• Journal of Electrochemical Science and Technology
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• v.9 no.4
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• pp.282-291
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• 2018

The pristine fluorine-doped $SnO_2$ (abbreviated as FTO) inverse opal (IO) was developed using a 410 nm polystyrene bead template. The nanolayered copper tungsten oxide ($CuWO_4$) was decorated on the FTO IO film using a facile electrochemical deposition, subsequently followed by annealing at $500^{\circ}C$ for 90 min. The morphologies, crystalline structure, optical properties and photoelectrochemical characteristics of the FTO and $CuWO_4$-decorated FTO (briefly denoted as $FTO/CuWO_4$) IO film were investigated by field emission scanning electron microscopy, X-ray diffraction, UV-vis spectroscopy and electrochemical impedance spectroscopy, showing FTO IO in the hexagonally closed-pack arrangement with a pore diameter and wall thickness of about 300 nm and 20 nm, respectively. Above this film, the $CuWO_4$ was electrodeposited by controlling the cycling number in cyclic voltammetry, suggesting that the $CuWO_4$ formed during 4 cycles (abbreviated as $CuWO_4$(4 cycles)) on FTO IO film exhibited partial distribution of $CuWO_4$ nanoparticles. Additional distribution of $CuWO_4$ nanoparticles was observed in the case of $FTO/CuWO_4$(8 cycles) IO film. The $CuWO_4$ layer exhibits triclinic structure with an indirect band gap of approximately 2.5 eV and shows the enhanced visible light absorption. The photoelectrochemical (PEC) behavior was evaluated in the 0.5 M $Na_2SO_4$ solution under solar illumination, suggesting that the $FTO/CuWO_4$(4 cycles) IO films exhibit a photocurrent density ($J_{sc}$) of $0.42mA/cm^2$ at 1.23 V vs. reversible hydrogen electrode (RHE, denoted as $V_{RHE}$), while the FTO IO and $FTO/CuWO_4$(8 cycles) IO films exhibited a $J_{sc}$ of 0.14 and $0.24mA/cm^2$ at $1.23V_{RHE}$, respectively. This difference can be explained by the increased visible light absorption by the $CuWO_4$ layer and the favorable charge separation/transfer event in the cascading band alignment between FTO and $CuWO_4$ layer, enhancing the overall PEC performance.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.9
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• pp.1621-1625
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• 2010

Recently, due to increase in the usage of toxic gas and inflammability gas, the ability to monitor and precisely measurement of these gases is crucial in preventing the occurrence of various accidents. CuO doped and undoped $WO_3$ thick films gas sensors were prepared using screen-printing method on alumina substrates. A structural properties of $WO_3$:CuO thick films had monoclinic phase and triclinic phase of $WO_3$ together. Sensitivity of $WO_3$:CuO sensor at 2000 ppm of $CO_2$ gas and 50 ppm of $H_2S$ gas was investigated. 4 wt% Cu doped $WO_3$ thick films had the highest sensitivity of $CO_2$ gas and $H_2S$ gas.

• Journal of Ceramic Processing Research
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• v.19 no.5
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• pp.434-438
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• 2018

The sintering behavior of $BaFe_{12}O_{19}$ with the addition of one and three weight % of $CuWO_4$ as a liquid phase sintering aid is studied. Samples are sintered in the temperature range $900-1250^{\circ}C$ and the effect of $CuWO_4$ addition on density, microstructure, phase composition and magnetic properties is examined. Compared to $BaFe_{12}O_{19}$ with no sintering aid addition, addition of 1 wt % $CuWO_4$ retards densification. Addition of 3 wt % $CuWO_4$ promotes densification at lower sintering temperatures but retards densification at temperatures > $1050^{\circ}C$. Three wt % $CuWO_4$ addition induces the formation of $BaWO_4$ and $Ba_3WFe_2O_9$ secondary phases at temperatures ${\geq}1100^{\circ}C$. Addition of $CuWO_4$ causes a decrease in saturation magnetization, remanent magnetization and coercivity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.956-960
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• 2010

CuO doped $WO_3-SnO_2$ thick film gas sensors were fabricated by screen printing method on alumina substrates and heat-treated at $350^{\circ}C$ in air. The effects of mixing ratio of $WO_3$ with $SnO_2$ on the structural and morphological properties of $WO_3-SnO_2$ were investigated X-ray diffraction and Scanning Electron Microscope. The structural properties of the $WO_3-SnO_2$:CuO thick film by XRD showed that the monoclinic of $WO_3$ and the tetragonal of $SnO_2$ phase were mixed. Nano CuO was coated on the $WO_3-SnO_2$ surface and then the surface of $WO_3$ was coated with $SnO_2$ particles with $1\sim1.5{\mu}m$ in diameters, as confirmed form the SEM image. The sensitivity of the $WO_3-SnO_2$:CuO sensor to 2000 ppm $CO_2$ gas and 50 ppm $H_2S$ gas for the various ratio of $WO_3$ and $SnO_2$ was investigated. The 4 wt% CuO doped $WO_3-SnO_2$(75:25) tkick films showed the highest sensitivity to $CO_2$ gas and $H_2S$ gas.

• Journal of the Korean Ceramic Society
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• v.38 no.11
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• pp.1046-1054
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• 2001

Effects of B$_2$O$_3$and CuO addition on the microwave dielectric properties of the PbWO$_4$-TiO$_2$ceramics were investigated in order to use this material as an LTCC material for fabrication of a multilayered RF passive components module. We found that PbWO$_4$could be used as an LTCC material because of its low sintering temperature (8$50^{\circ}C$) and fairy good microwave dielectric properties($\varepsilon$$_{r}$=21.5, Q$\times$f$_{0}$=37200 GHz and $\tau$$_{f}$ =-31 ppm/$^{\circ}C$). In order to stabilize $\tau$$_{f}$ of PbWO$_4$, TiO$_2$was added to the PbWO$_4$and the mixture was sintered at 8$50^{\circ}C$. A near zero $\tau$$_{f}$ value (+0.2 ppm/$^{\circ}C$) was obtained with 8.7 mol% TiO$_2$addition. $\varepsilon$r and Q$\times$f$_{0}$ values were 22.3 and 21400 GHz, respectively. It was believed that the decrement of Q$\times$f$_{0}$ value with TiO$_2$addition was resulted from increasing grain boundary. In order to improve Q$\times$f$_{0}$, various amounts of B$_2$O$_3$and CuO were added to the 0.913PbWO$_4$-0.087TiO$_2$mixture. The optimum amount of CuO was 0.05 wt%. At this addition, the 0.913PbWO$_4$-0.087TiO$_2$ceramic showed $\varepsilon$$_{r}$=23.5, $\tau$$_{f}$ =-2.2ppm/$^{\circ}C$, and Q$\times$f$_{0}$=32900 GHz after sintered at 8$50^{\circ}C$. In case of B$_2$O$_3$addition, the optimum amount range was 1.0~2.5 wt% at which we could obtain following results; $\varepsilon$$_{r}$=20.3~22.1, Q$\times$f$_{0}$=48700~54700 GHz, and $\tau$$_{f}$ =+2.4~+8.2ppm/$^{\circ}C$.

• Applied Chemistry for Engineering
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• v.2 no.1
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• pp.30-37
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• 1991

The production of hydrogen from steam by reduced iron with additives such as CuO, $In_2O_3$, $MoO_3$ and $WO_3$ has been kinetically investigated. It was shown that all additives have a promoting effect on reaction activity in the order of $$MoO_3{\gg}In_2O_3{\sim_=}WO_3{\sim_=}CuO$$. The shrinking core model was applied to predict the complete conversion time and the results were quite comparable with experimental values. The reaction was carried out in a fixed flow reactor packed with reduced iron with 1 wt % of additives under the conditions, $600-750^{\circ}C$, Ar flow rate of 1 L/min and steam partial pressure of 0.085 atm. The apparent activation energies were 14.2, 20.9, 21.3, 22.4 and 27.9 kJ/mol with $MoO_3$, $In_2O_3$, $WO_3$, CuO and without additive, respectively.

• Korean Chemical Engineering Research
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• v.51 no.4
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• pp.518-522
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• 2013

Cyclohexanone is important intermediate for the manufacture of caprolactam which is monomer of nylron. Cyclohexanone is generally produced by dehydrogenation reaction of cyclohexanol. In this study, highly mesoporous metal oxides such as meso-$WO_3$, meso-$TiO_2$, meso-$Fe_2O_3$, meso-CuO, meso-$SnO_2$ and meso-NiO were synthesized using mesoporous silica KIT-6 as a hard template via nano-replication method for dehydrogenation of cyclohexanol. The overall conversion of cyclohexanol followed a general order: meso-$WO_3$ >> meso-$Fe_2O_3$ > meso-$SnO_2$ > meso-$TiO_2$ > meso-NiO > meso-CuO. In particular, meso-$WO_3$ significantly showed higher activity than the other mesoporous metal oxides. Therefore, the meso-$WO_3$ has wide range of application possibilities for dehydrogenation of cyclohexanol.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.143-148
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• 2001

PbWO$_4$ can be densified at 85$0^{\circ}C$ and it shows fairy good microwave dielectric properties; dielectric constant($\varepsilon$$_{r}$) of 21.5, quality factor(Q $\times$f$_{0}$) of 37,224 GHz, and temperature coefficient of resonant frequency($\tau$/suf f/) of -31ppm/$^{\circ}C$. Due to its low sintering temperature, PbWO$_4$ can be used as a multilayered chip component at microwave frequency with high electrical performance by using high conductive electrode metals such as Ag and Cu. However, in order to use this material for microwave communication devices, the $\tau$$_{f}$ of PbWO$_4$ must be stabilized to near zero with high Q$\times$f$_{0}$. In present study, PbWO$_4$ was modified by adding TiO$_2$, B$_2$O$_3$, and CuO in order to improve the microwave dielectric properties without increasing the sintering temperature. The addition of TiO$_2$ increased the $\tau$$_{f}$ and $\varepsilon$$_{r}$, due to its high rr(200ppm/$^{\circ}C$) and $\varepsilon$$_{r}$(100). However, the addition of TiO$_2$ reduced the Q$\times$f$_{0}$ value. When the mot ratio of PbWO$_4$ and TiO$_2$ was 0.913:7.087, near zero $\tau$$_{f}$(0.2ppm/$^{\circ}C$) was obtaibed with $\varepsilon$$_{r}$=22.3, and Q$\times$f/$_{0}$=21,443GHz. With this composition, various amount of B$_2$O$_3$ and CuO were added in order to improve the quality factor. The addition, of B$_2$O$_3$ decreased the $\varepsilon$$_{r}$. However, increased Q$\times$f$_{0}$ and $\tau$$_{f}$. When 2.5 wt% of B$_2$O$_3$ was added to the 0.913PbWO$_4$-0.087TiO$_2$ ceramic, $\tau$$_{f}$ =8.2, $\varepsilon$$_{r}$=20.3, Q$\times$f$_{0}$=54784 GHz. When CuO added to the 0.913PbWO$_4$-0.087TiO$_2$ ceramic, $\tau$$_{f}$ was continuously decreased. And $\varepsilon$$_{r}$ . and Q$\times$f$_{0}$ were increased up to 1.0 wt% then decreased. At 0.1 wt% of CuO addition, the 0.913PbWO$_4$-7.087Ti0$_2$ Ceramic Showed $\varepsilon$$_{r}$=23.5, $\tau$$_{f}$=4.4ppm/$^{\circ}C$, and Q$\times$f$_{0}$=32,932 GHz.> 0/=32,932 GHz.X>=32,932 GHz.> 0/=32,932 GHz.

• Journal of Korean Society of Environmental Engineers
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• v.22 no.4
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• pp.609-617
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• 2000

This study is aimed at investigating an effect of HCl gas on selective reduction of NOx over a CuHM and $V_2O_5-WO_3/TiO_2$ catalyst. SCR process is the most effective method to remove NOx, but catalyst can be deactivated by the acidic gas such as HCl gas which is also included in flue gas from the incinerator. In dry condition of flue gas, the CuHM catalyst treated by HCl gas has shown higher NO removal activity than the fresh catalyst. The activity of the catalyst can be restored by treating at $500^{\circ}C$. On the contrary. $V_2O_5-WO_3/TiO_2$ catalyst is obviously deactivated by HCl and the deactivation increases in proportion to the concentration of HCl gas. The deactivated catalyst is not restored to it's original activity by heat treatment for regeneration. In wet flue gas stream, the CuHM catalyst has shown lower activity than fresh catalyst and $V_2O_5-WO_3/TiO_2$ catalyst was severely deactivated by HCl treatment. The activity loss of catalysts are mainly due to the decrease of Br$\ddot{o}$nsted acid site on the catalyst surface by $NH_3$ TPD. The change of BET surface area of CuHM catalyst after the reaction isn't observed but $V_2O_5-WO_3/TiO_2$ catalyst is observed. The amount of $Cu^{{+}{+}}$ and $V_2O_5$ is decreased after the reaction. From these results, it is expected that CuHM catalyst should be better than $V_2O_5-WO_3/TiO_2$ catalyst for its application to the incineration of flue gas.

• Applied Chemistry for Engineering
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• v.20 no.5
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• pp.486-492
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• 2009

Wet oxidations (WO) of quinoline in aqueous solution were carried out at $225^{\circ}C$ and $250^{\circ}C$. In the WO at $250^{\circ}C$, quinoline was degraded completely within 30 min and the reduction in total organic carbon (TOC) of 63% was achieved during 120 min. However, the rate of the reduction in TOC was only 13% within 240 min during the WO at $225^{\circ}C$. Nicotinic and acetic acid were found to be main intermediates formed during the oxidation of quinoline. With the addition of the homogeneous catalyst $CuSO_4$ or more easily oxidizable phenol, WOs of quinoline were also carried out under moderate conditions at $200^{\circ}C$. The catalytic WO with $CuSO_4$ of 0.20 g/L showed the destruction rates of quinoline and TOC comparable to those in the WO at $250^{\circ}C$. The WOs of quinoline-phenol mixture exhibited induction periods to degrade quinoline and phenol during which free radicals were produced to initiate WOs. With increasing initial concentrations of phenol at a given initial concentration of quinoline, the induction periods in the destructions of quinoline and phenol became shorter and the reduction in TOC increased from 60% to 75% during 180 min of the WOs. The reduction rate of an induction period decreased as increasing the initial concentration ratio of phenol to quinoline. On the other hand, phenol degradation in the WOs of quinoline-phenol mixtures required a longer induction period and proceeded slower compared to the case of the WO of phenol.