Ta_{2}O_{5}$ etch rates most likely due to photoassisted desorption of the etch products. The effects of ion flux, ion energy, and plasma composition on (Ba, Sr)$TiO_3$ etch rate were examined and maximum etch rate ~90 nm/min was achieved in $Cl_{2}/Ar$ ICP discharges while $CH_{4}/H_{2}/Ar$ chemistry produced extremely low etch rates (${\leq}10\;nm/min$) under all conditions.

• 환경위생공학
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• 제13권2호
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• pp.147-155
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• 1998

In this study, we prepared non-porous plasma membrane for having high permeability and selectivity and this membrane was deposited on the $Al_{2}O_{3}$ membrane by using $CHF_{3}$ & $SiH_{4}$ monomer. Also, we investigated for the permeation characteristics of the plasma polymer membrane by Ar plasma treatment. When the position of substrate was near cathode, the selectivity was increased with Ar plasma treatment time and rf-power. The pore size of $Al_{2}O_{3}$ membrane had an effect on the permeability and the position of substrate affected selectivity.

• 한국산학기술학회논문지
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• 제19권3호
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• pp.699-706
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• 2018

플라즈마 고분자의 영구기체(He, $H_2$, $O_2$, $N_2$, $CH_4$) 및 응축성 증기($CO_2$, $C_2H_4$, $C_3H_8$)에 대한 투과 특성을 조사하였다. 플라즈마 고분자는 마이크로파 방전과 라디오파 방전을 이용하여 제조하였으며 플라즈마 중합의 단량체(monomer)로는 hexamethyldisiloxane(HMDS)을 사용하였다. 마이크로파를 이용하여 제조한 HMDS 플라즈마 고분자막의 투과도계수는 투과 기체의 분자지름에 의존하는 경향을 나타내었으며 라디오파를 이용하여 제조한 플라즈마 고분자막보다 높은 산소/질소 투과선택도를 나타내었다. 반면에 라디오파를 이용하여 제조한 HMDS 플라즈마 고분자막의 투과도계수는 투과기체의 임계온도에 의존하는 경향을 나타내었으며 질소에 대한 에틸렌 및 프로판의 투과선택도가 우수한 특성을 나타내었다. 마이크로파로 중합시킨 고분자막은 가교결합도가 높기 때문에 기체의 투과도계수가 주로 확산계수(또는 분자지름)에 의존하게 된다. 그러나 라디오파의 에너지 밀도는 마이크로파의 에너지 밀도보다 낮기 때문에 라디오파로 중합시킨 플라즈마 고분자막의 구조는 마이크로파로 중합시킨 고분자 막에 비하여 가교결합도가 떨어지게 되며 이 막을 통한 투과도계수는 분자크기 보다는 기체의 임계온도에 의존하는 경향을 나타내었다. 따라서 라디오파를 이용하여 중합시킨 HMDS 플라즈마 고분자막은 영구기체 보다는 공기 중의 유기물질을 제거하는데 보다 효과적으로 이용될 수 있을 것으로 생각된다.

• 반도체디스플레이기술학회지
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• 제22권4호
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• pp.26-31
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• 2023

We investigated the impact of NF₃ / H₂O remote plasma dry cleaning conditions on the SiO₂ etching rate at different preparation states during the fabrication of ultra-large-scale integration (ULSI) devices. This included consideration of factors like Si crystal orientation prior to oxidation and three-dimensional structures. The dry cleaning process were carried out varying the parameters of pressure, NF₃ flow rate, and H₂O flow rate. We found that the pressure had an effective role in controlling anisotropic etching when a thin SiO₂ layer was situated between Si₃N₄ and Si layers in a multilayer trench structure. Based on these observations, we would like to provide further guidelines for implementing the dry cleaning process in the fabrication of semiconductor devices having 3D structures.

• 한국표면공학회지
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• 제41권2호
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• pp.43-47
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• 2008

Cubic boron nitride(c-BN) films were deposited on tungsten carbide insert tool by microwave plasma enhanced chemical vapor deposition(MPECVD) from a gas mixture of triethyl borate$(B(C_2H_5O)_3)$, ammonia $(NH_3)$, hydrogen$(H_2)$ and argon(Ar). The qualities of deposited thin film were investigated by x-ray diffrac-tion(XRD), field emission scanning electron microscopy(FE-SEM) and micro Raman spectroscope. The surface morphologies of the synthesised BN as well as crystallinity appear to be highly dependent on the flow rate of $B(C_2H_5O)_3$ and $(NH_3)$ gases. The deposited film had more crystallized phases with 5 scem of $B(C_2H_5O)_3$ and $(NH_3)$ gases than with 2 sccm, and the phase was identified as c-BN by micro Raman spectroscope and XRD. The adhesion strength were also increased with increasing flow rates of $B(C_2H_5O)_3$ and $(NH_3)$ gases.

• 한국진공학회지
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• 제19권4호
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• pp.275-280
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• 2010

MOCVD (Metal-Organic Chemical Vapor Deposition) 장비를 사용하여 BZO (boron doped zinc oxide, ZnO:B) 박막을 증착하고 수소 플라즈마 처리공정을 진행하였다. 본 연구는 수소 플라즈마 처리된 BZO 박막에 산소 플라즈마 재처리를 진행하여 BZO 박막의 특성 변화를 분석하였다. 그 결과 BZO 박막 성장은 (100), (101), (110)을 확인하였고, 산소 플라즈마 재처리에 의하여 일함수와 표면 저항이 증가하였다. 수소 플라즈마 처리만을 진행한 BZO 박막과 산소 플라즈마 재처리 공정을 진행한 BZO 박막의 300~1,100 nm에서 가중치 투과율은 86%로 변화하지 않았으며, 가중치 산란도는 12%에서 15%로 증가하였다.