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http://dx.doi.org/10.4313/TEEM.2004.5.5.189

The Doping and Plasma Effects on Gas Sensing Properties of α-Fe2O3 Thin Film  

Choi, J.Y. (Department of Materials Engineering, Chungbuk National University)
Jang, G.E. (Department of Materials Engineering, Chungbuk National University)
Publication Information
Transactions on Electrical and Electronic Materials / v.5, no.5, 2004 , pp. 189-193 More about this Journal
Abstract
Pure and Sn or Pt doped $\alpha-Fe_2O_3$ thin films were prepared on $Al_2O_3$ substrates by RF-magnetron sputtering method and the sensitivities were compared. It was found that pure $\alpha-Fe_2O_3$ thin films did not exhibit much selectivity in CO and $i-C_4H_{10}$ gases while it showed the high sensitivity in proportion to the gas concentration of $C_2H_{5}OH$ gas. Pt-doped $\alpha-Fe_2O_3$ showed to be alike sensing properties as pure $\alpha-Fe_2O_3$ thin film in $C_2H_{5}OH$ gas. However, Sn-doped $\alpha-Fe_2O_3$ thin films exhibited the excellent sensitivity and selectivity in Hz gas. After microstructure modification by plasma etching on pure $\alpha-Fe_2O_3$ thin films, the gas sensing characteristics were dramatically changed.
Keywords
${\alpha}-Fe_2O_3$ thin film; Sensitivity; Selectivity; Plasma etching;
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