Browse > Article
http://dx.doi.org/10.3365/KJMM.2011.49.5.388

High Speed Cu Filling into Tapered TSV for 3-dimensional Si Chip Stacking  

Kim, In Rak (Dept. of Materials Sci. and Eng., University of Seoul)
Hong, Sung Chul (Dept. of Materials Sci. and Eng., University of Seoul)
Jung, Jae Pil (Dept. of Materials Sci. and Eng., University of Seoul)
Publication Information
Korean Journal of Metals and Materials / v.49, no.5, 2011 , pp. 388-394 More about this Journal
Abstract
High speed copper filling into TSV (through-silicon-via) for three dimensional stacking of Si chips was investigated. For this study, a tapered via was prepared on a Si wafer by the DRIE (deep reactive ion etching) process. The via had a diameter of 37${\mu}m$ at the via opening, and 32${\mu}m$ at the via bottom, respectively and a depth of 70${\mu}m$. $SiO_2$, Ti, and Au layers were coated as functional layers on the via wall. In order to increase the filling ratio of Cu into the via, a PPR (periodic pulse reverse) wave current was applied to the Si chip during electroplating, and a PR (pulse reverse) wave current was applied for comparison. After Cu filling, the cross sections of the vias was observed by FE-SEM (field emission scanning electron microscopy). The experimental results show that the tapered via was filled to 100% at -5.85 mA/$cm^2$ for 60 min of plating by PPR wave current. The filling ratio into the tapered via by the PPR current was 2.5 times higher than that of a straight via by PR current. The tapered via by the PPR electroplating process was confirmed to be effective to fill the TSV in a short time.
Keywords
electronic materials; plating; defects; scanning electron microscopy (SEM); three dimensional packaging;
Citations & Related Records

Times Cited By SCOPUS : 3
연도 인용수 순위
  • Reference
1 Y. K. Tsuiand and S. W. Ricky, IEEE Trans. Adv. Pack. 28, 413 (2004).
2 Y. N. Kim, J. M. Koo, S. K. Park, and S. B. Jung, J. Kor. Inst. Met. & Mater. 46, 33 (2008).
3 K. Takahashi, M. Umemoto, N. Tanaka, K. Tanida, Y. Nemoto, Y. Tomita, M. Tago, and M. Bonkohara, Microelectron. Reliabil. 43 1267 (2003).   DOI   ScienceOn
4 R. Hon, S. W. Ricky Lee, Shawn X. Zhang, and C. K. Wong, IEEE 2005 Elec. Pack. Tech. Conf. 384-389 (2005)
5 M. Karnezos, Electron. Manufac. Tech. Sympo., 29th Int'l conf. IEEE/CPMT/SEMI., p64, San Jose (2004).
6 C. Y. Yin, M. O. Alam, Y. C. Chan, C. Bailey, and H. Lu, Microelectron. Reliabil. 43, 625 (2003).   DOI   ScienceOn
7 L. J. Ladani, Microelectron. Eng. 87, 208 (2010).   DOI   ScienceOn
8 X. Gagnard and T. Mourier, Microelectron. Eng. 87, 470 (2010).   DOI   ScienceOn
9 J. C. Eloy, Market trends & Cost Analysis for 3D ICs., http://www.yole.fr/(2007).
10 T. Luoh and C. T. Su, T. H. Yang, K. C. Chen, and C. Y. Lu, Microelectron. Eng. 85, 1739 (2008).   DOI   ScienceOn
11 E. M. Chow, V. Chandrasekaran, T. Nishida, M. Sheplak, C. F. Quate, T. W. Kenny, and A. Partridge, J. Micro Electromechanical sys. 11, 631 (2002).   DOI   ScienceOn
12 K. Ishihara, C. F. Yung, A. A. Ayon, and M. A. Schmidt, J. Microelectromech. Sys. 8. 403 (1999).   DOI   ScienceOn
13 T. Takizawa, S. Ymamoto, K. Otsubo, and A. Kawasaki, Proceed. 15th IEEE Intl Conf. on Micro Electro Mechanical Sys., p. 338-391 IEEE, Las Vegas, (2002).
14 T. Kobayashi, j. Kawasaki, K. Miura, and H. Honma, Electrochemical Acta 47, 85 (2001).   DOI   ScienceOn
15 M. Lefebvre, G. Allardyce, M. Seita, H. Tsuchida, M. Kusaka, and S. Hayashi, Circuit World 29, 9 (2003).   DOI   ScienceOn
16 C. Lee, S. Tsuru, Y. Kanda, S. Ikeda, and M. Matsumura, J. Electrochem. Soc., 156, D543 (2009).   DOI   ScienceOn
17 K. Y. K. Tsui, S. K. Yau V. C. K. Leung, P. Sun, and D. X. Q. Shi, Proceed. Intl Conf. on Electronic Pack. Tech. & High Density Pack. (ICEPT-HDP), p.23, IEEE, Beijing, (2009).
18 M. Y. Kim, T. S. Oh, and T. S. Oh, Kor. J. Met. Meter. 48, 557, (2010).
19 A. Pohjoranta and R. Tenno, J. Electrochem. Soc., 154. D502 (2007).   DOI   ScienceOn
20 J. S. Bae, G. H. Chang, and J. H. Lee, J. Microelectron. & Pack. Soc. 12. 129 (2005).
21 I. R. Kim, J. K. Park, Y. C. Chu, and J. P. Jung, Kor. J. Met. Mater. 48, 667 (2010).
22 S. Spiesshoefer, J. Patel, T. Lam, L. Cai, S. Polamreddy, R. F. Figueroa, S. L. Burkett, L. Schaper, R. Geil, and B. Rogers, J. Vac. Sci. Technol. A 24, 1277 (2006).   DOI   ScienceOn
23 K. S. Kim, Y. C. Lee, J. H. Ahn, J. Y. Song, C. D. Yoo, and S. B. Jung, Kor. J. Met. Mater. 48, 1028 (2010).   DOI   ScienceOn
24 R. Nagarajan, K. Prasad, L. Ebin, and B. Narayanan, Sensors and Actuators A 139, 323 (2007).   DOI   ScienceOn
25 M. W. Newman, S. Muthukumar, M. Schuelein, T. Dambrauskas, P. A. Dunaway, J. M. Jordan, S. Kulkarni, C. D. Linde, T. A. Opheim, R. A. Stingel, W. Worwag, L. A. Topic, and J. M. Swan, IEEE 2006 Elect. Compo. and Tech. Conf., pp. 394-398 (2006).
26 W. Ahmed, E. Ahmed, and A. A. Dost, J. Materials Science: Materials in Electronics 7, 127 (1996).
27 K. Takahashi, H. Terao, Y. Tomita, Y. Yamaji, M. Hoshino, T. Sato, T. Morifuji, M. Sunohara, and M. Bonkohara, Jpn J. Appl. Phys. 40, 3032 (2001).   DOI
28 H. H. Hsu, K. H. Lin, S. J. Lin, and J. W. Yeh, J. Electrochem. Soc. 148, C47 (2001).   DOI   ScienceOn
29 B. S. Kang, S. M. Lee, J. S. Kwak, D. S. Yoon, and H. K. Baik, J. Electrochem. Soc. 144, 1807 (1997).   DOI   ScienceOn
30 S. S. Wong, C. Ryu, H. Lee, A. L. S. Loke, K. W. Kwon, S. Bhattacharya, R. Eaton, R. Faust, B. Mikkola, J. Mucha, and J. Ormando, Proceed. Intl Interconnect Tech. Conf. p.107, San Francisco (1998).
31 S. W. Yoon, D. W. Yang, J. H. Koo, Meenakshi Padmanathan, and Flynn Carson, IEEE Intl Conf. on 3D System Integration, 2009. 3DIC, 1-5 IEEE, San Francisco (2009).