• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.824-828
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• 2016

In this study, effects of ICP (inductively coupled plasma) treatment on PAR thin film have been investigated. A maximum etch rate of the PAR thin films and the selectivity of PAR to PR were obtained as 110 nm/minand 1.1 in the $CF_4/O_2$ (5:15 sccm) gas mixture. We present the surface properties of PAR thin film with various treatment conditions. The surface morphology and cross section of the PAR thin film was observed by AFM (atomic force microscopy) and FE-SEM (filed emission scanning electron microscopy).

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.1111-1113
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• 2004

n+ etching process is investigated in the fabrication of TFF-LCD using low resistance data line of Mo/Al/Mo. Problems of consumption of upper Mo layer and contamination of channel area are resolved. Either of HCl or $Cl_2$ can be selected as a main etchant gas, and either of $SF_6$ or $CF_4$ can be selected as an additive. Plasma treatment after n+ etching process can reduce the off-current high problem.

• 한국막학회:학술대회논문집
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• 한국막학회 1995년도 추계 총회 및 학술발표회
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• pp.49-50
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• 1995

고분자분리막을 이용한 기체 혼합물의 분리방법은 심냉법(cryogenic process), 가압기체흡착법(Pressure adsorption)과 더불어 상업적으로 중요한 기체분리공정으로 부각되고 있다. 특히 고분자막 중 Polyimide 막은 열적, 화학적으로 안정하고 기체에 대한 선택성이 높으며 기계적 성질이 뛰어나 좋은 막소재로 알려져 있다. 그러나 투과도와 선택도사이에 일반적으로 Trade-off 현상이 있어서 투과도와 선택도를 동시에 향상 하려는 연구가 수행중에 있다. 본 연구에서는 높은 산소투과도를 갖는다고 보고된 6FDA-p-TeMPD막에 hexafluoropropene (HEP)으로 Plasma polymerization을 시키거나 CF$_4$, Ar기체가 플라즈마처리하여 투과특성을 개선시키고 이를 비교 고찰하였다.

• 한국유기농업학회지
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• 제32권3호
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• pp.277-288
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• 2024

국내에서 자생하고 있는 해조류를 첨가하여 in vitro 반추위 발효성상 및 메탄 발생량 분석을 실시하였다. 해조류 처리구에서 in vitro 배양 24시간대 총 가스 및 메탄 발생량 결과는 전 처리구에서 유의적인 차이가 없었으나 배양 48시간대 메탄 발생량 결과에서는 누른 끈적이와 청각 처리구에서 유의적으로(p<0.05) 낮았다. 해조류 처리구의 반추위 pH는 5.75~6.12로 대조구 대비 유의적으로(p<0.05) 낮았다. Total VFA 농도는 배양 24시간대에서 유의적인 차이가 없었으나, 청각 처리구에서 배양 48시간대 대조구 대비 유의적으로(p<0.05) 높았다. NH3-N 농도는 톳 처리구에서 배양 24시간과 48시간대 모두 대조구 대비 유의적으로 (p<0.05) 낮았다. 건물 소화율은 배양 24시간과 48시간대 모두 유의적인 차이를 보이지 않 아 해조류가 반추위 건물 소화율에 부정적인 영향을 미치지 않았다. 이를 통해 청각이 반추위 발효성상 및 소화율에 부정적인 영향을 미치지 않으면서 메탄 발생량을 감소시키는 효과를 보여, 추후 메탄 저감 소재로서 평가를 위해 가축 급여 실험을 통한 검증이 필요하다.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1078-1084
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• 2006

Impurity contamination induced by $CF_4\;and\;HBr/Cl_2/O_2$ plasma etching on Si surface was examined by using surface spectroscopes. XPS(x-ray photoelectron spectroscopy) surface analysis showed that F of 0.4 at % exists in the surface layer in the form of Si-F bonding but Br and Cl are below the detection limit $(0.1{\sim}1.0%)$ of the spectroscope. Static-SIMS(secondary ion mass spectrometry) surface analysis showed that the etched Si surface was contaminated with etching gas elements such as H, F, Cl and Br, and they existed to the depth of about $20{\sim}40nm$. The etched Si surface was treated with three different methods that were HF dip, thermal oxidation followed by HF dip and oxygen-plasma oxidation followed by HF dip. They showed an effect in reducing the impurity contamination and the oxygen-plasma oxidation followed by HF dipping method appears to be a little bit more effective.