• Title/Summary/Keyword: $Bi_2Zn_{2/3}Nb_{4/3}O_7$

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A Study on the Phase Change of Cubic Bi1.5Zn1.0Nb1.5O7(c-BZN) and the Corresponding Change in Dielectric Properties According to the Addition of Li2CO3 (Li2CO3 첨가에 따른 입방정 Bi1.5Zn1.0Nb1.5O7(c-BZN)의 상 변화 및 그에 따른 유전특성 변화 연구)

  • Yuseon Lee;Yunseok Kim;Seulwon Choi;Seongmin Han;Kyoungho Lee
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.4
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    • pp.79-85
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    • 2023
  • A novel low-temperature co-fired ceramic (LTCC) dielectric, composed of (1-4x)Bi1.5Zn1.0Nb1.5O7-3xBi2Zn2/3Nb4/3O7-2xLiZnNbO4 (x=0.03-0.21), was synthesized through reactive liquid phase sintering of Bi1.5Zn1.0Nb1.5O7-xLi2CO3 ceramic at temperatures ranging from 850℃ to 920℃ for 4 hours. During sintering, Li2CO3 reacted with Bi1.5Zn1.0Nb1.5O7, resulting in the formation of Bi2Zn2/3Nb4/3O7, and LiZnNbO4. The resulting sintered body exhibited a relative sintering density exceeding 96% of the theoretical density. By altering the initial Li2CO3 content (x) and consequently modulating the volume fraction of Bi1.5Zn1.0Nb1.5O7, Bi2Zn2/3Nb4/3O7, and LiZnNbO4 in the final sintered body, a sample with high dielectric constant (εr), low dielectric loss (tan δ), and the temperature coefficient of dielectric constant (TCε) characterized by NP0 specification (TCε ≤ ±30 ppm/℃) was achieved. As the Li2CO3 content increased from x=0.03 mol to x=0.15 mol, the volume fraction of Bi2Zn2/3Nb4/3O7 and LiZnNbO4 in the composite increased, while the volume fraction of Bi1.5Zn1.0Nb1.5O7 decreased. Consequently, the dielectric constant (εr) of the composite materials varied from 148.38 to 126.99, the dielectric loss (tan δ) shifted from 5.29×10-4 to 3.31×10-4, and the temperature coefficient of dielectric constant (TCε) transitioned from -340.35 ppm/℃ to 299.67 ppm/℃. A dielectric exhibiting NP0 characteristics was achieved at x=0.09 for Li2CO3, with a dielectric constant (εr) of 143.06, a dielectric loss (tan δ) value of 4.31×10-4, and a temperature coefficient of dielectric constant (TCε) value of -9.98 ppm/℃. Chemical compatibility experiment with Ag electrode revealed that the developed composite material exhibited no reactivity with the Ag electrode during the co-firing process.

Investigation of low temperature sintering property and fabrication in $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7\;and\;(Bi_{1.5}Zn_{0.5})(Zn_{0.5}Nb_{1.5})O_7$ pyrochlore ($Bi_2(Zn_{1/3}Nb_{2/3})_2O_7\;and\;(Bi_{1.5}Zn_{0.5})(Zn_{0.5}Nb_{1.5})O_7$ pyrochlore의 제조 및 저온 소결 특성 고찰)

  • Kim, Kwan-Soo;Yoon, Sang-Ok;Kim, Shin;Kim, Yun-Han;Kwan, Oh-Young;Park, Jong-Guk;Shim, Sang-Heung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.245-245
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    • 2007
  • 본 연구는 $Bi_2O_3$, ZnO 및 $Nb_2O_5$로 이루어진 두 가지의 $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$$(Bi_{1.5}Zn_{0.5})(Zn_{0.5}Nb_{1.5})O_7$ pyrochlore를 제조한 후, ZBS 및 BZBS 유리를 각각 첨가하여 저온 소결 및 마이크로파 유전 특성을 고찰하였다. 두 가지의 pyrochlore에 대하여 하소 온도에 따른 상 합성 유무를 고찰한 결과 $900^{\circ}C$에서 단일 상을 갖는 pyrochlore를 제조할 수 있었다. 두 가지의 pyrochlore에 ZnO-rich ZBS 유리와 $Bi_2O_3$-rich BZBS 유리를 3, 5 wt%로 첨가한 후 $800{\sim}950^{\circ}C$에서 소결한 결과 ZBS 및 BZBS 유리를 5wt%를 첨가하였을 때 $900^{\circ}C$에서 소결이 가능하였다. 또한 마이크로파 유전 특성을 고찰한 결과, $(Bi_{1.5}Zn_{0.5})(Zn_{0.5}Nb_{1.5})O_7$의 pyrochlore는 고주파에서 유전 특성 측정이 되지 않았다. $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$의 pyrochlore의 경우 5 wt% ZBS 및 BZBS 유리를 첨가하여 $900^{\circ}C$에서 소결한 시편의 마이크로파 유전 특성은 ${\varepsilon}_r$= 62.8~68.3, $Q{\times}f$ value= 3,500~2,700 GHz을 나타내었다.

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Low-temperature sintering and dielectric properties of the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ ceramics ((1-x)$BiNbO_4-(x)ZnNb_2O_6$ 세라믹스의 저온 소결 및 유전 특성)

  • Kim, Yun-Han;Yoon, Sang-Ok;Kim, Shin;Kim, Kwan-Soo;Kim, Kyung-Joo;Park, Jong-Guk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.284-284
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    • 2007
  • In this study, the microwave dielectric property variations of (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites (x=0.3, 0.5 and 0.7) with 10wt% zinc borosilicate(ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying thes system to LTCC technology. The all composition addition of 10wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, a small amount of $Bi_2SiO_5$ as the secondary phase was observed in the all composition. The substitution of $ZnNb_2O_6$ on the $BiNbO_4$ composites increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the high sintering temperature and low dielectric constant of $ZnNb_2O_6\;than\;BiNbO_4$ ceramics. The increasing of $ZnNb_2O_6$ content from 0.3 to 0.7 in the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites with 10wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 28.1~15.6 in the dielectric constant$({\varepsilon}_r)$, 5,500~8,700GHz in the $Q{\times}f$ value.

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Low-temperature sintering and dielectric properties of the $1-xBiNbO_4-xZnNb_2O_6$ ceramics ($1-xBiNbO_4-xZnNb_2O_6$ 세라믹스의 저온소결 및 유전특성)

  • Kim, Yun-Han;Yoon, Sang-Ok;Kim, Kwan-Soo;Lee, Joo-Sik;Kim, Kyung-Mi;Park, Jong-Guk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.260-260
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    • 2007
  • Low-temperature sintering and dielectric properties of the $1-xBiNbO_4-xZnNb_2O_6$ ceramics (x=0.3, 0.5, and 0.7) with 10 wt% zinc borosilicate (ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying this system to LTCC technology. The all composition addition of 10 wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. The the amount of $ZnNb_2O_6$ on $ZnNb_2O_6$ ceramics increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the higher $Q{\times}f$ value and sintering temperature of $ZnNb_2O_6$ than that of $ZnNb_2O_6$ ceramics. The increase of $ZnNb_2O_6$ content from 0.3 to 0.7 in the $1-xBiNbO_4-xZnNb_2O_6$ ceramics with 10 wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 30~20 in the dielectric constant (${\varepsilon}_r$), 3,500~4,500 GHz in the $Q{\times}f$ value.

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The Structural and Electrical Properties of Bismuth-based Pyrochlore Thin Films for embedded Capacitor Applications

  • Ahn, Kyeong-Chan;Park, Jong-Hyun;Ahn, Jun-Ku;Yoon, Soon-Gil
    • Transactions on Electrical and Electronic Materials
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    • v.8 no.2
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    • pp.84-88
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    • 2007
  • [ $Bi_{1.5}Zn_{1.0}Nb_{1.5}O_7$ ] (BZN), $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN), and $Bi_2Cu_{2/3}Nb_{4/3}O_7$ (BCN) pyrochlore thin films were prepared on $Cu/Ti/SiO_2/Si$ substrates by pulsed laser deposition and the micro-structural and electrical properties were characterized for embedded capacitor applications. The BZN, BMN, and BCN films deposited at $25\;^{\circ}C$ and $150\;^{\circ}C$, respectively show smooth surface morphologies and dielectric constants of about $39\;{\sim}\;58$. The high dielectric loss of the films deposited at $150\;^{\circ}C$ compared with films deposited at $25\;^{\circ}C$ was attributed to the defects existing at interface between the films and copper electrode by an oxidation of copper bottom electrode. The leakage current densities and breakdown voltages in 200 nm thick-BMN and BZN films deposited at $150\;^{\circ}C$ are approximately $2.5\;{\times}\;10^{-8}\;A/cm^2$ at 3 V and above 10 V, respectively. Both BZN and BMN films are considered to be suitable materials for embedded capacitor applications.

Varistor Properties and Aging Behavior of ZnO-V2O5-MnO2-Co3O4-La2O3 Ceramics Modified with Various Additives (Cr, Nb, Dy, Bi)

  • Nahm, Choon-Woo;Lee, Sun-Kwon;Heo, Jae-Seok;Lee, Don-Gyu;Park, Jong-Hyuk;Cho, Han-Goo
    • Transactions on Electrical and Electronic Materials
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    • v.14 no.4
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    • pp.193-198
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    • 2013
  • The effects of additives (Cr, Nb, Dy, and Bi) on microstructure, electrical properties, dielectric characteristics, and aging behavior of $ZnO-V_2O_5-MnO_2-Co_3O_4-La_2O_3$ (ZVMCL) ceramics were systematically investigated. The phase formed in common for all ZVMCL ceramics modified with various additives consisted of ZnO grain as a main phase, and $Zn_3(VO_4)_2$ and $ZnV_2O_4$ as the secondary phases. The sintered density and average grain size were in the range of $5.4-5.54g/cm^3$ and $3.7-5.1{\mu}m$, respectively. The ZVMCL ceramics modified with Cr exhibited the highest breakdown field (6,386 V/cm) and the ZVMCL ceramics modified with Nb exhibited the lowest breakdown field (3,517 V/cm). All additives enhanced the nonlinear coefficient (${\alpha}$), by a small or large margin, in particular, additives such as Bi and Nb noticeably increased the nonlinear coefficient, with ${\alpha}=25.5$ and ${\alpha}=23$, respectively. However, on the whole, all additives did not improve the stability against a DC stress, compared with ZVMCL ceramics.

Dielectric and Piezoelectric Characteristics of Low Temperature Sintering 0.20Pb(Zn1/3Nb2/3)O3-0.80Pb(Zr0.48Ti0.52)O3 Ceramics with the Addition of Sintering Aid ZnO (소결조제 ZnO 첨가에 따른 저온소결 0.20Pb(Zn1/3Nb2/3)O3-0.80Pb(Zr0.48Ti0.52)O3 세라믹스의 유전 및 압전특성)

  • Yoo, Ju-Hyun;Lee, Yu-Hyong;Kim, Do-Hyung;Lee, Il-Ha;Kwon, Jun-Sik;Paik, Dong-Soo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.2
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    • pp.126-130
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    • 2008
  • In this study, in order to develop low loss multilayer piezoelectric actuator, PZN-PZT ceramics were fabricated using $Li_2CO_3,\;Bi_2O_3$, CuO and ZnO as sintering aids, their structural, piezoelectric and dielectric characteristics were investigated according to the amount of ZnO addition, At the sintering temperature of $870^{\circ}C$, the density, electromechanical coupling factor(kp), mechanical quality factor(Qm), dielectric constant(${\epsilon}_r$) and piezoelectric constant($d_{33}$) of 0.4 wt% ZnO added specimen (sintered at $870^{\circ}C$) showed the optimum value of $7.812g/cm^3$, 0.535, 916, 1399, 335 pC/N respectively. Taking into consideration above piezoelectric properties of the specimen sintered at low temperature, it was concluded that PZN-PZT ceramics using 0.4 wt% ZnO as additive showed the optimum characteristics as the composition ceramics for low loss multilayer piezoelectric actuator application.

Effect of Low-Temperature Sintering on Electrical Properties and Aging Behavior of ZVMNBCD Varistor Ceramics

  • Nahm, Choon-Woo
    • Korean Journal of Materials Research
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    • v.30 no.10
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    • pp.502-508
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    • 2020
  • This paper focuses on the electrical properties and stability against DC accelerated aging stress of ZnO-V2O5-MnO2-Nb2O5-Bi2O3-Co3O4-Dy2O3 (ZVMNBCD) varistor ceramics sintered at 850 - 925 ℃. With the increase of sintering temperature, the average grain size increases from 4.4 to 11.8 mm, and the density of the sintered pellets decreases from 5.53 to 5.40 g/㎤ due to the volatility of V2O5, which has a low melting point. The breakdown field abruptly decreases from 8016 to 1,715 V/cm with the increase of the sintering temperature. The maximum non-ohmic coefficient (59) is obtained when the sample is sintered at 875 ℃. The samples sintered at below 900 ℃ exhibit a relatively low leakage current, less than 60 mA/㎠. The apparent dielectric constant increases due to the increase of the average grain size with the increase of the sintering temperature. The change tendency of dissipation factor at 1 kHz according to the sintering temperature coincides with the tendency of the leakage current. In terms of stability, the samples sintered at 900 ℃ exhibit both high non-ohmic coefficient (45) and excellent stability, 0.8% in 𝚫EB/EB and -0.7 % in 𝚫α/α after application of DC accelerated aging stress (0.85 EB/85 ℃/24 h).

Element Dispersion and Wallrock Alteration from Samgwang Deposit (삼광광상의 모암변질과 원소분산)

  • Yoo, Bong-Chul;Lee, Gil-Jae;Lee, Jong-Kil;Ji, Eun-Kyung;Lee, Hyun-Koo
    • Economic and Environmental Geology
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    • v.42 no.3
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    • pp.177-193
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    • 2009
  • The Samgwang deposit consists of eight massive mesothermal quartz veins that filled NE and NW-striking fractures along fault zones in Precambrian granitic gneiss of the Gyeonggi massif. The mineralogy and paragenesis of the veins allow two separate discrete mineralization episodes(stage I=quartz and calcite stage, stage II-calcite stage) to be recognized, temporally separated by a major faulting event. The ore minerals are contained within quartz and calcite associated with fracturing and healing of veins that occurred during both mineralization episodes. The hydrothermal alteration of stage I is sericitization, chloritization, carbonitization, pyritization, silicification and argillization. Sericitic zone occurs near and at quartz vein and include mainly sericite, quartz, and minor illite, carbonates and chlorite. Chloritic zone occurs far from quartz vein and is composed of mainly chlorite, quartz and minor sericite, carbonates and epidote. Fe/(Fe+Mg) ratios of sericite and chlorite range 0.45 to 0.50(0.48$\pm$0.02) and 0.74 to 0.81(0.77$\pm$0.03), and belong to muscovite-petzite series and brunsvigite, respectiveIy. Calculated $Al_{IV}$-FE/(FE+Mg) diagrams of sericite and chlorite suggest that this can be a reliable indicator of alteration temperature in Au-Ag deposits. Calculated activities of chlorite end member are $a3(Fe_5Al_2Si_3O_{10}(OH)_6$=0.0275${\sim}$0.0413, $a2(Mg_5Al_2Si_3O_{10}(OH)_6$=1.18E-10${\sim}$7.79E-7, $a1(Mg_6Si_4O_{10}(OH)_6$=4.92E-10${\sim}$9.29E-7. It suggest that chlorite from the Samgwang deposit is iron-rich chlorite formed due to decreasing temperature from high temperature(T>450$^{\circ}C$). Calculated ${\alpha}Na^+$, ${\alpha}K^+$, ${\alpha}Ca^{2+}$, ${\alpha}Mg^{2+}$ and pH values during wallrock alteration are 0.0476($400^{\circ}C$), 0.0863($350^{\circ}C$), 0.0154($400^{\circ}C$), 0.0231($350^{\circ}C$), 2.42E-11($400^{\circ}C$), 7.07E-10($350^{\circ}C$), 1.59E-12($400^{\circ}C$), 1.77E-11($350^{\circ}C$), 5.4${\sim}$6.4($400^{\circ}C$), 5.3${\sim}$5.7($350^{\circ}C$)respectively. Gain elements(enrichment elements) during wallrock alteration are $TiO_2$, $Fe_2O_3(T)$,CaO, MnO, MgO, As, Ag, Cu, Zn, Ni, Co, W, V, Br, Cs, Rb, Sc, Bi, Nb, Sb, Se, Sn and Lu. Elements(Ag, As, Zn, Sc, Sb, Rb, S, $CO_2$) represents a potential tools for exploration in mesothermal and epithermal gold-silver deposits.