• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.84-89
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• 2012

Attempts were made to develop a stable gray pigment at reducing atmosphere, substituting Ti in $ZrTiO_4$ with Mn, Fe, Co and Cu The pigment synthesized at $1300~1500^{\circ}C$ by solid state method with the composition of $ZrTi_{1-x-y}A_xB_yO_4$ (x = y = 0.005, 0.015, 0.035, 0.055, 0.075, 0.095, 0.115, 0.135, 0.155, 0.175 and 0.195 mole, A = Mn(III), Fe(III), Co(II, III) and Cu(II) (chromophores), B = Sb (counterion). The pigments were fired at $1400^{\circ}C$ for 3 h with substitute amount changes of Mn, Fe, Co and Cu to $ZrTiO_4$ crystals, and analyzed by Raman spectroscopy to figure out substitute limits. Results indicated 0.035 mole for Mn, 0.115 mole for Fe, 0.015 mole for Co and 0.015 mole for Cu as substitute limits, respectively. Figs. 1, 2, 3, and 4 represent each substitute pigments of Mn, Fe, Co and Cu. Synthesized pigment was applied to a lime and a lime-magnesia glaze at 7 wt% each, and fired at reducing atmosphere of $1240^{\circ}C$, soaking time 1h. Gray color was obtained with CIE-$L^*a^*b^*$ values at 44.55, -0.65, 1.19(Mn), 40.36, -0.90, 0.30(Fe), 42.63, -0.03, -1.49(Cu) and -40.79, -0.28, -0.91(Co), respectively.

• Korean Journal of Materials Research
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• v.26 no.3
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• pp.123-129
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• 2016

The morphology, crystal structure and size of aerosol nanoparticles generated by erosion of electrodes made of different materials (titanium, copper and aluminum) in a multi-spark discharge generator were investigated. The aerosol nanoparticle synthesis was carried out in air atmosphere at a capacitor stored energy of 6 J, a repetition rate of discharge of 0.5 Hz and a gas flow velocity of 5.4 m/s. The aerosol nanoparticles were generated in the form of oxides and had various morphologies: agglomerates of primary particles of $TiO_2$ and $Al_2O_3$ or aggregates of primary particles of $Cu_2O$. The average size of the primary nanoparticles ranged between 6.3 and 7.4 nm for the three substances studied. The average size of the agglomerates and aggregates varied in a wide interval from 24.6 nm for $Cu_2O$ to 46.1 nm for $Al_2O_3$.

• Journal of Magnetics
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• v.21 no.1
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• pp.46-50
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• 2016

$Fe_2O_3/TiO_2$ nanocomposite were successfully synthesized by co-precipitation method using $Fe(NO_3)_3{\cdot}9H_2O$ and $Ti(SO_4)_2$ as raw materials. Structural and textural features of the mixed oxide samples were characterized by X-ray diffractometer, field emission scanning electron microscopy and energy-dispersive X-ray. The effects of initial concentration of oxytetracycline (OTC), different competitive ions and organics on the photocatalytic degradation rate of OTC by the $Fe_2O_3/TiO_2$ nanocomposite were analyzed under UV and visible light irradiation. The results indicate that the optimized initial concentration of OTC was 50 mg/L to achieve the best photocatalytic efficiency. $Cu^{2+}$, $NH_4{^+}$, $C_3H_8O$ and EDTA in the aqueous suspension were found to suppress the degradation rate of OTC, whereas the effect of $NO_3{^-}$ and $H_2C_2O_4$ can be ignored.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.323-324
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• 2006

저온동시 소결용 세라믹스, LTCC를 사용한 RF/MW용 고유전율 세라믹을 개발하기 위하여 300이상의 고유전율과 낮은 손실 계수를 가지는 것으로 알려진 $Ag(Nb_{1/4}Ta_{3/4})O_3$ 고용체와 $CaTiO_3$, $TiO_2$를 각각 혼합하여 공진주파수의 온도 계수가 0에 가까운 안정된 유전체 특성을 얻고자 하였다. 유전율의 온도 안정성을 도모하기 위해 음의 온도 계수를 갖는 $CaTiO_3$, $TiO_2$와 양의 온도계수를 갖는 $CaTiO_3$ 및 $TiO_2$를 일정 분율로 혼합한 복합체 구조의 시편을 제작하였다. LTCC 소자로의 적용을 위해 3wt.%의 CuO를 첨가하여 소결 온도를 낮추었으며, 소결 시편의 상 분석, 미세구조 및 전기적 특성을 조사하였다.

• Journal of Electrochemical Science and Technology
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• v.2 no.3
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• pp.136-142
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• 2011

$Li_4Ti_5O_{12}$ is prepared through a solid-state reaction between $Li_2CO_3$ and anatase $TiO_2$ for applications in lithium-ion batteries. The rate capability is measured and the electrode polarization is analyzed through the galvanostatic intermittent titration technique (GITT). The rate characteristics and electrode polarization are highly sensitive to the amount of carbon loading. Polarization of the $Li_4Ti_5O_{12}$ electrode continuously increases as the reaction proceeds in both the charge and discharge processes. This relation indicates that both electron conduction and lithium diffusion are significant factors in the polarization of the electrode. The transition metal (Cu, Ni, Fe) ion added during the synthesis of $Li_4Ti_5O_{12}$ for improving the electrical conductivity also greatly enhances the rate capability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.251-254
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• 1998

The ($0.8BaTiO_3-0.1SrTiO_3-0.1MgTiO_3$)+$0.006Nb_2O_5$ ceramics were fabricated by conventional ceramic process. The dielectric property of specimen was investigated that the specimen was sintering temperature at 1,300C for 3hours and then annealed at $1,100^{\circ}C$ for 3hours in a atmosphere (air) to be painted on the surface with CuO paste. The results of the temperature and frequency are varied, the dielectric constant and loss tangent are unsuitable for BL capacitor. The dielectric constants were varied to be negative temperature coefficient(2.000-3,000) in the temperature range between -10 and $140^{\circ}C$, the dissipation factors (tan $\delta$) were some high(0.1-0.3). It was not grain insulation, in cause of the some difficult to be annealed temperature with CuO paste and fired atmosphere. But, we have some different annealing temperature and fired atmosphere, it will be suitable BL(Boundary Layer)capacitor.

• Korean Journal of Materials Research
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• v.14 no.1
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• pp.46-51
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• 2004

The annealing of a Cu(4.5at.% Mg)/$SiO_2$/Si structure in ambient $O_2$, at 10 mTorr, and $300-500^{\circ}C$, allows for the outdiffusion of the Mg to the Cu surface, forming a thin MgO (15 nm) layer on the surface. The surface MgO layer was patterned, and successfully served as a hard mask, for the subsequent dry etching of the underlying Mg-depleted Cu films using an $O_2$ plasma and hexafluoroacetylacetone [H(hfac)] chemistry. The resultant MgO/Cu structure, with a taper slope of about $30^{\circ}C$ shows the feasibility of the dry etching of Cu(Mg) alloy films using a surface MgO mask scheme. A dry-etched Cu(4.5at.% Mg) gate a-Si:H TFT has a field effect mobility of 0.86 $\textrm{cm}^2$/Vs, a subthreshold swing of 1.08 V/dec, and a threshold voltage of 5.7 V. A novel process for the dry etching of Cu(Mg) alloy films, which eliminates the use of a hard mask, such as Ti, and results in a reduction in the process steps is reported for the first time in this work.

• Journal of the Korean Magnetics Society
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• v.17 no.6
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• pp.232-237
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• 2007

We have synthesized the low temperature sintered of Ni-Zn-Cu ferrite with nonstoichiometric composition a little deficient in $Fe_2O_3$ from $(Ni_{0.2}Cu_{0.2}Zn_{0.6})_{1+x}(Fe_2O_3)_{1-x}$. For low loss and acceleration of grain growth $TiO_2$ and $Li_2CO_3$ was added from 0.25 mol% to 1.0 mol%. The mixture of the law materials was calcinated and milled. The compacts of toroidal type were sintered at different temperature $(875^{\circ}C,\;900^{\circ}C,\;925^{\circ}C\;950^{\circ}C)$ for 2 hours in air followed by an air cooling. Then, effects of composition and sintering temperatures on the physical properties such as density, resistivity, magnetic induction, coercive force, initial permeability, and quality factor of the Ni-Zn-Cu ferrite were investigated. The density of the Ni-Zn-Cu ferrite was $4.85\sim5.32g/cm^3$, resistivity revealed $10^8\sim10^{12}\Omega-cm$. The magnetic properties obtained from the aforementioned Ni-Zn-Cu ferrite specimens were 1,300 gauss for the maximum induction, 4.5 oersted for the coercive force, 275 for the initial permeability, and 83 for the quality factor. The physical properties indicated that the specimens could be utilized as the core of high frequency range (involved microwave range) communication and deflection yoke of T.V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.790-793
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• 2000

We have fabricated good quality superconducting YBa$_2$Cu$_3$$O_{7-x}$(YBCO) thin films on Hastelloy(Ni-Cr-Mo alloys) metallic substrates with CeO$_2$and BaTiO$_3$buffer layers in-situ by pulsed laser deposition in a multi-target processing chamber. YBCO film with CeO$_2$ single buffer layer shows T$_{c}$ of 71.64 K and the grain size less than 0.1 ${\mu}{\textrm}{m}$. When BaTiO$_3$is used as a single buffer layer, the grain size of YBCO is observed to be larger than that of YBCO/CeO$_2$by 200 times and the transition temperature of the film is enhanced to be about 84 K. CeO$_2$/BaTiO$_3$double buffer layer has been adopted to enhance the superconducting properties, which results in the enhancement of the critical temperature and the critical current density to be about 85 K and 8.4 $\times$ 10$^4$ A/cm$^2$ at 77 K, respectively mainly due to the enlargement of the grain size of YBCO film.ilm.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.527-532
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• 2001

Dry etching of copper film using $O_2$ plasma and H(hfac) has been investigated. A one-step process consisting of copper film oxidation with an $O_2$ plasma and the removal of surface copper oxide by the reaction with H(hfac) to form volatile Cu(hfac)$_2$ and $H_2O$ was carried but. The etching rate of Cu in the range from 50 to 700 /min was obtained depending on the substrate temperature, the H(hfac)/O$_2$ flow rate ratio, and the plasma power. The copper film etch rate increased with increasing RF power at the temperatures higher than 215$^{\circ}C$. The optimum H(hfac)/O$_2$ flow rate ratio was 1:1, suggesting that the oxidation process and the reaction with H(hfac) should be in balance. Cu patterning using a Ti mask was performed at a flow rate ratio of 1:1 on 25$0^{\circ}C$\ulcorner and an isotropic etching profile with a taper slope of 30$^{\circ}$was obtained. Cu dry patterning with a tapered angle which is necessary for the advanced high resolution large area thin film transistor liquid-crystal displays was thus successfully obtained from one step process by manipulating the substrate temperature, RF power, and flow rate ratio.