• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.59 no.9
• /
• pp.1621-1625
• /
• 2010

Recently, due to increase in the usage of toxic gas and inflammability gas, the ability to monitor and precisely measurement of these gases is crucial in preventing the occurrence of various accidents. CuO doped and undoped $WO_3$ thick films gas sensors were prepared using screen-printing method on alumina substrates. A structural properties of $WO_3$:CuO thick films had monoclinic phase and triclinic phase of $WO_3$ together. Sensitivity of $WO_3$:CuO sensor at 2000 ppm of $CO_2$ gas and 50 ppm of $H_2S$ gas was investigated. 4 wt% Cu doped $WO_3$ thick films had the highest sensitivity of $CO_2$ gas and $H_2S$ gas.

• Journal of the Korean Institute of Gas
• /
• v.2 no.4
• /
• pp.47-52
• /
• 1998

Water vapor absorption performance of four components solution ($LiBr+LiNO_3+LiC1+H_2O$) which could be substituted for commonly used $LiBr/H_2O$ solution in water cooled abosorption chiller is tested using a vertical tube absorber. Inlet solution concentration, inlet solution temperature, solution flow rate and inlet temperature of cooling water is varied as experimental parameters. The results of the experiment of water vapor absorption performance show that four components solution should have $2\%$ higher concentration for equal absorption capacity of $LiBr/H_2O$. But considering that four components solution have higher solubility than LiBr solution about $3\%$ high oncentration, four components solution ($LiBr+LiNO_3+LiC1+H_2O$) have more absorption capacity than LiBr solution in actual absorption chiller and can be applied to a small or air cooled absorption chiller.

• Korean Journal of Materials Research
• /
• v.14 no.12
• /
• pp.835-839
• /
• 2004

The diamond thin films was deposited on Si(100) substrate by Hot Filament Chemical Vapor Deposition (HFCVD) method using supplied the $CH_{3}OH/H_{2}O$ mixtured gas with excess H_{2} gas. The role of hydrogen ion as the growth mechanism of the diamond deposit was examined and compared the $CH_{3}OH/H_{2}O$ with the $CH_4/H_2$. Pressures in the range of $1.1\sim290{\times}10^2$ Pa were applied and using $3.4\sim4.4$ kw power. It was investigated by Scanning Electron Microscopy(SEM) and Raman spectroscopy The H ion was etching the graphite and restrained from $sp^3\;to\;sp^2$. But excess $H_2$ gas was not helped diamond deposit using $CH_{3}OH/H_{2}O$ mixtured gas. It was shown that the role of hydrogen ion of deposited diamond films using $CH_{3}OH/H_{2}O$ was different from $CH_4/H_2$.

• Journal of the Korean Ceramic Society
• /
• v.36 no.12
• /
• pp.1322-1326
• /
• 1999

In2O3 thick film gas sensor for detecting NOx gas of high concentration was fabricated by a screen printing technique. This work focussed on investigation of the change of sensitivity to NOx gas with firing temperatures of sensing layer and on improvement of the sensitivity by adding catalysts such as Al,. Ru, and SnO2 The cross sensitivites of sensor to CO, H2, CH4 and i-C4H10 gases were also examined under NO2 gas concentration of 200ppm Pure In2O3 gas sensor prepared at a firing temperature of 50$0^{\circ}C$ showed a maximum sensitivity to NOx gas at the operating temperature of 40$0^{\circ}C$ Al(0.004 wt%)-In2O3 sensor largely improved the sensitivities to both NO2 and NO gas and showed a superior selectivity compared with other gas sensors.

• Korean Journal of Materials Research
• /
• v.19 no.8
• /
• pp.427-431
• /
• 2009

ZnO wire-like thin films were synthesized through thermal oxidation of sputtered Zn metal films in dry air. Their nanostructure was confirmed by SEM, revealing a wire-like structure with a width of less than 100 nm and a length of several microns. The gas sensors using ZnO wire-like films were found to exhibit excellent $H_2$ gas sensing properties. In particular, the observed high sensitivity and fast response to $H_2$ gas at a comparatively low temperature of $200^{\circ}C$ would lead to a reduction in the optimal operating temperature of ZnO-based $H_2$ gas sensors. These features, together with the simple synthesis process, demonstrate that ZnO wire-like films are promising for fabrication of low-cost and high-performance $H_2$ gas sensors operable at low temperatures. The relationship between the sensor sensitivity and $H_2$ gas concentration suggests that the adsorbed oxygen species at the surface is $O^-$.

• Journal of the Korean Institute of Gas
• /
• v.20 no.6
• /
• pp.95-101
• /
• 2016

For a natural gas steam reforming, comparative studies of the performance in a conventional packed-bed reactor and a membrane reactor, a new conceptual reactor consisting of a reactor with series of hydrogen separation membranes, have been performed. Based on experimental kinetics reported by Xu and Froment, a process simulation model was developed with Aspen $HYSYS^{(R)}$, a commercial process simulator, and effects of various operating conditions like temperature, $H_2$ permeance, and Ar sweep gas flow rate on the performance in a membrane reactor were investigated in terms of reactant conversion and $H_2$ yield enhancement showing improved $H_2$ yield and methane conversion in a membrane reactor. In addition, a preliminary cost estimation focusing on natural gas consumption to supply heat required for the system was carried out and feasibility of possible cost savings in a membrane reactor was assessed with a cost saving of 10.94% in a membrane reactor.

• Journal of Hydrogen and New Energy
• /
• v.27 no.6
• /
• pp.670-676
• /
• 2016

Hydrogen town in Republic of Korea was established in 2013. Hydrogen as a byproduct produced by various processes of factories is used in hydrogen town facilities. As cell performance is affected by contaminations in fuel gas, various standards about impurities of fuel have been determined by many countries. This study shows performance degradation of single cell with impurities concentrations. Traces of carbon monoxide (CO) and hydrogen sulfide ($H_2S$)can cause considerable cell performance losses. For comparing the performances by poisoning of CO, acceleration test, I-V curve, constant current are performed. Both the CO and $H_2S$ poisoning rate are a function of their concentration. With the higher concentrations the higher poisoning rates are observed. And, it was confirmed that, oxidation behavior and side reaction generation are not affected. Under the lower $H_2S$ concentration condition, the poisoning rate is much higher than that of CO because of its different adsorption intensity. It can be possible that the result of this study can be used for enacting regulation as a baseline data.

• Proceedings of the KSME Conference
• /
• 2003.11a
• /
• pp.284-289
• /
• 2003

The narrow band-averaged transmissivity of $CO_2-H_2O$ mixtures is expressed by multiplying the transmissivities of $CO_2$ and $H_2O$. Applying the multiplication property of narrow band transmissivities for gas mixtures of $CO_2-H_2O$, the number of gray gases, required for accurate representation of the absorption characteristics by using the narrow band based WSGGM, is significantly increased. To reduce the computational loads by reducing the number of gray gases, we propose a gray gas regrouping process where the gray gases used for the WSGGM are regrouped into a specified number of groups according to the magnitudes of absorption coefficients. To evaluate the proposed WSGGM for gas mixtures, the radiative transfer problems through three-dimensional gas media are considered. The radiative source terms and the radiative heat fluxes obtained by using the proposed method are fairly well compared to those obtained by using the SNB model. The regrouping technique results in an excellent computational efficiency with minor loss of accuracy.

• Journal of Surface Science and Engineering
• /
• v.32 no.3
• /
• pp.303-306
• /
• 1999

On the effect of substrate bias at first stage of diamond synthesis at lower substrate temperature(approximately 673K) using microwave plasma CVD and effect of reaction gas system for the bias enhanced nucleation were studied. The reaction gas was mixture of methane and hydrogen or carbon monoxide and hydrogen. The nucleation density of applied bias -150V using $CH_4-H_2$ reaction gas system, significantly higher than that of $C-H_2$ reaction gas system. When the $CH_4-H_2$ reaction was used, nucleation density was increased because of existence of SiC as a interface for diamond nucleation. By use of this negative bias effect for fabrication of CVD diamond film using two-step diamond growth without pre-treatment, fabrication of the diamond film consist of diamond grains $0.2\mu\textrm{m}$ in diameter was demonstrated

• Transactions on Electrical and Electronic Materials
• /
• v.5 no.5
• /
• pp.189-193
• /
• 2004

Pure and Sn or Pt doped $\alpha-Fe_2O_3$ thin films were prepared on $Al_2O_3$ substrates by RF-magnetron sputtering method and the sensitivities were compared. It was found that pure $\alpha-Fe_2O_3$ thin films did not exhibit much selectivity in CO and $i-C_4H_{10}$ gases while it showed the high sensitivity in proportion to the gas concentration of $C_2H_{5}OH$ gas. Pt-doped $\alpha-Fe_2O_3$ showed to be alike sensing properties as pure $\alpha-Fe_2O_3$ thin film in $C_2H_{5}OH$ gas. However, Sn-doped $\alpha-Fe_2O_3$ thin films exhibited the excellent sensitivity and selectivity in Hz gas. After microstructure modification by plasma etching on pure $\alpha-Fe_2O_3$ thin films, the gas sensing characteristics were dramatically changed.