• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.11-15
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• 2000

This paper presents a process optimization of antireflection (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a double-layer AR(DLAR) coating of MgFe$_2$/GeO$_2$. We investigated GeO$_2$ films as an AR layer because they have a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown GeO$_2$ film showed deposition temperature strong dependence. The GeO$_2$ at 400$\^{C}$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgFe$_2$film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04% in the wavelengths ranged from 0.4 ㎛ to 1.1 ㎛. Solar cells with a structure of MgFe$_2$/GeO$_2$/Ag/N$\^$+//p-type Si/P$\^$+//Al were investigated with the without DLAR coatings. We achieved the efficiency of solar cells greater than 15% with 3.12% improvement with DLAR coatings. Further details about MgFe$_2$,GeO$_2$ films, and cell fabrication parameters are presented in this paper.

• Korean Journal of Soil Science and Fertilizer
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• v.44 no.3
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• pp.465-472
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• 2011

To investigate the effect of inorganic ($GeO_2$) and organic (Ge-132) germanium treatment on Brasica juncea C. plant, growth characteristics and Ge contents were examined with various inorganic or organic germanium treatments (0, 5, 10, 25, 50, 75 and $100mg\;L^{-1}$), respectively. Brasica juncea C. growth did not much inhibited until Ge $10mg\;L^{-1}$ concentration under both Ge-132 and $GeO_2$ treatments as compared to control. On the other hand, at Ge concentration higher than $25mg\;L^{-1}$ concentration, Brasica juncea C. growth was inhibited under both Ge-132 and $GeO_2$ treatments. Under treatment of $GeO_2$, length of root and shoot slightly increased until $5mg\;L^{-1}$ concentration and dry weight slightly increased until $10mg\;L^{-1}$ concentration. Under treatment of Ge-132, length of root and shoot slightly increased until $10mg\;L^{-1}$ concentration and dry weight slightly increased until $25mg\;L^{-1}$ concentration. Total Ge contents in Brasica juncea C. early seedlings with $GeO_2$ treatment were a bit higher than those with Ge-132 treatment. Germanium was primarily accumulated in the roots (77%) with organic Ge (Ge-132) treatments, whereas Ge was primarily accumulated in the leaf (70%, respectively) with $GeO_2$ treatments. The Ge uptake rates in inorganic Ge treatments were slightly high than those in organic Ge treatments. Under inorganic Ge treatment with $2.5mg\;L^{-1}$, about 3% of Ge was accumulated into plant and distribution in leaf and root was 84.8% and 15.2%, respectively. Under organic Ge treatment with $2.5mg\;L^{-1}$, about 2.6% of Ge was accumulated into plant and distribution in leaf and root was 66.4% and 33.6%, respectively.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.589-593
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• 2003

Silica based Planar Lightwave Circuits (PLC) have been applied to various kinds of wave-guided optical passive devices. SiO$_2$ (buffer) and GeO$_2$-SiO$_2$ (core) thick films have been deposited by Flame Hydrolysis Deposition (FHD). The SiO$_2$ films were produced by the flame hydrolysis reaction of halide materials such as SiCl$_4$, POCl$_3$ and BCl$_3$ into an oxy-hydrogen torch. The P concentration increased from 2.0 to 2.8 at％ on increasing the POCl$_3$/BCl$_3$ flow ratio. The refractive index increased from 1.4584 to 1.4605 on increasing the POC1$_3$/BC1$_3$ flow ratio from 0.6 to 2.6. The refractive index of GeO$_2$-SiO$_2$ films was controlled by the GeCl$_4$ flow rate. The refractive index increased from 1.4615 to 1.4809 on increasing the GeCl$_4$ flow rate from 30 to 120 sccm.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.71-76
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• 1995

The thermal oxidation of Ge$_{0.2}$Si$_{0.8}$ in wet ambient has been investigated by Rutherford Backscattering Spectrometry(RBS). A uniform Ge$_{0.2}$Si$_{0.8}$O$_{2}$ oxide is formed at temperatures below 650.deg. C for polycrystalline and below 700.deg. C for single crystalline substrates. At higher temperatures Ge becomes depleted from the oxide and finally SiO$_{2}$ oxide is formed with Ge piled-ub behind it. The transition between the different oxide types depends also on the crystallinity of Ge$_{0.2}$Si$_{0.8}$. When a uniform Ge$_{0.2}$Si$_{0}$8/O$_{2}$ oxide grows, its thickness is proportional to the square root of the oxidation time, which suggests that the rate noting process is the diffusive transport of oxidant across the oxide. It is believed the oxidation is controlled by the competition between the diffusion of Ge or Si in Ge$_{0.2}$Si$_{0.8}$ and the movement of oxidation front.t.oxidation front.t.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.449-452
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• 1998

We have studied the oxidatio nrte of $Si_{1-x}Ge_{x}$ epitaxial layer grown by MBE(molecular beam epitaxy). Oxidation were performed at 700.deg. C, 800.deg. C, 900.deg. C, and 1000.deg. C. After the oxidation, the results of AES(auger electron spectroscopy) showed that Ge was completely rejected out of the oxide and pile up at $SiO_{2}/$Si_{1-x}Ge_{x}$ interface. It is shown that the presence of Ge at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface changes the dry oxidation rate. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700.deg. C and 800.deg.C, while it was decreased at both 900.deg. C and 1000.deg.C as the Ge mole fraction was increased. The ry oxidation rates were reduced for heavy Ge concentration, and large oxidation time. In the parabolic growth region of $Si_{1-x}Ge_{x}$ oxidation, The parabolic rate constant are decreased due to the presence of Ge-rich layer. After the longer oxidation at the 1000.deg.C, AES showed that Ge peak distribution at the $SiO_{2}$/$Si_{1-x}Ge_{x}$ interface reduced by interdiffusion of silicon and germanium.

• Journal of Radiation Industry
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• v.10 no.4
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• pp.189-192
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• 2016

$^{68}Ga$ has emerged as a promising candidate for non-invasive diagnostic imaging within Positron Emission Tomography (PET) because of its advantageous radiochemical characteristics ($t_{1/2}=68min$, ${\beta}^+$ yield ~89%). $^{68}Ga$ forms a stable chelation with various ligands and it is possible to be quickly and easily study using a $^{68}Ge/^{68}Ga$ generator. Commercial $^{68}Ge/^{68}Ga$ generators are chromatographic system using the inorganic materials such as alumina and tin dioxide which are employed as column matrixes for $^{68}Ge$. In this study, we tried out to make $^{68}Ge/^{68}Ga$ generator system with the $^{68}GeO_2$ microstructures for column matrix. $^{68}Ge$ tends to have stable bond with oxide as $^{68}GeO_2$ microstructures. The $^{68}GeO_2$ has been synthesized by hydrolysis of $GeCl_4$ (sol-gel method) and characterized by X-ray diffraction and scanning electron microscope for geometrical analysis. The stability of $GeO_2$ was tested using eluents with diverse solvents(water, ethanol and 0.1 N HCl). The radioactivity of $^{68}Ga^{3+}$ in eluate through $GeO_2$ was measured to prove a function as column material for a generator.

• Journal of the Korean Electrochemical Society
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• v.18 no.4
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• pp.161-171
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• 2015

High-yield zinc germanium oxide ($Zn_2GeO_4$) and zinc tin oxide ($Zn_2SnO_4$) nanowires were synthesized using a hydrothermal method. We investigated the electrochemical properties of these $Zn_2GeO_4$ and $Zn_2SnO_4$ nanowires as anode materials of lithium ion battery and sodium ion battery. The $Zn_2GeO_4$ and $Zn_2SnO_4$ nanowires showed excellent cycling performance of the lithium ion battery, with a maximum capacity of 1021 mAh/g and 692 mAh/g after 50 cycles, respectively, with a high Coulomb efficiency of 98 %. For the first time, we examined the cycling performance of $Zn_2GeO_4$ and $Zn_2SnO_4$ nanowires for sodium ion batteries. The maximum capacity is 168 mAh/g and 200 mAh/g after 50 cycles, respectively, with a high Coulomb efficiency of 97%. These nanowires are expected as promising electrode materials for the development of high-performance lithium ion batteries as well as sodium ion batteries.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.143.1-143.1
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• 2016

Ge is a promising candidate to replace Si in MOSFET because of its superior carrier mobility, particular that of the hole. However Ge oxide is thermodynamically unstable. At elevated temperature, GeO is formed at the interface of Ge and GeO2, and its formation increases the interface defect density, degrading its device performance. In search for a method to surmount the problem, we investigated Ge oxidation through an inert capped oxide layer. For this work, we prepared low doped n-type Ge(100) wafer by removing native oxide and depositing a capping layer, and show that GeO2 interface can be successfully grown through the capping layer by thermal oxidation in a furnace. The thickness and quality of thus grown GeO2 interface was examined by ellipsometry, XPS, and AFM, along with I-V and C-V measurements performed at 100K to 300K. We will present the result of our investigation, and provide the discussion on the oxide growth rate, interface state density and electrical characteristics in comparison with other studies using the direct oxidation method.

• Journal of the Korean GEO-environmental Society
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• v.15 no.1
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• pp.63-68
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• 2014

In this study, it was found that determined the photocatalytic degradation of antibiotics (lincomycin, LM) with various catalyst composite of titanium dioxide ($TiO_2$), hydroxyapatite (HAP) and germanium (Ge) under UV-A irradiation. At first, various type of complex catalysts were investigated to compare the enhanced photocatalytic potential. It was observed that in order to obtain the removal efficiencies were $TiO_2/HAP/Ge$ > $TiO_2/Ge$ > $TiO_2/HAP$. The composition of $TiO_2/HAP/Ge$ using a statistical approach based on mixture analysis design, one of response surface method was investigated. The independent variables of $TiO_2$ ($X_1$), HAP ($X_2$) and Ge ($X_3$) which consisted of 6 condition in each variables was set up to determine the effects on LM ($Y_1$) and TOC ($Y_2$) degradation. Regression analysis on analysis of variance (ANOVA) showed significant p-value (p < 0.05) and high coefficients for determination value ($R^2$ of $Y_1=99.28%$ and $R^2$ of $Y_2=98.91%$). Contour plot and response curve showed that the effects of $TiO_2/HAP/Ge$ composition for LM degradation under UV-A irradiation. And the estimated optimal composition for TOC removal ($Y_2$) were $X_1=0.6913$, $X_2=0.2313$ and $X_3=0.0756$ by coded value. By comparison with actual applications, the experimental results were found to be in good agreement with the model's predictions, with mean results for LM and TOC removal of 99.2% and 49.3%, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.699-705
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• 2008

Capacitance versus voltage (C-V) characteristics of Ge-nanocrystal (NC)-embedded metal-oxide-semiconductor (MOS) capacitors with $HfO_2$ gate material were investigated in this work. The current versus voltage (I-V) curves obtained from Ge-NC-embedded MOS capacitors fabricated with the $NH_3$ annealed $HfO_2$ gate material reveal the reduction of leakage current, compared with those of MOS capacitors fabricated with the $O_2$ annealed $HfO_2$ gate material. The C-V curves of the Ge-NC-embedded MOS capacitor with $HfO_2$ gate material annealed in $NH_3$ ambient exhibit counterclockwise hysteresis loop of about 3.45 V memory window when bias voltage was varied from -10 to + 10 V. The observed hysteresis loop indicates the presence of charge storages in the Ge NCs caused by the Fowler-Nordheim (F-N) tunneling. In addition, capacitance versus time characteristics of Ge-NC-embedded MOS capacitors with $HfO_2$ gate material were analyzed to investigate their retention property.