• 자원리싸이클링
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• 제21권5호
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• pp.65-71
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• 2012

용융 PbO-$SiO_2$계 슬래그와 Bi를 $775{\sim}850^{\circ}C$의 마그네시아 도가니 중에서 평형시켜 Pb와 Bi의 평형분배에 대하여 조사하였다. 분위기 중의 산소분압은 $P_{CO2}/P_{CO}$의 비율을 조정하여 제어하였다. Pb의 분배비인 (%PbO)/[%Pb]는 슬래그 중의 $SiO_2$ 농도가 증가함에 따라 증가하였으며, Bi의 분배비인 ($%Bi_2O_3$)/[%Bi]는 슬래그 중의 $SiO_2$ 농도가 증가함에 따라 감소하였다. 그리고 반응 온도가 높을수록 금속 상중의 Pb 농도는 증가하였다. 이러한 결과는 열역학적으로 예측한 결과와 잘 일치하였다.

• 한국재료학회지
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• 제30권2호
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• pp.61-67
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• 2020

BiFeO₃ with perovskite structure is a well-known material that has both ferroelectric and antiferromagnetic properties called multiferroics. However, leaky electrical properties and difficulty of controlling stoichiometry due to Bi volatility and difficulty of obtaining high relative density due to high dependency on the ceramic process are issues for BiFeO₃ applications. In this work we investigated the sintering behavior of samples with different stoichiometries and sintering conditions. To understand the optimum sintering conditions, nonstoichiometric Bi_1±xFeO_3±δ ceramics and Ti-doped Bi_1.03Fe_1-4x/3Ti_xO₃ ceramics were synthesized by a conventional solid-state route. Dense single phase BiFeO₃ ceramics were successfully fabricated using a two-step sintering and quenching process. The effects of Bi volatility on microstructure were determined by Bi-excess and Ti doping. Bi-excess increased grain size, and Ti doping increased sintering temperature and decreased grain size. It should be noted that Ti-doping suppressed Bi volatility and stabilized the BiFeO₃ phase.

• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.738-748
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• 2008

In this study, it has been investigated on the changing behavior of electrical properties in $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0 and 0.5) ceramics. The samples were prepared by conventional ceramic process, and then characterized by I-V, C-V curve plots, impedance and modulus spectroscopy (IS & MS) measurement. The electrical properties of ZBS systems were strongly dependent on Sb/Bi. In ZBS systems, the varistor characteristics were deteriorated noticeably with increasing Sb/Bi and the donor density and interface state density were increased with increasing Sb/Bi. On the other hand, we observed that the grain boundary reacted actively with the ambient oxygen according to Sb/Bi ratio. Especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature. Besides, the increased pyrochlore and $\beta$-spinel phase with Sb/Bi ratio caused the distributional inhomogeneity in the grain boundary barrier height and the temperature instability. To the contrary, the grain boundary layer was relatively homogeneous and more stable to temperature change and kept the system highly nonlinear at high Bi-rich phase contents.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.147-147
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• 2013

Multiferroic material $BiFeO_3$ (BFO) is a typical multiferroic material with a room-temperature magnetoelectric coupling in view of high magnetic- and ferroelectric-ordering temperatures (Neel temperature $T_N$ ~ 647 K and Curie temperature TC ~1,103 K). Rare-earth ion substitution at the Bi sites is very interesting, which induces suppressed volatility of the Bi ion and improved ferroelectric properties. At the same time, the Fe-site substitution with magnetic ions is also attracting, since the enhanced ferromagnetism was reported. In this study, BFO, $Bi_{0.9}Dy_{0.1}FeO_3$ (BDFO), $BiFe_{0.97}Co_{0.03}O_3$ (BFCO) and $Bi_{0.9}Dy_{0.1}Fe_{0.97}Co_{0.03}O_3 $ (BDFCO) compounds were prepared by conventional solid-state reaction and wet-mixing method. High-purity $Bi_2O_3$, $Dy_2O_3$, $Fe_2O_3$ and $Co_3O_4$ powders with the stoichiometric proportions were mixed, and calcined at $500^{\circ}C$ for 24 h. The samples were immediately put into an oven, which was heated up to 800oC and sintered in air for 1 h. The crystalline structure of samples was investigated at room temperature by using a Rigaku Miniflex powder diffractometer. The field-dependent magnetization measurements were performed with a vibrating-sample magnetometer. The electric polarization was measured at room temperature by using a standard ferroelectric tester (RT66B, Radiant Technologies). Dy and Co co-doping at the Bi and the Fe sites induce the enhancement of both magnetic and ferroelectric properties of $BiFeO_3$.

• 한국세라믹학회지
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• 제35권3호
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• pp.245-250
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• 1998

Field emission display (FED) is currently being explored as a potential flat panel display technology. The need of new materials for low voltage blue phosphors for FED focused our attention on the $Y_2O_3-Nb_2O_5$ sys-tem. Yttrium niobate doped with $Bi^{3+}$ was prepared by solid state reaction technique and the optimization of the luminescent properties with a control of $Bi^{3+}$ amounts and Y/Nb ratio was studied. Under 254 nm and low voltage electron excitations $Bi^{3+}-activated$ YNbO4 phosphors showed a strong and relatively narrow blue em-ission band with a range of 420 to 450 nm, Especially 0.4wt% $Bi^{3+}\;doped\;YNbO_4$ phosphors with Y/Nb ratio of 1/1 showed the maximum emission intensity. Under low voltage electron excitation maximum emission in-tensity appeared at the Y/Nb ratio of 0.495/0.505.

• 한국전기전자재료학회논문지
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• 제16권3호
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• pp.195-201
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• 2003

The (Ba,Bi,Sr)TiO$_3$[BBST] thin films were fabricated on Pt/Ti/SiO$_2$ /Si substrate by RF sputtering method. The effects of Ar/O$_2$ ratio on the structural and dielectric properties of BBST thin films were investigated. Increasing the Ar/O$_2$ ratio, the intensity of BaBi$_4$Ti$_4$O$_{15}$ and Bi$_4$Ti$_3$O$_{12}$ peaks were increased but (Ba$_{0.5}$Sr$_{0.5}$)TiO$_3$ peak was decreased. In the BBST thin films deposited with condition of Ar/O$_2$(90/10) ratio, the composition ratio of the Ba, Bi and Sr atoms were 0.35, 0.25 and 0.4 respectively. The Bi and Ti atoms were diffused into the Pt layers. Increasing the Ar/O$_2$ ratio, the dielectric constant of the BBST thin films were increased but the dielectric loss of the BBST thin films were decreased. The dielectric constant and dielectric loss of the BBST deposited at 90/10 of Ar/O$_2$ ratio were 319 and 2.2%. respectively . Increasing the applied voltage, the capacitance of the BBST thin films were decreased.reased.

• 한국자기학회지
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• 제20권6호
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• pp.222-227
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• 2010

RF 마그네트론 스퍼터링법을 이용하여 Pt/Ti/$SiO_2$/Si(100) 기판위에 $BiFeO_3$ 박막을 증착하였고, 스퍼터링 공정에서 산소량이 $BiFeO_3$ 박막에 미치는 영향을 조사하였다. $BiFeO_3$ 박막은 XRD 회절패턴의 결과를 통하여 소량의 불순물상이 존재하는 페로브스카이트 구조로 결정화되었다. $O_2$ 가스의 유량은 박막의 미세구조 및 자기적 특성에 많은 영향을 끼친다. $O_2$ 가스의 유량이 증가함에 따라 박막의 표면 거칠기 및 grain size가 증가하였다. $BiFeO_3$ 박막은 상온에서 약자성적인 거동을 보였으며, PFM 측정을 통하여 박막의 미세구조와 압전계수와의 상관관계를 조사하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.245-245
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• 2011

$BiFeO_3$ (BFO)박막에 전위금속 Pb와 Co를 각각 치환환 박막을 chemical solution deposition 방법으로 Pt/Ti/SiO2/Si(100) 기판위에 증착하였다. Bi 자리에 Pb와 Co를 20 at.% 치환하였으며, 치환된 $Bi_{0.8}Pb_{0.2}FeO_3$ (BPFO), $Bi_{0.8}Co_{0.2}FeO_3$ (BCFO) 박막의 구조적, 자기적 특성 변화를 BFO 박막과 비교하여 조사하였다. XRD 패턴을 분석한 결과 BPFO, BCFO 박막들은 모두 rhombohedrally distorted perovskite 구조였으며 불순물인 pyrochlore 상이 약하게 관측되었다. 치환이 이루어진 BPFO, BCFO 박막들의 자기 이력곡선은 안정된 포화곡선을 나타냈으며 BFO의 포화값(5 emu/$cm^3$)에 비해 크게 증가된 55 emu/$cm^3$, 35 emu/$cm^3$의 값을 나타냈다. 또한 보자력장(coercive field, Hc)값도 BFO의 500 Oe보다 크게 증가된 1,200 Oe, 800 Oe의 값을 보였다.

• 한국결정학회지
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• 제9권1호
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• pp.30-38
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• 1998

주파수 무게센서를 장착한 자동직경제어 방식에 의해 Bi12GeO20 단결정을 쵸크랄스키법으로 육성하였다. 회전속도에 따른 계면모양의 변화를 관찰하기 위해, 회전속도를 변화시키면서 육성한 결과, 23-21rpm에서 평평한 계면이 형성되었다. Bi2O3의 휘발에 의한 화학 양론적 조성으로부터 이탈에 따른 Bi4Ge3O12의 생성과 이로 인한 색 변화를 관찰하기 위해, Bi2O3의 함량을 0.1-1mol% 보충한 결과, 0.3mol% 증발 보상을 하였을 때, 내포물이 적은 연한 갈색의 광학용 단결정을 육성할 수 있었다. 이러한 성장조건 하에서 직경 25mm x 길이 70mm 인 거의 일정한 직경을 갖는 단결정이 육성되었고 결함밀도는 103개/cm2를 나타내었다. XRD및 TEM에 의해 단결정의 우선 성장방향을 측정한 결과<110>이었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.14-14
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• 2009

In this study, we investigated the effects of Cr dopant on the bulk trap level and grain boundary characteristics of $Bi_2O_3$-based ZnO (ZB) using dielectric functions such as $Z^*$, $Y^*$, $M^*$, ${\varepsilon}^*$, and $tan{\delta}$. More than two bulk traps of $Zn_i$ and $V_o$ probably in different ionization states could be identified in ZBCr($ZnO-Bi_2O_3-Cr_2O_3$). The grain boundaries of ZBCr could be electrochemically divided into two types: sensitive to ambient oxygen and thus electrically active one and oxygen-insensitive and thus electrically inactive one.