• Applied Chemistry for Engineering
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• v.23 no.6
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• pp.588-593
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• 2012

In this study, selective catalytic reduction (SCR) reaction was performed using liqufied petroleum gas (LPG) as a reductant for removing NOx. The catalysts were manufactured with different amounts of Cu and Fe supported on HZSM-5 in order to remove NOx. The NOx conversion ratio was studied with changing the temperature and the catalyst amount. The catalysts were manufactured by calcination with flowing the ambient air at $500^{\circ}C$ for three hours. Cupper of 1~4 wt% and iron of 0.5~2 wt% were supported on HZSM-5 of which Si/Al ratio were 80. According to the reaction results, the catalyst which Cu of 3 wt% supported on HZSM-5 showed the highest conversion rate. XRD, XPS, and TPR analysis were also performed for the characterization of catalysts.

• Journal of the Korean Ceramic Society
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• v.34 no.9
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• pp.941-948
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• 1997

CuCl nanocrystallites dispersed nonlinear optical silica and borosilicate glasses were fabricated by sol-gel process. CuCl powder was dissolved in TEOS(Si(OC2H5)4) and TMB((CH3O)3B), precursors of silica and borosilicate glasses, with ethanol, water and HCl, and precipitated through the heat treatment in the matrix glass. The optical properties of CuCl doped glasses were measured using the spectrophotometer at room temperature and low temperature(77K); Z1, 2 and Z3 exciton peaks from the absorption spectra, were observed at about 370 nm and 380 nm, respectively. The average radius of nanocrystallites, calculated from the blue shift of Z3 excitons, was measured according to annealing temperature and time. The precipitation temperature of CuCl nanocrystallites was decreased when boron was added to silica glass. Increase of annealing temperature and time made average radius of nanocrystallites saturated about 2 nm.

• Journal of the Korean Ceramic Society
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• v.34 no.4
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• pp.436-442
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• 1997

The bimodal distribution of CuCl nano-crystals precipitated in alumino-borosilicate glass matrix (30SiO2-45B2O3-7.5Al2O3-7.5Na2O-7.5CaO-2.5GeO2(mole %)) was investigated by TEM and the temperature dependent optical spectroscopy. Two types of CuCl particles with different size were observed by TEM and it was confirmed by the splitting of Z3 absorption peak at low temperature and the occurrence of deflection point in the optical spectra with temperature.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.5
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• pp.563-571
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• 2012

In 3D integration package using TSV technology, bonding is the core technology for stacking and interconnecting the chips or wafers. During bonding process, however, warpage and high stress are introduced, and will lead to the misalignment problem between two chips being bonded and failure of the chips. In this paper, a finite element approach is used to predict the warpages and stresses during the bonding process. In particular, in-plane deformation which directly affects the bonding misalignment is closely analyzed. Three types of bonding technology, which are Sn-Ag solder bonding, Cu-Cu direct bonding and SiO2 direct bonding, are compared. Numerical analysis indicates that warpage and stress are accumulated and become larger for each bonding step. In-plane deformation is much larger than out-of-plane deformation during bonding process. Cu-Cu bonding shows the largest warpage, while SiO2 direct bonding shows the smallest warpage. For stress, Sn-Ag solder bonding shows the largest stress, while Cu-Cu bonding shows the smallest. The stress is mainly concentrated at the interface between the via hole and silicon chip or via hole and bonding area. Misalignment induced during Cu-Cu and Sn-Ag solder bonding is equal to or larger than the size of via diameter, therefore should be reduced by lowering bonding temperature and proper selection of package materials.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.59-65
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• 1999

In this paper, we had studied the possibility of application as Cu thin films from (hfac)Cu(VTMOS) which is very stable. Cu thin films had been studied as a function of deposition temperature. Substrates used in the experiment were PVD TiN on Si wafer. Deposition conditions were as follow : deposition temperature $50^{\circ}C$. Cu thin films were analyzed by AES, four point probe, XRD and SEM. All of deposited films were very pure and some favoring of <111> planes perpendicular to the substrate surface were observed. Cu thin films had two distinct growth rates at various deposition temperature. One is the surface reaction limited region below $200^{\circ}C$, and the other is the mass transport limited region above $200^{\circ}C$. The resistivity of deposited Cu thin films under the optimum deposition condition is $2.5mu\Omega.cm$ Thus, properties of deposited Cu thin films using (hfac)Cu(VTMOS) didn't show difference with Cu thin films from other precursors.

• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.13-20
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• 1998

The crystallographic and high frequency characteristics of $Fe_{73.9}Cu_{1.0}Nb_{3.5}Si_{14.0}B_{7.6}$ soft magnetic alloys were investigated under the magnetic field annealing. As-cast ribbon with which already imbedded nanocrystalline Fe-Si phase on the surface have a preferred orientation with (400) plane to surface and also with the [011] direction parallel to the ribbon length. The extra nanocrystalline Fe-Si phase appeared throughout at 45$0^{\circ}C$ in samples with or without the longitudinal magnetic field. However the formation of nanocrystalline phase does not appear on the suface layer until 50$0^{\circ}C$ annealing temperature under the transverse field. The cryststallization fraction of annealed samples with longitudinal magnetic field is higher than that of samples without magnetic field. When the transverse magnetic field is applied, the crystallization fraction does not increases but decreases until 50$0^{\circ}C$. However the crystallization of internal regions can be confirmed by X-ray diffraction measurement via tilting the sample. It was found that for all samples, the saturation induction were all same with 1.3 T. The coercive field of as-cast sample was 1.06 A/cm, but in annealed samples it decrease from 0.56 to 0.1 A/cm with increasing annealing temperature from 400 and 55$0^{\circ}C$, respectively. The squareness of annealed samples under transverse magnetic field has a small value than that of both without field and with longitudinal field annealing.

• Korean Journal of Metals and Materials
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• v.49 no.5
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• pp.388-394
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• 2011

High speed copper filling into TSV (through-silicon-via) for three dimensional stacking of Si chips was investigated. For this study, a tapered via was prepared on a Si wafer by the DRIE (deep reactive ion etching) process. The via had a diameter of 37${\mu}m$ at the via opening, and 32${\mu}m$ at the via bottom, respectively and a depth of 70${\mu}m$. $SiO_2$, Ti, and Au layers were coated as functional layers on the via wall. In order to increase the filling ratio of Cu into the via, a PPR (periodic pulse reverse) wave current was applied to the Si chip during electroplating, and a PR (pulse reverse) wave current was applied for comparison. After Cu filling, the cross sections of the vias was observed by FE-SEM (field emission scanning electron microscopy). The experimental results show that the tapered via was filled to 100% at -5.85 mA/$cm^2$ for 60 min of plating by PPR wave current. The filling ratio into the tapered via by the PPR current was 2.5 times higher than that of a straight via by PR current. The tapered via by the PPR electroplating process was confirmed to be effective to fill the TSV in a short time.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.251-258
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• 1996

The reactions between an active metal brazing alloy and interlayers together with the effects of interlayer type on the interfacial microstructure change were investiaged for silicon nitride/stainless steel joint. The bending strengths were measured for joints with Mo, Cu, Ni interlayer type of different thicknesses. It was found that the interlayer with a low yield strength value is effective to improve the bending strength of the Si3N4/stainless steel joint. The maximum joint strength obtained at room temperature for a laminated Cu/Mo interlayer was about 460 MPa. The combined use of Mo and thin Cu layer was found to be effective in enhancing the bending strength for the Si3N4/S.S.316 joint.

• Korean Journal of Metals and Materials
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• v.50 no.12
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• pp.897-905
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• 2012

Directional solidification experiments were carried out in a hypoeutectic Al-11.3Si-3.5Cu system to investigate the microstructural evolution with the solidification rate. At a fixed temperature gradient, a dendritic microstructure was observed at a constant speed of more than $25{\mu}ms^{-1}$, a cellular interface developed at $5{\mu}ms^{-1}$ and the growth rate of $0.5{\mu}ms^{-1}$ led to the stability of the planar interface. The results revealed that primary silicon phases formed among cells, even though the studied Al-Si alloy system formed the composition within a hypoeutectic silicon composition. This suggests that the liquid concentration among cells during solidification reached a higher concentration, i.e., the eutectic concentration. It is, however, interesting that primary silicon phases did not form during a dendritic growth of more than $25{\mu}ms^{-1}$. These experimental observations are explained using the theoretical models on the interface temperatures.

• Journal of Korea Foundry Society
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• v.13 no.4
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• pp.342-349
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• 1993

The purpose of this study is to obtain basic information on the particle dispersion, the coefficient of thermal expansion and the thermal conductivity of compocasted Al-xSi-2Cu-1Mg/ySiC(x:6, 12, 18. $y:0{\sim}10wt.%$) composite. With increasing the content of SiC particles, the thermal expension coefficient and the thermal conductivity decrease. The coefficient of thermal expension between 20 and $300^{\circ}C$ is $21.3{\times}10^{-6}/^{\circ}C{\sim}18.0{\times}10^{-6}/^{\circ}C$ for the Al-Si alloys and $18.4{\times}10^{-6}/^{\circ}C{\sim}16.0{\times}10^{-6}/^{\circ}C$ for the composite with 10wt.% SiC. The thermal conductivity at $300^{\circ}C$ is $121{\sim}169W{\cdot}m^{-1}{\cdot}k^{-1}$ for the Al-Si alloys and $114{\sim}159W{\cdot}m^{-1}{\cdot}k^{-1}$ for the composite with 10wt.% SiC.