• 제목/요약/키워드: $H_2$ gas

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가스정압관리소 기반의 복합에너지허브 기본설계 (A Basic Design of Multi Energy Hub Based on Natural Gas Governor Station)

  • 박소진;김형태;김진욱;강일오;유현석;최경식
    • 한국수소및신에너지학회논문집
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    • 제31권5호
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    • pp.405-410
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    • 2020
  • In this literature, we are introduce a basic design of multi energy hub based on natural gas governor station. Multi energy hub consists of turbo expender generator, phosphoric acid fuel cell, pressure swing adsorption, H2 charging station, utilities and etc. We design a hybrid energy hub system that provides energy using these complex energies, and calculates the amount of electricity that can be produced and the amount of hydrogen charged through the process analysis. TEG and phosphoric acid fuel cell produce 2,290 to 2,380 kW and can supply electricity to 500 houses. In addition, By-product H2 gas is refined to H2 vehicle fuel. This will help maximize the balance of energy demand and supply and improve national energy efficiency by integrating unused decompression energy power generation technology and various power generation/heat source technologies.

SM45C 탄소강의 플라즈마 침류질화 처리 시 $H_2S$, $C_3H_8$ 가스 첨가에 따른 미세조직 및 마찰계수의 변화 (Micro Structure and the Coefficient of Friction with $H_2S$ and $C_3H_8$ Gas Addition During Plasma Sulf-nitriding of SM45C Carbon Steel)

  • 고영기;문경일;이원범;김성완;유용주
    • 열처리공학회지
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    • 제20권5호
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    • pp.237-242
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    • 2007
  • Friction coefficient of SM45C steel was surprisingly reduced with $H_2S$ and $C_3H_8$ gas during plasma sulf-nitriding. During the plasma sulf-nitriding, 100-700 sccm of $H_2S$ gas and 100 sccm of $C_3H_8$ gas were added and working pressure and temperature were 2 torr, $500-550^{\circ}C$, respectively. As $H_2S$ gas amount increased over 500 sccm, flake-like structures were developed on top of the nitriding layer and grain size of the nitriding layer were about 100 nm. The friction coefficient for the sample treated plasma sulf-nitriding under $N_2-H_2S$ gas was 0.4 - 0.5. The structure became more finer and amorphous-like along with $N_2-H_2S-C_3H_8$ gas and the nano-sized surface microstructures resulted in high hardness and significantly low friction coefficient of 0.2.

회분식 유동층반응기에서 세 종류 아연계 탈황제의 석탄가스 환원도, 수분함량, 황화수소함량에 따른 반응성 평가 (Analysis of Reactivity of Zn-Based Desulfurization Sorbents for Reducing Power, Water Vapor Content and H2S Content of the Coal Gas in a Batch-Type Fluidized-Bed Reactor)

  • 박영철;조성호;손재익;이창근
    • Korean Chemical Engineering Research
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    • 제47권6호
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    • pp.710-714
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    • 2009
  • 본 연구에서는 석탄가스의 환원도와 석탄가스에 함유된 $H_2O/H_2S$ 농도변화에 따른 세 가지 종류의 아연계 탈황제의 반응성능을 회분식 유동층반응기에서 분석하였다. 가스화에서 생성되는 가스의 조성은 환원도가 각각 다른 KRW(Kellogg-Rust-Westinghouse) 공기이용 가스 조성, Shell 산소이용 가스 조성, 고등기술연구원의 가스 조성을 기준으로 모사가스를 이용하여 입구의 $H_2O$$H_2S$ 농도를 변화시켜 실험을 수행하였다. $H_2O$의 농도는 5부터 30%까지 $H_2S$의 농도는 0.5에서 2%로 변화시켜 탈황성능을 분석하였다. 실험 결과 $H_2O$의 농도가 증가할수록 탈황성능이 감소하고 입구의 $H_2S$ 농도가 증가할수록 탈황반응기 후단의 $H_2S$ 농도 역시 증가하였다. 모든 조건에서 환원도에 따른 탈황성능 변화는 없었으며 탈황성능은 최저 99.5%로 건식탈황제를 이용하여 99% 이상의 $H_2S$ 제거 성능을 보이는 것을 확인하였다.

$H_{2}/N_{2}$ 혼합가스 혼합가스 소결분위기 변화가 사출성형한 Fe-Ni 혼합분말의 탄소량과 기계적 성질에 미치는 영향 (Effect of $H_{2}/N_{2}$ Sintering Atmosphere on the Carbon Content and Mechanical Properties in the Metal Injection Molding of Fe-Ni Mixed Powder)

  • 구광덕
    • 한국분말재료학회지
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    • 제3권1호
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    • pp.49-56
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    • 1996
  • The effect of$H_{2}/N_{2}$gas sintering atmosphere on the carbon content and mechanical properties during the metal injection molding process of carbonyl iron-nickel powder was studied. The carbon content of the specimen after debinding in the pure$N_{2}$atmosphere appeared 0.78 wt%. After showing the maximum value of 1.48 wt.% in the debinding atmosphere of 10%$H_{2}/N_{2}$gas mixture, the carbon content of the debinded specimen decreased gradually with increasing the$H_2$content in the$H_{2}/N_{2}$gas mixture. The carbon contents of the sintered specimen were 0.46~0.63wt% in Na gas atmosphere, while they appeared extremely low above 40%$H_{2}/N_{2}$gas atmosphere. The relative sintered density increased abruptly from 88~90% to 93~96% with the addition of Ni, while the density nearly unchanged above 2% Ni addition. The sintered density increased with increasing the fraction of$H_{2} in H_{2}/N_{2}$gas mixture. Tensile strength and hardness increased, and elongation decreased with increasing carbon and Ni content. In spite of high carbon content of 0.63 wt%, the superior elongation value of 10% was shown.

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Effect of Noble Metals on Hydrogen Sensing Properties of Metal Oxide-based Gas Sensors

  • Mirzaei, Ali;Bang, Jae Hoon;Kim, Sang Sub;Kim, Hyoun Woo
    • 센서학회지
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    • 제29권6호
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    • pp.365-368
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    • 2020
  • As a green and abundant source of energy, H2 has attracted the attention of researchers for use in different applications. Nevertheless, it is highly flammable, and because of its significantly small size, extreme attention is needed to detect its leakage. In this review, we discuss different effects of noble metals on the H2 gas response and performance of metal oxide-based gas sensors. In this regard, we discuss the effects of noble metals, in combination with metal oxides, on H2 gas detection. The catalytic activity towards H2 gas and the formation of heterojunctions with metal oxides are the main contributions of noble metals to the sensing improvement of H2 gas sensors. Furthermore, in the special case of Pd and somewhat Pt, the formation of PdHx and PtHx also affects the H2 sensing performance. This review paper provides useful information for researchers working in the field of H2 gas detection.

Si와 GaAs기판 위에 AIN 박막의 전기적 특성 (Properties Electric of AIN Thin Film on the Si and GaAs Substrate)

  • 박정철;추순남;권정렬;이헌용
    • 한국전기전자재료학회논문지
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    • 제21권1호
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    • pp.5-11
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    • 2008
  • To study the effects of $H_2$ gas on AIN insulation thin film, we prepared AIN thin film on Si and GaAs substrate by means of reactive sputtering method using $H_2$ gas as an additives, With treatment conditions of $H_2$ gas AIN thin film shows variable electrical properties such as its crystallization and hysterisis affected to electrical property, As a results, AIN thin film fabricated on Si substrate post-treated with $H_2$ gas for 20 minutes shows much better an insulation property than that of pre-treated, And AIN film treated with $H_2$ gas comparing to non-treated AIN film shows a flat band voltage decreasment. But In GaAs substrate $H_2$ gas does not effect on the flat band voltage.

초음파분해반응에 있어서 희가스의 영향 (Effects of Noble Gas on the Sonolytic Decomposition)

  • 임봉빈;김선태
    • 한국환경과학회지
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    • 제11권7호
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    • pp.749-755
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    • 2002
  • The effects of noble gas (such as helium, neon, argon, krypton, and xenon) on the sonolytic decomposition of water and 2-methyl-2-propanol(t-butanol) with 200 KHz high power ultrasound were investigated. The physical properties of the noble gas have an effect on the formation rate of products $(H_2O_2,\;H_2,\;O_2)$ and the decomposition rate on the sonolytic decomposition of water. The pyrolysis products, such as methane, ethane, ethylene, and acetylene are formed during the sonolytic decomposition of t-butanol. From the estimation of the ratio $[C_2H_4+C_2H_2] / [C_2H_6]$, the cavitation temperature would be varied by the used noble gas. In all cases for the sonolytic decomposition of water, t-butanol, and diethyl phthalate, the decomposition rates were xenon > krypton > argon > neon > helium with a significant difference and were closely correlated with the formation rate of OH radical and high temperature inside the cavitation bubble under each noble gas.

냉음극을 이용한 plasma전자 beam의 전기적 입력특성 I (A Study on Electric Characteristics of Plasma Electon Beam Produced by Cold Cathode.)

  • 전춘생;박용관
    • 전기의세계
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    • 제27권3호
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    • pp.36-42
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    • 1978
  • It has been investigates that electric characteristics of plasma electron beam in N$_{2}$, H$_{2}$ and Ar gas jars under various gas pressures during electron beams are formed. The results are as follows: 1)Electron beam is formed in the region of positive resistance on the characteristic curve. This phenomenon is identical in N$_{2}$, H$_{2}$ and Ar gases. 2)But in Ar gas, electron beam is formed at relatively lower gas pressure than in H$_{2}$ and N$_{2}$. 3)In pure gas either N$_{2}$, H$_{2}$ and N$_{2}$ the lower the gas pressure, the higher the voltage drop for the same electron beam current. 4)The region in which electron beam is formed is limited at a given pressure. 5)Beyond the limit mentioned above, it becomes glow discharge state and the current increases radically. 6)At a given gas pressure, electron beam voltage, that is, electrical power input increases with gap length.

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The relationship of dense molecular gas and HI/H2 gas in a MALATANG galaxy, NGC 6946

  • Poojon, Panomporn;Chung, Aeree;Lee, Bumhyun;Oh, Se-Heon;Tan, Qing-Hua;Gao, Yu;Sengupta, Chandreyee
    • 천문학회보
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    • 제44권1호
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    • pp.76.3-76.3
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    • 2019
  • We present the results from our comparisons of HCN and HCO+ (J=4-3) with HI and $H_2$ gas in NGC 6946, a sample from a mapping study of the dense molecular gas in the strongest star-forming galaxies (MALATANG). The MALATANG is one of the JCMT legacy surveys on the nearest 23 IR-brightest galaxies beyond the Local Group, which aims to study the relations of dense molecular gas with more general cool gas such as atomic and molecular hydrogen gas, and star formation properties in active galaxies. In this work, we particularly focus on the comparisons between the JCMT HCN/HCO+ (J=4-3) data and the THINGS HI/the NRO CO (J=1-0) data. We probe the dense molecular gas mass as a function of HI and $H_2$ mass in different locations in the central ${\sim}1.5kpc^2$ region. We discuss how the excess/deficit of $HI/H_2$ or total cool gas ($HI+H_2$) mass controls the presence and/or the fraction of dense molecular gas.

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플라즈마 강화 원자층 증착법에 의한 TaNx 박막의 전기 전도도 조절 (Electrical Conductivity Modulation in TaNx Films Grown by Plasma Enhanced Atomic Layer Deposition)

  • 류성연;최병준
    • 한국재료학회지
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    • 제28권4호
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    • pp.241-246
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    • 2018
  • $TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.