• Title/Summary/Keyword: $CoSi_2$ Thin Film

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Multi-physics analysis for the design and development of micro-thermoelectric coolers

  • Han, Seung-Woo;Hasan, MD Anwarul;Kim, Jung-Yup;Lee, Hyun-Woo;Lee, Kong-Hoon;Kim, Oo-Joong
    • 제어로봇시스템학회:학술대회논문집
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    • 2005.06a
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    • pp.139-144
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    • 2005
  • A rigorous research is underway in our team, for the design and development of high figure of merits (ZT= 1.5${\sim}$2.0) micro-thermoelectric coolers. This paper discusses the fabrication process that we are using for developing the $Sb_2Te_3-Bi_2Te_3$ micro-thermoelectric cooling modules. It describes how to obtain the mechanical properties of the thin film TEC elements and reports the results of an equation-based multiphysics modeling of the micro-TEC modules. In this study the thermoelectric thin films were deposited on Si substrates using co-sputtering method. The physical mechanical properties of the prepared films were measured by nanoindentation testing method while the thermal and electrical properties required for modeling were obtained from existing literature. A finite element model was developed using an equation-based multiphysics modeling by the commercial finite element code FEMLAB. The model was solved for different operating conditions. The temperature and the stress distributions in the P and N elements of the TEC as well as in the metal connector were obtained. The temperature distributions of the system obtained from simulation results showed good agreement with the analytical results existing in literature. In addition, it was found that the maximum stress in the system occurs at the bonding part of the TEC i.e. between the metal connectors and TE elements of the module.

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Study on the Development of RF Magnetron Sputter-Deposition System(I) (RF마그네트론 스퍼터 증착장치 개발연구(I))

  • Kim, Hee-Je;Moon, Dek-Soi;Jin, Yun-Sik;Lee, Hong-Sik
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.612-614
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    • 1993
  • Sputtering requires a way to bombard the target with sufficient momentum. Positive ions are the most convenient source since their energy and momentum can be controlled by applying a potential to the target. Although many types of discharges have been used for sputtering, magnetrons are now the most widely used because of the high ion current densities. Namely, plasma near the target electrode is confined by magnetic field using permanent magnet, so that the collision probability is increased. It is important to develop RF magnetron sputtering system which has many excellent merits compared with conventional methods. Our study aims to develop 1 kW RF source(13.56 MHz, TR type) and to accumulate the design and construction technology of RF magnetron sputter-deposition system. We developed 1 kW RF sputtering system to deposit thin film. These films are deposited by this RF source matched by auto-matching system using primarily argon gas. Target of Au, Ni, Al, and $SiO_2$ was well deposited on the argon pressure of 5-10 mTorr.

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Growth characteristics of titanium boride($\textrn{TiB}_{x}$) thin films deposited by dual-electron-beam evaporation (2원전자빔 증착법에 의한 티타늄붕화물($\textrn{TiB}_{x}$) 박막의 성장특성)

  • 이영기;이민상;임철민;김동건;진영철
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.1
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    • pp.20-26
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    • 2001
  • Titanium boride ($\textrn{TiB}_{x}$) films were deposited on (100) silicon substrates at the substrate temperature of $500^{\circ}C$ by means of the co-evaporation of titanium and boron evaporants during deposition. The co-evaporation method makes it possible to deposit the non-stoichiometric films with different boron-to-titanium ratio($0{\le}B/Ti \le 2.5$). The resistivity increases linearly as the boron-to-titanium ratio in the as-deposited films is increased. The surface roughness of $\textrn{TiB}_{x}$ films is changed as a function of the boron-to-titanium ratio. The XRD spectrum for pure titanium film shows a highly (002) preferred orientation. For B/Ti=0.59 ratio only a single TiB phase that shows a (111) preferred orientation is observed. However, the $\textrn{TiB}_{x}$ phase with the hexagonal structure of the $AlB_2$(C32) type appears as the boron concentration increase, and only a single $\textrn{TiB}_{x}$ phase is observed for $B/Ti \ge 2.0$ ratio. The $\textrn{TiB}_{x}$/Si samples reveal a tensile stress (3~$20{\times}^9$dyn/$\textrm{cm}^2$) in the overall composition of the films, although the magnitude of the residual stresses is depended on the nominal B/Ti ratio.

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Development of a Silicon Carbide Large-aperture Optical Telescope for a Satellite (SiC를 이용한 대구경 위성용 망원경 제작)

  • Bae, Jong In;Lee, Haeng Bok;Kim, Jeong Won;Lee, Kyung Mook;Kim, Myung-Whun
    • Korean Journal of Optics and Photonics
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    • v.33 no.2
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    • pp.74-83
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    • 2022
  • The entire process, from the raw material to the final system qualification test, has been developed to fabricate a large-diameter, lightweight reflective-telescope system for a satellite observation. The telescope with 3 anastigmatic mirrors has an aperture of 700 mm and a total mass of 66 kg. We baked a silicon carbide substrate body from a carbon preform using a reaction sintering method, and tested the structural and chemical properties, surface conditions, and crystal structure of the body. We developed the polishing and coating methods considering the mechanical and chemical properties of the silicon carbide (SiC) body, and we utilized a chemical-vapor-deposition method to deposit a dense SiC thin film more than 170 ㎛ thick on the mirror's surface, to preserve a highly reflective surface with excellent optical performance. After we made the SiC mirrors, we measured the wave-front error for various optical fields by assembling and aligning three mirrors and support structures. We conducted major space-environment tests for the components and final assembly by temperature-cycling tests and vibration-shock tests, in accordance with the qualifications for the space and launch environment. We confirmed that the final telescope achieves all of the target performance criteria.

Phase transformation and magnetic properties of $Ni_xFe_{100-x}$ thin films deposited by a co-sputtering (동시 스퍼터링법으로 제조된 $Ni_xFe_{100-x}$ 박막의 상변화와 자기적 특성)

  • Kang, Dae-Sik;Song, Jong-Han;Nam, Joong-Hee;Cho, Jeong-Ho;Chun, Myoung-Pyo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.19 no.6
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    • pp.282-287
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    • 2009
  • $Ni_xFe_{100-x}$ films with a thickness of about 100nm were deposited on Si(100) substrates at room temperature by a DC magnetron co-sputtering using Fe and Ni targets. Compositional, structural, electrical and magnetic properties of the films were investigated. $Ni_{67}Fe_{33}$, $Ni_{55}Fe_{45}$, $Ni_{50}Fe_{50}$, $Ni_{45}Fe_{55}$, $Ni_{40}Fe_{60}$ films are obtained by increasing the sputtering power of the Fe target. The films of x < 55 have BCC structure and show the phase transformation after annealing at the range of $300{\sim}450^{\circ}C$ for 2 h. On the other hand, the films of x < 50 have the mixed crystalline phases of BCC and FCC after the annealing treatment. The saturation magnetization was decreased initially by the phase transformation effect but then increased again after annealing at $450^{\circ}C$ due to the grain growth and crystallization of BCC phases.

UV-nanoimprint Patterning Without Residual Layers Using UV-blocking Metal Layer (UV 차단 금속막을 이용한 잔류층이 없는 UV 나노 임프린트 패턴 형성)

  • Moon Kanghun;Shin Subum;Park In-Sung;Lee Heon;Cha Han Sun;Ahn Jinho
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.4 s.37
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    • pp.275-280
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    • 2005
  • We propose a new approach to greatly simplify the fabrication of conventional nanoimprint lithography (NIL) by combined nanoimprint and photolithography (CNP). We introduce a hybrid mask mold (HMM) made from UV transparent material with a UV-blocking Cr metal layer placed on top of the mold protrusions. We used a negative tone photo resist (PR) with higher selectivity to substrate the CNP process instead of the UV curable monomer and thermal plastic polymer that has been commonly used in NIL. Self-assembled monolayer (SAM) on HMM plays a reliable role for pattern transfer when the HMM is separated from the transfer layer. Hydrophilic $SiO_2$ thin film was deposited on all parts of the HMM, which improved the formation of SAM. This $SiO_2$ film made a sub-10nm formation without any pattern damage. In the CNP technique with HMM, the 'residual layer' of the PR was chemically removed by the conventional developing process. Thus, it was possible to simplify the process by eliminating the dry etching process, which was essential in the conventional NIL method.

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Ion Transmittance of Anodic Alumina for Ion Beam Nano-patterning (이온빔 나노 패터닝을 위한 양극산화 알루미나의 이온빔 투과)

  • Shin S. W.;Lee J-H;Lee S. G.;Lee J.;Whang C. N.;Choi I-H;Lee K. H.;Jeung W. Y.;Moon H.-C.;Kim T. G.;Song J. H.
    • Journal of the Korean Vacuum Society
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    • v.15 no.1
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    • pp.97-102
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    • 2006
  • Anodic alumina with self-organized and ordered nano hole arrays can be a good candidate of an irradiation mask to modify the properties of nano-scale region. In order to try using porous anodic alumina as a mask for ion-beam patterning, ion beam transmittance of anodic alumina was tested. 4 Um thick self-standing AAO templates anodized from Al bulk foil with two different aspect ratio, 200:1 and 100:1, were aligned about incident ion beam with finely controllable goniometer. At the best alignment, the transmittance of the AAO with aspect ratio of 200:1 and 100:1 were $10^{-8}\;and\;10^{-4}$, respectively. However transmittance of the thin film AAO with low aspect ratio, 5:1, were remarkably improved to 0.67. The ion beam transmittance of self-standing porous alumina with a thickness larger than $4{\mu}m$ is extremely low owing to high aspect ratio of nano hole and charging effect, even at a precise beam alignment to the direction of nano hole. $SiO_2$ nano dot array was formed by ion irradiation into thin film AAO on $SiO_2$ film. This was confirmed by scanning electron microscopy that the $SiO_2$ nano dot array is similar to AAO hole array.

Optimization of Growth Gases for the Low-temperature Synthesis of Carbon Nanotubes (탄소나노튜브의 저온성장을 위한 합성가스의 최적화 연구)

  • Kim, Young-Rae;Jeon, Hong-Jun;Lee, Han-Sung;Goak, Jeung-Choon;Hwang, Ho-Soo;Kong, Byung-Yun;Lee, Nae-Sung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.4
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    • pp.342-349
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    • 2009
  • This study investigated the growth characteristics of carbon nanotubes (CNTs) by changing a period of annealing time and a $C_{2}H_{2}/H_2$ flow ratio at temperature as low as $450^{\circ}C$ with inductively coupled plasma chemical vapor deposition. The 1-nm-thick Fe-Ni-Co alloy thin film served as a catalyst layer for the growth of CNTs, which was thermally evaporated on the 15-nm-thick Al underlayer deposited on the 50-nm-thick Ti diffusion barrier. The annealing at low temperature of $450^{\circ}C$ brought about almost no granulation of the catalyst layer, and the CNT growth was not affected by a period of annealing time. A study of changing the flow rate of $C_{2}H_{2}$ and $H_2$ showed that as the ratio of the $C_{2}H_{2}$ flow rate to the $H_2$ flow rate was lowered, the CNTs were grown to be longer With further decreasing the flow ratio, the length of CNTs reached the maximum and then became shorter. Under the optimized gas flow rates, we successfully synthesized CNTs with a uniform length over a 4-inch Si wafer at $450^{\circ}C$.

Electrical Properties of Al3+ and Y3+ Co-doped SnO2 Transparent Conducting Films (Al3+와 Y3+ 동시치환 SnO2 투명전극 박막의 전기적 특성)

  • Kim, Geun-Woo;Seo, Yong-Jun;Sung, Chang-Hoon;Park, Keun-Young;Cho, Ho-Je;Heo, Si-Nae;Koo, Bon-Heun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.10
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    • pp.805-810
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    • 2012
  • Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.

Multi Layer Thin Film Deposition Using Rotatable Hexagonal Gun by Sputtering for the Insulating Glass

  • Park, Se-Yeon;Lee, Jong-Ho;Choi, Bum-Ho;Han, Young-Ki;Lee, Kee-Soo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.314-315
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    • 2012
  • 최근들어 반도체 및 디스플레이 소자의 구조가 복잡해짐에 따라 다층 박막 증착에 대한 중요성이 날로 증가하고 있다. 본 연구에서는 다층 박막을 효율적으로 증착하기 위해 회전이 가능한 육각건을 개발하였고, 이를 이용하여 에너지 절약형 단열 유리 증착 공정을 구현 하였다. 개발된 회전형 육각건은 기존 플래너형 스퍼터링 건의 확장형으로서 최대 6개의 물질을 하나의 챔버에서 증착이 가능하도록 구성되었다. 기존 공정의 경우 서로 다른 물질 증착을 위해서는 각각의 챔버가 필요한 반면, 회전형 육각건을 이용할 경우 하나의 챔버에서 공정을 진행할 수 있어 원가 절감이 가능하다. Fig. 1은 개발된 회전형 육각건의 모식도로서, 스퍼터링 타겟이 장착 가능한 건과, 회전부로 구성되어 있다. 이를 이용하여 투명전극-금속-투명전극-금속-절연체로 구성되어 있는 에너지 절약형 단열 유리용 다층 박막 증착 공정을 개발하였다. 이때 알루미늄이 도핑된 ZnO (AZO)는 RF 마그네트론 스퍼터로, 금속 박막은 DC 스퍼터, $SiO_2$ 및 SiN과 같은 절연 박막은 $O_2$$N_2$ 분위기에서 반응성 RF 스퍼터로 각각 증착하였다. Base pressure는 $10^{-7}$ torr였으며, 증착 시 공정 압력은 1~3 mTorr로 조정하였다. 증착 균일도 향상을 위해 20 rpm의 속도로 기판을 회전시켰다. Fig. 2(a)는 ZnO-Ag-ZnO 구조로 이루어진 다층 박막의 단면을 관찰한 투과전자 현미경 사진으로 각 층간의 계면이 뚜렷하게 나타남을 확인할 수 있으며, 각 층간의 intermixing 현상이 발생하지 않음을 확인 가능하다. 이를 보완하기 위해 Fig. 2(b)에서 보는 바와 같이 XPS를 이용하여 depth profile을 측정하였다. 각 층에서 서로 다른 물질이 발견되는 현상, 즉 교차 오염이 발생함에 따라 나타나는 intermixing 없이 거의 순수한 형태의 ZnO, Ag 박막 성분이 검출되었다. 이는 6개의 서로 다른 물질이 장착된 회전형 육각건을 이용하여 고 품질의 다층 박막 증착이 가능함을 제시하는 결과이다. 증착된 다층 박막의 균일도는 3.8%, 가시광선 영역에서 80% 이상의 투과도, 면저항 값은 3 ${\Omega}/{\Box}$ 이하를 보임으로서 에너지 절약형 단열 유리로서의 사양을 만족시키는 결과를 제시하였다.

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