• Title/Summary/Keyword: $CF_4/O_2$

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Microwave Thermal Decomposition of CF4 using SiC-Al2O3 (SiC-Al2O3 촉매를 이용한 CF4의 마이크로파 열분해)

  • Choi, Sung-Woo
    • Journal of Environmental Science International
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    • v.22 no.9
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    • pp.1097-1103
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    • 2013
  • Tetrafluoromethane($CF_4$) have been widely used as etching and chemical vapor deposition gases for semiconductor manufacturing processes. $CF_4$ decomposition efficiency using microwave system was carried out as a function of the microwave power, the reaction temperature, and the quantity of $Al_2O_3$ addition. High reaction temperature and addition of $Al_2O_3$ increased the $CF_4$ removal efficiencies and the $CO_2/CF_4$ ratio. When the SA30 (SiC+30wt%$Al_2O_3$) and SA50 (SiC+50wt%$Al_2O_3$) were used, complete $CF_4$ removal was achieved at $1000^{\circ}C$. The $CF_4$ was reacted with $Al_2O_3$ and by-products such as $CO_2/CF_4$ and $AlF_3$ were produced. Significant amount of by-product such as $AlF_3$ was identified by X-ray powder diffraction analysis. It also showed that the ${\gamma}-Al_2O_3$ was transformed to ${\alpha}-Al_2O_3$ after microwave thermal reaction.

The Etching Characteristics of Polyimide Thin Films using CF4O2 Gas Plasma (CF4O2 gas 플라즈마를 이용한 폴리이미드 박막의 식각)

  • 강필승;김창일;김상기
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.5
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    • pp.393-397
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    • 2002
  • Polyimide (PI) films have been studied widely as the interlayer dielectric materials due to a low dielectric constant, low water absorption, high gap-fill and planarization capability. The polyimide film was etched using inductively coupled plasma system. The etcying characteristics such as etch rate and selectivity were evaluated at different $CF_4/(CF_4+O_2)$chemistry. The maximum etch rate was 8300 ${\AA}/min$ and the selectivity of polyimide to SiO$_2$was 5.9 at $CF_4/(CF_4+O_2)$ of 0.2. Etch profile of polyimide film with an aluminum pattern was measured by a scanning electron microscopy. The vertical profile was approximately $90^{\circ}$ at $CF_4/(CF_4+O_2)$ of 0.2. As 20% $CF_4$ were added into $O_2$ plasma from the results of the optical emission spectroscopy, the radical densities of fluorine and oxygen increased with increasing $CF_4$ concentration in $CF_4/O_2$ from 0 to 20%, resulting in the increased etch rate. The surface reaction of etched PI films was investigated using x-ray photoelectron spectroscopy.

Etching characteristics of Ru thin films with $CF_4/O_2$ gas chemistry ($CF_4/O_2$ gas chemistry에 의한 Ru 박막의 식각 특성)

  • Lim, Kyu-Tae;Kim, Dong-Pyo;Kim, Chang-Il;Choi, Jang-Hyun;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05b
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    • pp.74-77
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    • 2002
  • Ferroelectric Random Access Memory(FRAM) and MEMS applications require noble metal or refractory metal oxide electrodes. In this study, Ru thin films were etched using $O_2$+10% $CF_4$ plasma in an inductively coupled plasma(ICP) etching system. The etch rate of Ru thin films was examined as function of rf power, DC bias applied to the substrate. The enhanced etch rate can be obtained not only with increasing rf power and DC bias voltage, but also with small addition $CF_4$ gas. The selectivity of $SiO_2$ over Ru are 1.3. Radical densities of oxygen and fluorine in $CF_4/O_2$ plasma have been investigated by optical emission spectroscopy(OES). The etching profiles of Ru films with an photoresist pattern were measured by a field emission scanning electron microscope (FE-SEM). The additive gas increases the concentration of oxygen radicals, therefore increases the etch rate of the Ru thin films and enhances the etch slope. In $O_2$+10% $CF_4$ plasma, the etch rate of Ru thin films increases up to 10% $CF_4$ but decreases with increasing $CF_4$ mixing ratio.

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Surface Reaction of Ru Thin Films Etched in CF 4/O2 Gas Chemistry (CF4/O2 Gas Chemistry에 의해 식각된 Ru 박막의 표면 반응)

  • 임규태;김동표;김경태;김창일;최장현;송준태
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.12
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    • pp.1016-1020
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    • 2002
  • Ru thin films were etched using CF/$_4$O$_2$ plasma in an ICP (inductively coupled plasma etching) system. The maximum etch rate of Ru thin films was 168 nm/min at a CF$_4$/O$_2$ gas mixing ratio of 10 %. The selectivity of SiO$_2$ over Ru was 1.3. From the OES (optical emission spectroscopy) analysis, the optical emission intensity of the O radical had a maximum value at 10% CF$_4$ gas concentration and drcrease with further addition of CF4 gas, but etch slope was enhanced. From XPS (x-ray photoelectron spectroscopy) analysis, the surface of the etched Ru thin film in CF$_4$/O$_2$ chemistry shows Ru-F bonds by the chemical reaction of Ru and F. RuF$_{x}$ compounds were suggested as a surface passivation layer that reduces the chemical reactions between Ru and O radicals. From a FE-SEM (field emission scanning electron microscope) micrograph, we had an almost perpendicular taper angle of 89$^{\circ}$.>.

Permeation Properties of Single Gases ($N_2$, $O_2$, $SF_6$, $CF_4$) through PDMS and PEBAX Membranes (PDMS와 PEBAX 분리막을 통한 단일기체($N_2$, $O_2$, $SF_6$, $CF_4$) 투과 특성)

  • Kim, Hanbyul;Lee, Minwoo;Park, Wankeun;Lee, Soonjae;Lee, Hyunkyung;Lee, Sanghyup
    • Membrane Journal
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    • v.22 no.3
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    • pp.201-207
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    • 2012
  • In this study, we investigated permeation of single gas ($N_2$, $O_2$, $CF_4$, and $SF_6$) through flat sheet membrane composed of PDMS (poly-dimethylsiloxane) and PEBAX (polyether block amides). Gas permeation experiment was performed with various feed pressure. Permeability was estimated using permeation flux measured by continuous-flow technique. The permeability of gases except $SF_6$ in PDMS were decreased with the upstream pressure increased. $SF_6$ is much more permeable than $CF_4$, which is due to higher critical temperature of $SF_6$. The permeability decreased in the following order: $O_2$ > $N_2$ > $SF_6$ > $CF_4$. On the other hand, the permeability of gases in PEBAX followed the order: $O_2$ > $N_2$ > $CF_4$ > $SF_6$ which are opposite of the order of kinematic diameter (${\AA}$)($SF_6$ > $CF_4$ > $N_2$ > $O_2$). The $SF_6/CF_4$ pure gas selectivity in PDMS was 2.1 at 0.7 MPa.

Surface Reaction of Uranium Dioxide with CF$_4$/O$_2$ Mixture Gas Plasma (CF$_4$/O$_2$ 혼합기체 플라즈마를 이용한 이산화 우라늄의 표면식각반응)

  • 민진영;김용수
    • Journal of the Korean institute of surface engineering
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    • v.32 no.2
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    • pp.165-171
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    • 1999
  • The etching reaction of $UO_2$ in $CF_4/O_2$ gas plasma is examined as functions of $CF_4/O_2$ ratio, plasma power, and substrate temperature at up to $370^{\circ}C$ under the total pressure of 0.30 Torr. It is found that the highest etching rate is obtained at 20% $O_2$ mole fraction, regardless of r. f. power and substrate temperature. The existence of the optimum $CF_4/O_2$ ratio is confirmed by SEM, XPS and XRD analysis. The highest etching reaction rate at $370^{\circ}C$ under 150W exceeds 1000 monolayers/min., which is equivalent to 0.4$\mu\textrm{m}$/min. The mass spectrometry analysis results reveal that the major reaction product is uranium hexa-fluoride $UF_6$. Based on the experimental findings, dominant overall reaction of uranium dioxide in $CF_4/O_2$ plasma is determined : $8UO_2+12CF_4+3O_2=8UF_6+12CO_{2-x}$ where $CO_{2-x}$ represents the undetermined mix of $CO_2$ and CO.

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A Study on Etch Characteristics of CeO2 Thin Film in An Ar/CF4/Cl2 Plasma (Ar/CF4/Cl2 플라즈마에 의한 CeO2 박막의 식각 특성 연구)

  • 장윤성;김동표;김창일;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.5
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    • pp.388-392
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    • 2002
  • In this work, the etching of $CeO_2$ thin films has been performed in an inductively coupled $Ar/CF_4/Cl_2$ plasma. The highest etch rate of the $CeO_2$ thin film ws 250 ${\AA}/min$ and the selectivity of CeO$_2$to SBT was 0.4 at a 10% additive $Cl_2$ into Ar/($Ar+CF_4$)gas mixing ratio of 0.8. From result of X-ray photoelectron spectroscopy (XPS) analysis, there are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. During the etching of $CeO_2$ thin films in $Ar/CF_4/Cl_2$ plama, Ce-Cl and Ce-F bond is formed, and these prodcuts can be removed by the physical bombardment of Ar ions. The 10% additive $Cl_2$ into the Ar/($Ar+CF_4$)gas mixing ratio of 0.8 could enhance the reaction between Cl, F and Ce.

Etching Characteristics of Polyimide Film as Interlayer Dielectric Using Inductively Coupled ($O_2/CF_4$)Plasma ($O_2/CF_4$ 유도결합 플라즈마를 이용한 Polyimide 박막의 식각 특성)

  • Kang, Pil-Seung;Kim, Chang-Il
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1509-1511
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    • 2001
  • In this study, etching characteristics of polyimide(Pl) film with $O_2/CF_4$ gas mixing ratio was studied using inductively coupled plasma (ICP). The etch rate and selectivity were evaluated to chamber pressure and gas mixing ratio. High etch rate (over 8000$\AA$/min) and vertical profile were acquired in $CF_4$/($CF_4+O_2$) of 0.2. The selectivities of polyimide to PR and polyimide to $SiO_2$ were 1.15, 5.85, respectively. The profiles of polyimide film etched in $CF_4/O_2$ were measured by a scanning electron microscope (SEM) with using an aluminum hard mask pattern. The chemical states on the polyimide film surface were measured by x-ray photoelectron spectroscopy (XPS).

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CF4/O2 Gas를 사용한 디스플레이용 ICP 장비의 플라즈마 시뮬레이션

  • Lee, Yeong-Jun;O, Seon-Geun;Kim, Byeong-Jun;Jeon, Jae-Hong;Seo, Jong-Hyeon;Choe, Hui-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.267-267
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    • 2014
  • 디스플레이용 유도결합 플라즈마 시스템에서 CF4/O2 혼합가스를 이용하여 SiO2 식각공정에 대한 연구를 하기 위해 플라즈마 변수들에 대한 공간 분포를 살펴 보았다. 장비의 규격은 8세대 급, 안테나는 4turn을 기본으로 하며 동일한 크기의 안테나 9개를 배치하였다. 시뮬레이션 결과에 따른 플라즈마 주요변수들(전자밀도, 전자온도, 전위차)의 공간분포와 CF3+, CF2+, CF+, O2+, O-, F+, F- 이온들에 대한 공간분포를 확인 할 수 있었다.

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Etching Kinetics Of $SrBi_2Ta_2O_{9}$ Thin Film in $Cl_{2}$/$CF_{4}$/Ar gas Chemistry ($Cl_{2}$/$CF_{4}$/Ar gas chemistry에 의한 $SrBi_2Ta_2O_{9}$ 박막의 식각 특성)

  • 김동표;김창일;이원재;유병곤;김태형;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.62-65
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    • 2001
  • $SrBi_2Ta_2O_{9}$ thin films were etched in inductively coupled $Cl_{2}$/$CF_{4}$/Ar plasma. The maximum etch rate was 1060 $\AA\textrm{m}$/min in $Cl_{2}$/$CF_{4}$/Ar (80). The chemical reactions on the etched surface were studied with x-ray photoelectron spectroscopy. The etching of SBT thin films in $Cl_{2}$/$CF_{4}$/Ar were etched by chemically assisted reactive ion etching. The small addition of $Cl_2$ into $CF_4$(20)/Ar(80) plasma will decrease the fluorine radicals and the increase Cl radical.

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