• Journal of IKEEE
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• v.26 no.4
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• pp.722-727
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• 2022

In this paper, we present the design and characterization of a power amplifier (PA) monolithic microwave integrated circuit (MMIC) in the X-band. The device is designed using a 0.25 ㎛ gate length AlGaN/GaN high electron mobility transistor (HEMT) on SiC process. The developed X-band AlGaN/GaN power amplifier MMIC achieves small signal gain of over 21.6 dB and output power more than 46.11 dBm (40.83 W) in the entire band of 9 GHz to 10 GHz. Its power added efficiency (PAE) is 43.09% ~ 44.47% and the chip dimensions are 3.6 mm × 4.3 mm. The generated output power density is 2.69 W/mm². It seems that the developed AlGaN/GaN power amplifier MMIC could be applicable to various X-band radar systems operating X-band.

• Journal of the Korean Mathematical Society
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• v.32 no.1
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• pp.141-149
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• 1995

Let N denote the set of positive integers. Fix $d_1, d_2 \in N with d = d_1 + d_2$. Let X and Y be real random variables and let ${X_i : i \in N^d_1} and {Y_j : j \in N^d_2}$ be independent families of independent identically distributed random variables with $L(X) = L(X_i) and L(Y) = L(Y_j)$, where $L(\cdot)$ denote the law of $\cdot$.

• The Pure and Applied Mathematics
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• v.20 no.4
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• pp.243-249
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• 2013

Let A be an algebra and D a derivation of A. Then D is called algebraic nil if for any $x{\in}A$ there is a positive integer n = n(x) such that $D^{n(x)}(P(x))=0$, for all $P{\in}\mathbb{C}[X]$ (by convention $D^{n(x)}({\alpha})=0$, for all ${\alpha}{\in}\mathbb{C}$). In this paper, we show that any algebraic nil derivation (possibly unbounded) on a commutative complex algebra A maps into N(A), where N(A) denotes the set of all nilpotent elements of A. As an application, we deduce that any nilpotent derivation on a commutative complex algebra A maps into N(A), Finally, we deduce two noncommutative versions of algebraic nil derivations inclusion range.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.9 no.1
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• pp.79-90
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• 2005

In this paper we study the numerical solutions of the stochastic differential equations of the form $$du(x,\;t)=f(x,\;t,\;u)dt\;+\;g(x,\;t,\;u)dW(t)\;+\;\sum\limits_{|q|\leq2m}\;A_q(x,\;t)D^qu(x,\;t)dt$$ where $0\;{\leq}\;t\;{\leq}\;T,\;x\;{\in}\;R^{\nu}$, ($R^{nu}$ is the $\nu$-dimensional Euclidean space). Here $u\;{\in}\;R^n$, W(t) is an n-dimensional Brownian motion, $$f\;:\;R^{n+\nu+1}\;{\rightarrow}\;R^n,\;g\;:\;R^{n+\nu+1}\;{\rightarrow}\;R^{n{\times}n},$$, and $$A_q\;:\;R^{\nu}\;{\times}\;[0,\;T]\;{\rightarrow}\;R^{n{\times}n}$$ where ($A_q,\;|\;q\;|{\leq}\;2m$) is a family of square matrices whose elements are sufficiently smooth functions on $R^{\nu}\;{\times}\;[0,\;T]\;and\;D^q\;=\;D^{q_1}_1_{\ldots}_{\ldots}D^{q_{\nu}}_{\nu},\;D_i\;=\;{\frac{\partial}{\partial_{x_i}}}$.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.15-23
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• 1998

Single crystalline I $n_{x}$G $a_{1-x}$ N thin film was grwon by MOCVD on (001) sapphire substrate for the blue light emitting devices. A good quality of I $n_{0.13}$G $a_{0.87}$N/GaN heterostructure grwon above 700.deg. C was confiremed by various characterization techniques of AFM, RHEED and DC-XRD. Through PL measurement at room temperautre for the Si-Zn co-doped I $n_{x}$G $a_{a-x}$N/GaN structure grwon at 800.deg. C to obtain blue wavelength emission, 460-470 nm and 425 nm emission peak were observed, which are believed to be from donor-to-acceptor pair transition and band edge emission of In/x/G $a_{1-x}$ N, respectively. The result of PL measurement of the undoped MQW I $n_{x}$G $a_{1-x}$ N layer at low temperature confirmed that the strong MQW peak was resulted by exciton from the GAN barrier and carrier of DA pair confined into the well layer.ll layer.yer.r.

• Bulletin of the Korean Mathematical Society
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• v.46 no.5
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• pp.857-866
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• 2009

Let n be a fixed positive integer, R be a 2n!-torsion free prime ring and $\mu$, $\nu$ be a pair of generalized derivations on R. If < $\mu^2(x)+\nu(x),\;x^n$ > = 0 for all x $\in$ R, then $\mu$ and $\nu$ are either left multipliers or right multipliers. Let n be a fixed positive integer, R be a noncommutative 2n!-torsion free prime ring with the center $C_R$ and d, g be a pair of derivations on R. If < $d^2(x)+g(x)$, $x^n$ > $\in$ $C_R$ for all x $\in$ R, then d = g = 0. Then we apply these purely algebraic techniques to obtain several range inclusion results of pair of (generalized-)derivations on a Banach algebra.

• Journal of the Chungcheong Mathematical Society
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• v.20 no.4
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• pp.411-418
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• 2007

Let $X_1$, ${\cdots}$, $X_n$ be nondegenerate and positive independent identically distributed(i.i.d.) random variables with common absolutely continuous distribution function F(x) and $E(X^2)$ < ${\infty}$. The random variables $X_1+{\cdots}+X_n$ and $\frac{X_1+{\cdots}+X_m}{X_1+{\cdots}+X_n}$are independent for 1 $1{\leq}$ m < n if and only if $X_1$, ${\cdots}$, $X_n$ have gamma distribution.

• Kyungpook Mathematical Journal
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• v.60 no.4
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• pp.683-710
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• 2020

Let ℕ be the set of nonnegative integers and 𝕬 be a 2-torsion free triangular algebra over a commutative ring ℛ. In the present paper, under some lenient assumptions on 𝕬, it is proved that if Δ = {𝛿_n}_n∈ℕ is a sequence of ℛ-linear mappings 𝛿_n : 𝕬 → 𝕬 satisfying ${\delta}_n([[x,\;y],\;z])\;=\;\displaystyle\sum_{i+j+k=n}\;[[{\delta}_i(x),\;{\delta}_j(y)],\;{\delta}_k(z)]$ for all x, y, z ∈ 𝕬 with xy = 0 (resp. xy = p, where p is a nontrivial idempotent of 𝕬), then for each n ∈ ℕ, 𝛿_n = d_n + 𝜏_n; where d_n : 𝕬 → 𝕬 is ℛ-linear mapping satisfying $d_n(xy)\;=\;\displaystyle\sum_{i+j=n}\;d_i(x)d_j(y)$ for all x, y ∈ 𝕬, i.e. 𝒟 = {d_n}_n∈ℕ is a higher derivation on 𝕬 and 𝜏_n : 𝕬 → Z(𝕬) (where Z(𝕬) is the center of 𝕬) is an ℛ-linear map vanishing at every second commutator [[x, y], z] with xy = 0 (resp. xy = p).

• Korean Journal of Mathematics
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• v.20 no.4
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• pp.371-379
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• 2012

Let D be an integral domain, $\bar{D}$ be the integral closure of D, * be a star operation of finite character on D, $*_w$ be the so-called $*_w$-operation on D induced by *, X be an indeterminate over D, $N_*=\{f{\in}D[X]{\mid}c(f)^*=D\}$, and $Kr(D,*)=\{0\}{\cup}\{\frac{f}{g}{\mid}0{\neq}f,\;g{\in}D[X]$ and there is an $0{\neq}h{\in}D[X]$ such that $(c(f)c(h))^*{\subseteq}(c(g)c(h))^*$}. In this paper, we show that D is a *-quasi-Pr$\ddot{u}$fer domain if and only if $\bar{D}[X]_{N_*}=Kr(D,*_w)$. As a corollary, we recover Fontana-Jara-Santos's result that D is a Pr$\ddot{u}$fer *-multiplication domain if and only if $D[X]_{N_*} = Kr(D,*_w)$.

• Journal of applied mathematics & informatics
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• v.22 no.1_2
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• pp.247-262
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• 2006

The main objective of this paper is to study the boundedness character, the periodic character and the global stability of the positive solutions of the following difference equation $x_{n+1}=\frac{{\alpha}x_n+{\beta}x_{n-1}+{\gamma}x_{n-2}+{\delta}x_{n-3}}{Ax_n+Bx_{n-1}+Cx_{n-2}+Dx{n-3}}$, n=0, 1, 1, ... where the coefficients A, B, C, D, ${\alpha},\;{\beta},\;{\gamma},\;{\delta}$ and the initial conditions x-3, x-2, x-1, x0 are arbitrary positive real numbers.