• 환경위생공학
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• 제12권1호
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• pp.25-37
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• 1997

The synthesis of high purity and ultra-fine $BaTiO_{3}$ by precipitation with gaseous $NH_{3}$ as precipitator was investigated to find an alternative process to solve various problems of present wet methods. This study consisted of two parts ; synthesis of $BaTiO_{3}$ precipitation with gaseous $NH_{3}$ and test of electrical property for the $La_{2}O_{3}$ doped $BaTiO_{3}$. The proper condition for the synthesis of $BaTiO_{3}$ by precipitation with gaseous $NH_{3}$ is as follows. The pH was 9.0. $H_{2}O_{2}$ mole ratio to $TiCl_{4}$ was 10. $NH_{3}$ gas follow rate did not influence the synthesis of $BaTiO_{3}$. The calcination temperature of $BaTiO_{3}$ was $300^{\circ}C$. Also, the synthesis of $La_{2}O_{3}$-doped $BaTiO_{3}$ was tested through the wet process. Under these condition, the shape of prepared $BaTiO_{3}$ powder was spherical type and the size of that was about $0.2{\mu}m$. After the powder was pressed, this green body was sintered at the $1300^{\circ}C$. Under these conditions, the water absorptance and the density of the obtained sintered body were below 0.04 %, 5.2 g/$cm^{3}$, respectively. Also the grain size of that was about $10{\mu}m$ and it was similar to commercial product.

• 공업화학
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• 제9권6호
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• pp.817-821
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• 1998

$Ba(OH)_2{\cdot}8H_2O$와 $Ti(OC_2H_5)O_4$를 사용하여 고순도 $BaTiO_3$ 분말을 수열 합성법으로 제조하고 열처리 온도에 따른 분말 특성을 조사하였다. 이때 제조된 분말 내에는 미량의 $H_2O$ 및 $OH^-$가 존재함을 확인할 수 있었으며 열처리 온도가 $200^{\circ}C$에서 $1000^{\circ}C$로 증가할수록 $BaTiO_3$의 평균입경은 $0.022{\mu}m$에서 $0.072{\mu}m$로 증가되었고 tetrogonality(c/a)도 1.02에서 1.2로 증가되어 정방정 형태로 상전이가 나타났다. 또한 $400^{\circ}C$로 3시간 동안 열처리한 후 이들 분말들을 $1250^{\circ}C$로 소결할 때 8120의 비유전율값이 얻어졌으며 표면 활성화 에너지값은 9680 kcal/mol이었다.

• 한국세라믹학회지
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• 제12권2호
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• pp.10-14
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• 1975

Bodies whose compositions are in the ternary system BaCO3-TiO2-SnO2 containing from 5 to 90 mol % stannic oxide were prepared to improve the thermal characteristics of barium titanate dielectrics. Bodies having dielectric constant (K) of 2100 at 1 KHz, low negative temperature coefficients of 1500ppm up to about 9$0^{\circ}C$, Curie Temperature of 2$0^{\circ}C$, and dissipation factor of 0.2-0.4% were obtained with addition of 15 mole % stannic oxide.

• 한국전기전자재료학회논문지
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• 제24권4호
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• pp.276-279
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• 2011

This work, the etching characteristics of $Ba_2Ti_9O_{20}$(BTO) thin films were investigated using an inductively coupled plasma (ICP) of $Ar/Cl_2$ gas mixture. The etch rate of BTO thin films as well as the $BTO/SiO_2$ and BTO/PR etch selectivity were measured as functions of $Ar/Cl_2$ mixing ratio (0~100% Ar) at a constants gas pressure (6 mTorr), total gas flow rate (50 sccm), input power (700 W) and bias power (200 W). The etch rate of BTO thin films decreased with increasing Ar fraction. To analyze the etching mechanism an optical emission spectroscopy (OES), double Langmuir probe(DLP) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out.

• 전자공학회논문지A
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• 제31A권9호
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• pp.121-127
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• 1994

The capability for application of rf magnetron sputterred and post annealed BaTiO$_{3}$ thin films in dielectrics AC drived TFELD(thin film electroluminescent device) was investigated. The dielectric constant of the thin films slightly increased up to about 25 with increase fothe post annealing temperature in the range of 210$^{\circ}C$-480$^{\circ}C$. The dielectric loss was about 0.005-0.01 except for the high frequency range above 100kHz and nearly independent on post annealing temperature. The BaTiO$_{3}$ thin film used for TFELD was annealed at 480.deg. C and Si$_{3}$N$_{4}$ thin film was inserted between BaTiO$_{3}$, lower dielecrics and ZnS:Mn, phosphor layer for stable driving of the device and for fear of interdiffusion. Regardless of the frequency of the applied sine wave voltage, the threshold voltage of the prepared TFELD was 65volt and saturated brightness was about 3000cd/m$^{2}$ at 130volt(2kHz sine wave), 65volt above V$_{TH}$.

• 한국재료학회지
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• 제4권1호
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• pp.3-8
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• 1994

최근 중요하게 된 진동 흡수를 위해서 $BaTiO_{3}$ 세라믹의 흡진 특성을 측정하고 미세구조와의 연관을 조사했다.$BaTiO_{3}$ 세라믹은 비교적 물리적 화학적으로 안정하여 좋은 흡진재로 기대된다.BaTiO$_{3}$ 세라믹은 흡진 특성을 강화시키기 위해서 섬유상 분말을 소결하여 만들었다. KDC법으로 직경이 0.2$\mu\textrm{m}$, 1.2$\mu\textrm{m}$, 2.0$\mu\textrm{m}$인 각각 다른 섬유상 $K_2Ti_4O_9$을 만들고 이온교환해서 섬유상 $BaTiO_{3}$ 을 만들었다. 면상으로 배향시킨 소결체의 흡진 특성과 전기적 물성을 조사하여 미세구조와 의 관계를 밝혔다. 소결체의 입경과 등가회로, 전기기계합계수($K_{t}$), 발생 전압(V)을 조사한 결과, 사용한 섬유의 직경이 클수록 소결체의 입경은 작아졌다. 따라서 입계가 많아졌다. 흡진 특성은 입계가 많을수록 커진다. 즉 입계의 내무마찰이 클수록 흡진률은 커지며 이때의 내부마찰은 등가회로를 조사함으로써 확인되었다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2005년도 ISMP
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• pp.201-212
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• 2005

[ $Epoxy/BaTiO_3$ ] composite embedded capacitor films (ECFs) were newly designed fur high dielectric constant and low tolerance (less than ${\pm}15\%$) embedded capacitor fabrication for organic substrates. In terms of material formulation, ECFs are composed of specially formulated epoxy resin and latent curing agent, and in terms of coating process, a comma roll coating method is used for uniform film thickness in large area. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ composite ECF is measured with MIM capacitor at 100 kHz using LCR meter. Dielectric constant of $BaTiO_3$ ECF is bigger than that of $SrTiO_3$ ECF, and it is due to difference of permittivity of $BaTiO_3\;and\;SrTiO_3$ particles. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ ECF in high frequency range $(0.5\~10GHz)$ is measured using cavity resonance method. In order to estimate dielectric constant, the reflection coefficient is measured with a network analyzer. Dielectric constant is calculated by observing the frequencies of the resonant cavity modes. About both powders, calculated dielectric constants in this frequency range are about 3/4 of the dielectric constants at 1 MHz. This difference is due to the decrease of the dielectric constant of epoxy matrix. For $BaTiO_3$ ECF, there is the dielectric relaxation at $5\~9GHz$. It is due to changing of polarization mode of $BaTiO_3$ powder. In the case of $SrTiO_3$ ECF, there is no relaxation up to 10GHz. Alternative material for embedded capacitor fabrication is $epoxy/BaTiO_3$ composite embedded capacitor paste (ECP). It uses similar materials formulation like ECF and a screen printing method for film coating. The screen printing method has the advantage of forming capacitor partially in desired part. But the screen printing makes surface irregularity during mask peel-off, Surface flatness is significantly improved by adding some additives and by applying pressure during curing. As a result, dielectric layer with improved thickness uniformity is successfully demonstrated. Using $epoxy/BaTiO_3$ composite ECP, dielectric constant of 63 and specific capacitance of 5.1nF/cm2 were achieved.

• 한국재료학회지
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• 제18권2호
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• pp.107-111
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• 2008

[ $BaO{\cdot}Nd_2O_3{\cdot}5TiO_2$ ] (BNT) ceramics modified with a borate glass containing Ba, Nd and Ti as glass constituents were investigated with regard to their sintering behavior and microwave dielectric properties. An addition of iso-component glass significantly improved the sinterabilty of the BNT ceramics and lowered the sintering temperature. A maximum density of $5.29\;g/cm^3$ and an x-y shrinkage of 17% were obtained for BNT ceramics containing 10wt.% of the glass sintered at $1100^{\circ}C$. The dielectric composition without the glass additive was only slightly densified at $1100^{\circ}C$. The resulting sample exhibited two crystalline phases, $BaNd_2Ti_5O_{14}$ and $Ba_2Ti_9O_{20}$, regardless of sintering temperature and glass content. When >10wt.% glass was added, exaggerated grain growth with a less uniform microstructure was found, resulting in the subsequent reduction of the fired density and the dielectric properties. BNT ceramics containing 10wt.% of the isocomponent glass sintered at $1100^{\circ}C$ for 4 h showed promising dielectric properties of k = 71.3 and Q = 1,330.

• 전기학회논문지
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• 제56권9호
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• pp.1609-1613
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• 2007

(Ba,Sr,Ca)$TiO_3$ powders, which were prepared by sol-gel method using a solution of Ba-, Sr- and Ca-acetate and Ti iso-propoxide, were mixed with organic vehicle and the BSCT thick films were fabricated by the screen-printing techniques on high purity alumina substrates. The structural and dielectirc properties were investigated for various $Dy_2O_3$ doping contents. As a result of thermal analysis, the exothermic peak was observed at around 670^{\circ}C $ due to the formation of the polycrystalline perovskite phase. All BSCT thick films, sintered at $1420^{\circ}C$ for 2h, showed the typical XRD patterns of perovskite polycrystalline structure and no pyrochlore phase was observed. The average grain size of the specimens decreased with increasing amount of $Dy_2O_3$. The average grain size and thickness of the BSCT specimens doped with 0.1 mol% $Dy_2O_3$ were approximately $1.9{\mu}m$ and $70{\mu}m$, respectively. The relative dielectric constant decreased and dielectric loss increased with increasing amount of $Dy_2O_3$, the values of the BSCT thick films doped with 0.1 mol% $Dy_2O_3$ were 3697 and 0.4% at 1 kHz, respectively. The leakage current densities in all BSCT thick films were less than $10^{-9}A/cm^2$ at the applied electric field range of 0-20 kV/cm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 일렉트렛트 및 응용기술
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• pp.79-82
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• 2002

$(Ba_{0.6-x}Sr_{0.4}Ca_x)TiO_3$ + ywt% MgO (x=0.10, 0.15, 0.20, y=0.0~3.0) ceramics were fabricated by the conventional solid-state reaction, and their structural and dielectric properties were investigated with variation of composition ratio and MgO doping content. A second phase, representative of MgO, appears in 3wt% MgO-doped BSCT specimens. Average grain sizes decreased with increasing amounts of MgO, and the BSCT(40/40/20) specimens doped with 3wt% MgO showed a value of $9.3{\mu}m$. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing MgO doping content and Ca composition ratio. The relative dielectric constant was non-linearly decreased as the field strength is increased. The tunability was increased with decreasing a Ca content and the BSCT(50/40/10) specimen doped with 1.0wt% MgO content showed the highest value of 6.4% at 5kV/cm.