• 청정기술
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• 제16권3호
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• pp.198-205
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• 2010

염화탄화수소 열분해와 생성물분포 특성을 고찰하기 위해 등온 관형 반응기를 이용해 두 가지 실험을 수행하였다. 첫 번째는 반응분위기에 따른 열분해 특성을 파악하기 위해 $H_2$ 또는 Ar 반응분위기에서 dichloromethane ($CH_2Cl_2$) 분해율과 생성물분포 특성을 고찰하였다. Ar 반응분위기($CH_2Cl_2$/Ar 반응계)에서 보다 $H_2$ 반응분위기($CH_2Cl_2/H_2$ 반응계)에서 $CH_2Cl_2$ 분해율이 더 높았다. 이는 반응성 기체인 $H_2$ 분위기에서 $CH_2Cl_2$ 분해를 촉진시키며 수소 첨가 탈염소반응을 통해 탈염소화된 탄화수소화합물을 생성시키며, 다환방향족탄화수소 (polycyclic aromatic hydrocarbon: PAH)와 soot 생성을 억제하기 때문이다. $CH_2Cl_2/H_2$ 반응계에서 주요생성물로 탈염소화합물인 $CH_3Cl,\;CH_4,\;C_2H_6,\;C_2H_4,\;HCl$ 등이 생성되었으며, 미량 생성물로 chloroethylene이 검출되었다. $CH_2Cl_2$/Ar 반응계에서는 탄소물질수지가 낮았으며 특히 반응온도 $750^{\circ}C$ 이상에서 탄소물질 수지가 더 낮게 나타났다. 주요 생성물로는 chloroethylene과 HCl이 검출되었으며, 미량 생성물로는 $CH_3Cl$과 $C_2H_2$이 검출되었다. 고온 Ar 반응분위기에서 $CH_4$ 주입에 따른 chloroform($CHCl_3$) 분해와 생성물분포 특성을 비교 고찰하였다. $CHCl_3$ 분해율을 비교해 보면 $CH_4$을 주입할 경우($CHCl_3/CH_4/Ar$ 반응계)가 $CH_4$을 주입하지 않았을 경우($CHCl_3$/Ar 반응계)보다 분해율이 낮았다. 이는 $CHCl_3$가 분해되면서 생성되는 활성도가 큰 이중라디칼(diradical)인 :$CCl_2$가 첨가물로 주입된 $CH_4$와 반응하여 소모됨으로써 $CHCl_3$ 분해율이 상대적으로 감소되기 때문이다. Ar 반응분위기에서 $CH_4$ 첨가 여부에 따라 $CHCl_3$이 분해되면서 생성되는 생성물 분포는 큰 차이를 나타내고 있었다. 앞에서 고찰된 각 반응계에서 분해율 비교와 생성물 분포특성을 고려하고 열화학이론 및 반응속도론을 기초로 주요 반응경로를 제시하였다.

• 전기학회논문지
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• 제65권8호
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• pp.1376-1382
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• 2016

The discharge characteristics of inductively coupled $Ar/CH_4$ plasma were investigated by fluid simulation. The inductively coupled plasma source driven by 13.56 Mhz was prepared. Properties of $Ar/CH_4$ plasma source are investigated by fluid simulation including Navier-Stokes equations. The schematics diagram of inductively coupled plasma was designed as the two dimensional axial symmetry structure. Sixty six kinds of chemical reactions were used in plasma simulation. And the Lennard Jones parameter and the ion mobility for each ion were used in the calculations. Velocity magnitude, dynamic viscosity and kinetic viscosity were investigated by using the fluid equations. $Ar/CH_4$ plasma simulation results showed that the number of hydrocarbon radical is lowest at the vicinity of gas feeding line due to high flow velocity. When the input power density was supplied as $0.07W/cm^3$, CH radical density qualitatively follows the electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density.

• 전기학회논문지P
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• 제64권4호
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• pp.241-245
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• 2015

Energy Distribution Function in pure $CH_4$, $CF_4$ and mixtures of $CF_4$ and Ar, have been analyzed over a range of the reduced electric field strength between 0.1 and 350[Td] by the two-term approximation of the Boltzmann equation (BEq.) method and the Monte Carlo simulation (MCS). The calculations of electron swarm parameters require the knowledge of several collision cross-sections of electron beam. Thus, published momentum transfer, ionization, vibration, attachment, electronic excitation, and dissociation cross-sections of electrons for $CH_4$, $CF_4$ and Ar, were used. The differences of the transport coefficients of electrons in $CH_4$, mixtures of $CH_4$ and Ar, have been explained by the deduced energy distribution functions for electrons and the complete collision cross-sections for electrons. The results of the Boltzmann equation and the Monte Carlo simulation have been compared with the data presented by several workers. The deduced transport coefficients for electrons agree reasonably well with the experimental and simulation data obtained by Nakamura and Hayashi. The energy distribution function of electrons in $CF_4$-Ar mixtures shows the Maxwellian distribution for energy. That is, $f({\varepsilon})$ has the symmetrical shape whose axis of symmetry is a most probably energy.

• 한국재료학회지
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• 제28권5호
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• pp.301-307
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• 2018

A boron-doped diamond(BDD) electrode is attractive for many electrochemical applications due to its distinctive properties: an extremely wide potential window in aqueous and non-aqueous electrolytes, a very low and stable background current and a high resistance to surface fouling. An Ar gas mixture of $H_2$, $CH_4$ and trimethylboron (TMB, 0.1 % $C_3H_9B$ in $H_2$) is used in a hot filament chemical vapor deposition(HFCVD) reactor. The effect of argon addition on quality, structure and electrochemical property is investigated by scanning electron microscope(SEM), X-ray diffraction(XRD) and cyclic voltammetry(CV). In this study, BDD electrodes are manufactured using different $Ar/CH_4$ ratios ($Ar/CH_4$ = 0, 1, 2 and 4). The results of this study show that the diamond grain size decreases with increasing $Ar/CH_4$ ratios. On the other hand, the samples with an $Ar/CH_4$ ratio above 5 fail to produce a BDD electrode. In addition, the BDD electrodes manufactured by introducing different $Ar/CH_4$ ratios result in the most inclined to (111) preferential growth when the $Ar/CH_4$ ratio is 2. It is also noted that the electrochemical properties of the BDD electrode improve with the process of adding argon.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권9호
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• pp.616-621
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• 1999

A planar inductively coupled $CH_4/H_2/Ar$plasma was used to investigate dry etch characteristics of GaN as a function of input power, RF bias power, and etch gas composition. Etch rate of GaN increased with input power up to 600 W and was saturated at the higher power. Also, the etch rates increased with increasing RF bias power, composition of $CH_4$ and Ar gas. We achieved the maximum etch rate of $930{\AA}$/min at the input power 400 W, RF bias power 250 W, and operational pressure 10 mTorr. This paper shows that smooth etched surface having roughness less than 1 nm in rms can be obtained by using planar inductively coupled plasma with $CH_4/H_2/Ar$ gas chemistry.

• 한국표면공학회지
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• 제29권6호
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• pp.648-653
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• 1996

Hydrogenated amorphous carbon(a-C:H) films are prepared by rf plasma CVD in a $CH_4$ source gas system diluted with Ar of $H_2$. The spectra of emissive and reactive species in the plasma are detected using in stiu optical emission spectroscopy. Inaddition, the relationship between the film properties which can be varied by the deposition parameters and the Raman spectra is studied. In the $CH_4/H_2$ gas system, the emission intensities of CH and $H \tau$ decrease and those of $H \alpha$, $H \beta$, $C_2$ and Ar increase with increasing $H_2$ concentration, The formation of $C_2$ and CH in the $CH_4/Ar/H_2$ gas system is greatly suppressed by hydrogen addition and the excess of hydrogen addition is found to form graphite structure. The $C_2$ formation in the gas phase enhances a-C:H film formation.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2007년도 제38회 하계학술대회
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• pp.1321-1322
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• 2007

$Ar/Cl_2$, $Ar/CH_4$ 및 $Ar/Cl_{2}/CH_{4}$ 유도결합 플라즈마의 가스 혼합비에 따른 BLT 박막의 식각 메커니즘과 선택비, 식각 후 박막 표면의 조성변화를 조사하였다. BLT 박막의 최대식각률은 $Ar/Cl_2$ 플라즈마에서의 Ar 가스 혼합비가 80%일 때 50.8 nm의 값을 보였다. 이 때, 1sccm의 $CH_4$ 첨가를 통하여 선택비와 식각률을 개선할 수 있었다. 박막 표면의 xPS 분석을 통해 BLT 박막 표면의 조성변화는 Cl 원자와의 반응에 의한 화학적 식각 손상이 H 원자와의 반응에 의한 그것보다 크다는 것을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.244-244
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• 1999

Liquid Crystal Displays(LCDs) 투명성 전도막으로 사용하는 Indium Tin Oxide (ITO)의 고밀도 식각특성을 조사하였다. 특히 ITO식각의 경우, pixel electrode 전극에서 사용되는 underlayer인 SiO2, Si3N4와의 최적의 선택비를 얻는데 중점을 두고 있다. 따라서 본 실험에서는 Inductively Coupled Plasma(ICP)를 이용하여 source power, gas combination, bias voltage, pressure 및 기판온도에 따른 ITO의 식각 특성과 이의 underlayer인 SiO2, Si3N4와의 선택비를 조사하였다. Ar과 CH4를 주된 식각가스로서 사용하였으며 첨가가스로는 O2와 HBr를 사용하였다. ITO의 식각특성을 이해하기 위하여 Quadruple Mass Spectrometry(QMS), Optical emission spectroscopy(OES) 이용하였으며, 식각된 sample의 잔류물을 조사하기 위하여 X-ray photoelectron spectroscopy(XPS)를 이용하여 분석하였다. Ar gas에 적정량의 CH4 혼합이 순수한 Ar 가스로 식각한 경우에 비하여 ITO와 SiO2, Si3N4의 선택비가 높았으며, 더 높은 식각 선택비를 얻기 위하여 Ar/CH 분위기에서 첨가가스 O2, HBr을 사용하였다. Source power 및 bias 증가에 따라 ITO의 식각률은 증가하나, underlayer와의 선택비는 감소함을 보였다. 본 실험에서 측정된 ITO의 high 식각률은 약 1500$\AA$/min이며, SiO2, Si3N4와의 high selectivity는 각각 7:1, 12:1로 나타났다. ITO의 etchrate 및 선택비는 source power, bias, pressure, CH 가스첨가에 의존하였지만 기판온도에는 큰 변화가 없음을 관찰하였다. 또한 적정량의 가스조합으로 식각된 시편의 잔류물을 줄일 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권4호
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• pp.203-209
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• 2000

This paper proposes the improvement of the etch rate of GaN using a magnetized inductively coupled $CH_4/H_2/Ar$plasma. The gradient magnetic field with the axial direction is investigated using Gauss-meter and the ion current density is measured using double Langmuir probe. The applied magnetic field changes the ion current density profile in the radial direction, resulting in producing the higher density in the outer region than in the center. GaN dry etching process is carried out based on the measurements of the ion current density. The each rate of 2000 /min is achieved with $CH_4/H_2/Ar$ chemistries at 800 W input power, 250W rf bias power, 10 mTorr pressure and 100 gauss magnetic field.