Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Doping and Plasma Effects on Gas Sensing Properties of α-Fe2O3 Thin Film

  • Choi, J.Y. (Department of Materials Engineering, Chungbuk National University) ;
  • Jang, G.E. (Department of Materials Engineering, Chungbuk National University)
  • Published : 2004.10.01
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Abstract

Pure and Sn or Pt doped $\alpha-Fe_2O_3$ thin films were prepared on $Al_2O_3$ substrates by RF-magnetron sputtering method and the sensitivities were compared. It was found that pure $\alpha-Fe_2O_3$ thin films did not exhibit much selectivity in CO and $i-C_4H_{10}$ gases while it showed the high sensitivity in proportion to the gas concentration of $C_2H_{5}OH$ gas. Pt-doped $\alpha-Fe_2O_3$ showed to be alike sensing properties as pure $\alpha-Fe_2O_3$ thin film in $C_2H_{5}OH$ gas. However, Sn-doped $\alpha-Fe_2O_3$ thin films exhibited the excellent sensitivity and selectivity in Hz gas. After microstructure modification by plasma etching on pure $\alpha-Fe_2O_3$ thin films, the gas sensing characteristics were dramatically changed.

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References

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