• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.70-73
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• 1999

Amorphous silica was hydrothermally reacted for 48~120h at $170~180^{\circ}C$ in molar ratios of $SiO_{2}/(NaOH+Na_{2}CO_{3})=2~20\;and\;H_{2}O/(NaOH+Na_{2}CO_{3})=200~250$. Na-kenyaite nuclei were formed directly from amorphous silica without formation of Na-magadiite nuclei in wide range with $SiO_{2}/(NaOH+Na_{2}CO_{3})=3~20$. Above $SiO_{2}/(NaOH+Na_{2}CO_{3})=10$, Na-kenyaite always produced with a residual amorphous silica. Well-crystallized Na-kenyaite without residual amorphous silica were obtained in the range of $SiO_{2}/(NaOH+Na_{2}CO_{3})=3~10$. Morphology of Na-kenyaite exhibited that a large spherical and loosely packed aggregates changed into the smaller and individual platelets according to increase of reaction time.

• Korean Journal of Materials Research
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• v.6 no.12
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• pp.1192-1198
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• 1996

배선 재료나 salicide 트랜지스터에 적용될 것으로 기대되는 Cu 배선과 Co 단일층 및 Co/Ti 이중층을 사용하여 형성된 코발트 실리사이드간의 열적 안정성에 대하여 조사하였다. 40$0^{\circ}C$열처리후 Cu3Si 막이 CoSi2층과 Si 기판 사이에 형성되었는데, 이것은 Cu 원자의 확산에 기인한 것이다. $600^{\circ}C$에서의 열처리 후에 형성된 최종막의 구조는 각각 Cu/CoSi2/Cu3Si/Si과 TiO2/Co-Ti-Si 합금/CoSi2/Cu3Si/Si였으며, 상부에 형성된 TiO2층은 산소 오염에 의한 것으로 밝혀졌다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.394-399
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• 2016

The silicon dioxide ($SiO_2$) was deposited using various gas as oxygen and nitrous oxide ($N_2O$) in nowadays. In order to improve electrical characteristics and the interface state density ($D_{it}$) in low temperature, It was deposited with carbon dioxide ($CO_2$) and silane ($SiH_4$) gas by inductively coupled plasma chemical vapor deposition (ICP-CVD). Each $D_{it}$ of $SiO_2$ using $CO_2$ and $N_2O$ gas was $1.30{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$ and $3.31{\times}10^{10}cm^{-2}{\cdot}eV^{-1}$. It showed $SiO_2$ using $CO_2$ gas was about 2.55 times better than $N_2O$ gas. After 10 years when the thin film was applied to metal/insulator/semiconductor(MIS)-nonvolatile memory(NVM), MIS NVM using $SiO_2$($CO_2$) on tunneling layer had window memory of 2.16 V with 60% retention at bias voltage from +16 V to -19 V. However, MIS NVM applied $SiO_2$($N_2O$) to tunneling layer had 2.48 V with 61% retention at bias voltage from +20 V to -24 V. The results show $SiO_2$ using $CO_2$ decrease the $D_{it}$ and it improves the operating voltage.

• Resources Recycling
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• v.21 no.5
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• pp.65-71
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• 2012

The equilibrium distribution of bismuth and lead between molten PbO-$SiO_2$ slag and bismuth phase was studied in the temperature range of $775^{\circ}C$ to $850^{\circ}C$ in a MgO crucible. The oxygen partial pressure of atmosphere was controlled by $P_{CO2}/P_{CO}$ ratio. The value of $(%PbO)_{slag}/[%Pb]_{metal}$ increased with increasing $SiO_2$ content of slag, and the value of $(%Bi_2O_3)_{slag}/[%Bi]_{metal}$ decreased with increasing $SiO_2$ content of slag. The concentration of Pb in metal increased with increasing temperature. These experimental results agreed well with the thermodynamic prediction.

• Journal of Electrochemical Science and Technology
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• v.8 no.2
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• pp.101-106
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• 2017

$Li_2SiO_3$ was used as a coating material to improve the electrochemical performance of $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$. $Li_2SiO_3$ is not only a stable oxide but also an ionic conductor and can, therefore, facilitate the movement of lithium ions at the cathode/electrolyte interface. The surface of the $Li_2SiO_3$-coated $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ was covered with island-type $Li_2SiO_3$ particles, and the coating process did not affect the structural integrity of the $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ powder. The $Li_2SiO_3$ coating improved the discharge capacity and rate capability; moreover, the $Li_2SiO_3$-coated electrodes showed reduced impedance values. The surface of the lithium-ion battery cathode is typically attacked by the HF-containing electrolyte, which forms an undesired surface layer that hinders the movement of lithium ions and electrons. However, the $Li_2SiO_3$ coating layer can prevent the undesired side reactions between the cathode surface and the electrolyte, thus enhancing the rate capability and discharge capacity. The thermal stability of $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ was also improved by the $Li_2SiO_3$ coating.

• Bulletin of the Korean Chemical Society
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• v.28 no.4
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• pp.529-532
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• 2007

Combined temperature programmed reaction (TPR) and infrared (IR) spectroscopic studies for Fischer- Tropsch reaction have been performed over Ru/SiO2 and Ru-Ag/SiO2 supported catalysts. Reaction of linearly absorbed CO with hydrogen starts at 375 K over Ru/SiO2 catalyst and reaches maximum at 420 K accompanied with an intensity decrease of linear CO absorption. The reaction with bridged absorbed CO peaks around 510-535 K. Addition of Ag yields mixed Ru-Ag bimetallic sites while it suppresses the formation of bridged bonded CO. Formation of methane on this modified surface occurs at 390 K and reaches maximum at 444 K. Suppression of hydrogen on the Ag-doped surface also occurs resulting in the formation of unsaturated hydrocarbons and of CHx intermediates not observed with Ru/SiO2 catalyst. Such intermediates are believed to be the building blocks of higher hydrocarbons during the Fischer-Tropsch synthesis. Linearly absorbed CO is found to be more reactive as compared to bridged CO. The Ag-modified surface also produces CO2 and carbon. On this surface, hydrogenation of CO begins at 390 K and reaches maximum at 494 K. The high temperature for hydrogenation of absorbed CO and C over Ru-Ag/SiO2 catalyst as compared to Ru/SiO2 catalyst is due to the formation of Ru-Ag bimetallic surfaces impeding hydrogen adsorption.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.166-166
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• 2003

Si (100) 기판위에서 에피텍셜하게 자란 CoSi$_2$층은 우수한 열적안정성, 낮은 junction leakage, ultra-Shallow junction형성 등의 장점으로 인하여 많은 주목을 받아왔다. 그래서 에피텍셜 CoSi$_2$층을 형성하기 위한 많은 방법들이 보고되어 왔다. 그 방법으로는 Ti나 TiN층을 이용한 interlayer mediated epitaxy, Co의 제한적 공급을 통한 molecular beam epitaxy와 molecular beam allotaxy, 그리고 금속유기소스를 이용한 반응성화학기상증착법등이 있다. 하지만 이 방법들은 복잡한 증착공정과 열처리 후 잔류층 제거의 어려움등을 가지고 있다. 본 연구는 일반적으로 사용되는 Ti나 oxide의 중간층없이 에피층을 형성시키는 새로운 방법으로 CO-O-N 박막으로부터 열처리에 의해 확산된 Co로부터 CoSi$_2$에피층을 형성시켰다.

• Korean Journal of Materials Research
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• v.6 no.8
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• pp.779-785
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• 1996

Thin $700^{\circ}C$films were formed through layer inversion of Co/Nb bilayer during rapid thermal annealing(RTA). The Nb interlayer seems to effectively prevent over-consumption of Si and to control the silicidation reaction by forming Co-Nb intermetallic compounds and removing the native oxide formed on Si substrate which interferes the uniform Co-Si interaction. The final layer structure of the Co/Nb bilayer after $700^{\circ}C$ RTA was found to be ${Nb}_{2}{O}_{3}$/${Co}_{2}$Si.CoSi/${NbCo}_{x}$/Nb(O, C)/${CoSi}_{2}$/ Si. The layer inversion and the formation of a stable CoSi, phase occurred above $700^{\circ}C$, and the Nb silicides were not found at any annealing temperature. These may be due to the formation of very stable Co-Nb intermetallic compounds and Nb oxides which limit the moving of Co and Si.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.1
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• pp.83-86
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• 2004

A high temperature tolerant microelectronic-based carbon monioxde(CO) gas sensor has been developed. The gas sensing performance has been studied over a wide temperature range$(100-300^\circ{C)}$. The gas sensitivity of the sensor is high, its initial sensing behavior is very fast, and the sensor is reproducible. Pt-SiC and $Pt-SnO_2-SiC$ diodes are fabricated using standard semiconductor processes and their CO gas-sensing behaviors are analyzed as a function of CO gas concentration and temperature by I-V and $\Delta{I-t}$ methods under steady-state and transient conditions. The sensitivity of the device with $Pt-SnO_2$ catalytic gate is higher than that of the Pt gate. The experimental results indicate that $SnO_2$ layer improves the catalytic reaction of the Pt layer.

• Bulletin of the Korean Chemical Society
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• v.18 no.9
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• pp.1002-1006
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• 1997

1H NMR spectra of D2O solutions containing 2,2-dimethylaziridine (1) or 2-methylaziridine (2) and [SiW11COⅡO39]6- (SiW11Co) or [SiW11NiⅡO39]6- (SiW11Ni) exhibit separate signals for the free ligand and the complex, indicating that the ligand exchange is slow on the NMR time scale. Identified are two linkage isomers with the methyl group of 2 at trans or cis position with respect to the metal. The isotropic shifts of 1 and 2 coordinated to SiW11Ni originate mainly from the contact shifts, and they agree reasonably with the relative values reported for similar ligands coordinated to bis(2,4-pentanedionato)nickel(Ⅱ). The isotropic shifts for the SiW11Co complexes were separated into contact and pseudocontact contributions. The pseudocontact shifts show that (χ∥-χ⊥) is positive, while that for the SiW11Co complexes of pyridine derivatives is negative. This result indicates that the ordering of dxy and dxz, dyz orbitals in SiW11Co complexes can be reversed by ligands.