• Korean Journal of Materials Research
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• v.8 no.4
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• pp.288-292
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• 1998

The p*-n ultra shallow junction diode with Co/Ti bilayer silicide was formed by ion implantation of $BF_{2}$ energy : 30KeV, dose : $5\times10^{15}cm^{-2}$] onto the n-well Si(100) region and RTA-silicidation of the evaporated Co($120\AA$)/Ti($40\AA$) double layer. The fabricated diode exhibited ideality factor of 1.06, specific contact resistance of $1.2\times10^{-6}\Omega\cdot\textrm{cm}^2$ and leakage current of $8.6\muA/\textrm{cm}^2$(-3V) under the reverse bias of 3V. The sheet resistance of silicided emitter region, the boron concentration at silicide/Si interface and the junction depth including silicide layer of ($500\AA$ were about $8\Omega\Box$, $6\times10^{19}cm^{-3}$, and $0.14\mu{m}$, respectively. In the fabrication of diode, the application of Co/Ti bilayer silicide brought improvement of ideality factor on the current-voltage characteristics as well as reduction of emitter sheet resistance and specific contact resistance, while it led to a little increase of leakage current.

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.389-392
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• 1999

We employed cobalt-disilicide for high-speed logic devices. We prepared stable and low resistant $CoSi_2$ through typical fabrication process including wet cleaning and rapid thermal process (RTP). We sputtered 15nm thick cobalt on the wafer and performed RTP annealing 2 times to obtain 60nm thick $CoSi_2$. We observed spherical shape voids with diameter of 40nm in the surface and inside $CoSi_2$ layers. The voids resulted in taking over abnormal junction leakage current and contact resistance values. We report that the voids in $CoSi_2$ layers are resulted from surface pits during the ion implantation previous to deposit cobalt layer. Silicide reaction rate around pits was enhanced due to Gibbs-Thompson effects and the volume expansion of the silicidation of the flat active regime trapped dimples. We confirmed that keeping the buffer oxide layer during ion implantation and annealing the silicon surface after ion implantation were required to prevent void defects in CoSi$_2$ layers.

• Restorative Dentistry and Endodontics
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• v.23 no.2
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• pp.682-689
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• 1998

The purpose of this study was to evaluate the sealing ability of the Microseal$^{(R)}$, which was new obturation system made by Tycom company, U.S.A. Forty-five extracted single-rooted human teeth were resected at cemento-enamel junction and divided three groups. All canals were prepared using Profile system, and then each group was obturated by lateral condensation technique (group 1), vertical condensation technique (group 2) and Microseal$^{(R)}$ condensation technique (group 3) with root canal sealer. Teeth were immersed in resorcinol-formaldehyde resin for 5 days at $4^{\circ}C$ and the resin was allowed to polymerize completely for 4 days at room temperature. Teeth were resected horizontally at 1 mm (level I), 2 mm (level II), 3 mm (level III) from the anatomical root apex using low speed microtome and examined with Image analyzer (IBASR, Zeiss co., Germany.) at ${\times}25$ magnification. The gab between the canal wall and the filling material, which was filled with the resin, was measured at each of the three levels. Each ratio of leakage was expressed percentage by calculating the ratio of the area of the resin to the total area of the canal and was analyzed statistically (one-way ANOVA). The results were as follows; 1. The mean ratio of leakage (%) was 6.46% at group 1, 3.06% at group 2, 11.27% at group 3. 2. When evaluating the ratio of leakage at the three levels, there was level I> level II> level III in all groups. Especially, the difference between level I and level III was statistically significant (p<0.05). 3. When evaluating the ratio of leakage at the three groups, there was group 3> group 1> group 2 at all levels. Especially the difference between group 2 and group 3 was statistically significant (p<0.05).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.842-848
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• 1998

The stability of paraseodymium-based zinc oxide varistor consisting of Zn-Pr-Co-Cr-Y oxide was investigated according to yttria additives under different stress conditons, such as 0.8V\ulcorner\ulcorner/373K/12h and 0.85V\ulcorner\ulcorner/393K/12h. Wholly, all varistor after the stress showed nearly symmetric and stable I-V characteristics. Particularly, in the case of 2.0mol% and 4.0mol% yttria-added varistor showing a good I-V characteristics, the varation rate of varistor voltage were less 1% and that of nonlinear coefficient were about degree of 5%, and what is remarkable, leakage current with increasing stress time during the applied stress was almost constant. It the light of these facts, it is estimated that varistor constituents having 2.0mol% and 4.0mol% yittria, respectively, will be utilized to various application fields.

• Journal of Environmental Impact Assessment
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• v.21 no.3
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• pp.469-481
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• 2012

CCS(Carbon Dioxide Capture and Storage) is considered as the most effective counterplan in the mitigation of climate change. Even though the risk of leakage of $CO_2$ stored in the geologic formation is very low, the public is expected to disagree with the initiation of a CCS project without proper management plans ensuring the safety. In this study, recognition of laypeople were surveyed about CCS, climate change, characteristics of carbon dioxide, storage concepts, ground pressure, the impact of carbon dioxide, and carbon dioxide for leakage. Thereafter the factors that could affect to recognition of CCS were analyzed by regression analysis. A survey was carried out to find out the public understanding and awareness about climate change and CCS. It is the purpose of this study to propose appropriate risk management strategies based on the findings from the survey.

• International Journal of Fluid Machinery and Systems
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• v.2 no.3
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• pp.189-196
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• 2009

The effect of inlet and outlet blade angles on a micro regenerative pump head was examined in experiments. The pump head was little increased by changing the blade angles compared with the original pump with the inlet and outlet blade angles of 0 degree. The effect of the axial clearance between the impeller and the casing on the pump head was also examined. The head was increased largely by decreasing the axial clearance. The computation of the internal flow was performed to clarify the cause of the increase of the pump head due to the decrease of the clearance. The local flow rate in the casing decreased as the leakage flow rate through the axial clearance decreased due to the decrease of the clearance. It was found that the larger head in the smaller clearance was just caused by the smaller local flow rate in the casing. In the case of the smaller clearance, the smaller local flow rate caused the smaller circumferential velocity near the front and rear sides of the impeller. This caused the increase of the angular momentum in the casing and the head.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.2
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• pp.121-128
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• 2012

In this paper, a new planar transformer with a novel core configuration that can regulate the leakage inductance is proposed and described in detail. In order to design the slim size power system for flat panel TV, Two planar transformers applied to LLC resonant converter are connected in series at primary and in parallel by the center-tap winding at secondary. In this paper, a 300W low profile LLC resonant converter was built and tested to verify the proposed planar transformer.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1739-1741
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• 2002

본 논문에서는 현재 당사에서 GIS 제조업체로서 당사의 제품에 대한 예방진단 시스템을 구축한다는 계획의 일환으로서 진행하고 있는 신가평/신태백 765kV 변전소의 800kV/362kV GIS용 피뢰기 누설전류 측정장치 개발에 대한 전반적인 개요와 진행 상황에 대해서 기술하도록 한다. 우선, 피뢰기의 일반적인 열화 특성에 관해서 고찰하며, 개발된 피뢰기 누설전류측정장치의 시스템 구성도를 통해서 미소전류에 대한 신호처리기법을 소개한다. 또한, 본 장치를 개발함에 있어서 진행된 전자기 적합성(Electromagnetic Compatibility) 시험 및 절연 내력 시험에 대해서 서술하며, 시험 전, 후의 입 출력 특성을 확인함으로서 제품의 신뢰성을 검증하도록 하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.2
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• pp.76-82
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• 2003

The robust stack storage node and sufficient cell capacitance for high performance is indispensable for 90 nm DRAM capacitor. For the first time, we successfully demonstrated MIS capacitor process integration for 90 nm DRAM technology. Novel cell layout and integration technology of 90 nm DRAM capacitor is proposed and developed, and it can be extended to the next generation DRAM. Diamond-shaped OCS with 1.8 um stack height is newly developed for large capacitor area with better stability. Furthermore, the novel $Al_2O_3/HfO_2$ dielectric material with equivalent oxide thickness (EOT) of 25 ${\AA}$ is adopted for obtaining sufficient cell capacitance. The reliable cell capacitance and leakage current of MIS capacitor is obtained with ~26 fF/cell and < 1 fA/ceil by $Al_2O_3/HfO_2$ dielectric material, respectively.

• 한국연소학회:학술대회논문집
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• 2006.04a
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• pp.149-156
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• 2006

Structure of edge flame established in a mixing layer, formed between two uniformly flowing pure $CH_4$ and pure $O_2$ streams, is numerically investigated by employing a detailed methane-oxidation mechanism. The numerical results exhibited the most outstanding distinction of using pure oxygen in the fuel-rich premixed-flame front, through which the carbon-containing compound is found to leak mainly in the form of CO instead of HC compounds, contrary to the rich $CH_4-air$ premixed flames in which $CH_4$ as well as $C_2H_m$ leakage can occur. Moreover, while passing through the rich premixed flame, a major route for CO production, in addition to the direct $CH_4$ decomposition, is found to be $C_2H_m$ compound formation followed by their decomposition into CO. Beyond the rich premixed flame front, CO is further oxidized into $CO_2$ in a broad diffusion-flame-like reaction zone located around moderately fuel-rich side of the stoichiometric mixture by the OH radical from the fuel-lean premixed-flame front. Since the secondary CO production through $C_2H_m$ decomposition has a relatively strong reaction intensity, an additional heat-release branch appears and the resulting heat-release profile can no longer be seen as a tribrachial structure.