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http://dx.doi.org/10.5757/JKVS.2010.19.4.275

Influence of O2-Plasma Treatment on the Thin Films of H2 Post-Treated BZO (ZnO:B)  

Yoo, H.J. (Department of Electrophysics, Kwangwoon University)
Son, C.G (Department of Electrophysics, Kwangwoon University)
Yoo, J.H. (Thin Film Solar Cell Team, Jusung Engineering Co. Ltd)
Park, C.K. (Thin Film Solar Cell Team, Jusung Engineering Co. Ltd)
Kim, J.S. (Thin Film Solar Cell Team, Jusung Engineering Co. Ltd)
Park, S.G. (Thin Film Solar Cell Team, Jusung Engineering Co. Ltd)
Kang, H.D. (Thin Film Solar Cell Team, Jusung Engineering Co. Ltd)
Choi, E.H. (Department of Electrophysics, Kwangwoon University)
Cho, G.S. (Department of Electrophysics, Kwangwoon University)
Kwon, G.C. (Department of Electrophysics, Kwangwoon University)
Publication Information
Journal of the Korean Vacuum Society / v.19, no.4, 2010 , pp. 275-280 More about this Journal
Abstract
The influence of $O_2$-plasma treatment on $H_2$ post-treated BZO (ZnO:B) thin film using MOCVD (Metal-Organic Chemical Vapor Deposition) are investigated. An $O_2$-plasma treatment of the $H_2$ post-treated BZO thin films resulted in XRD peak of (100), (101) and (110). Also, electrical properties resulted in an increase in sheet resistance and work function. The weighted optical transmittance and haze at 300~1,100 nm of BZO thin films with $O_2$-plasma treatment on the $H_2$ post-treatment show approximately 86% and 15%, respectively.
Keywords
Boron-zinc-oxide; Transparent conductive oxide (TCO); $O_2$-plasma treatment; Work function; Transmittance; Boron doped ZnO(BZO);
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