• Resources Recycling
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• v.25 no.3
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• pp.49-54
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• 2016

In this study, zircon sand is separated into zirconia and silica by using the Ar-$H_2$ arc plasma refining. And then silica is removed from it by the microwave leaching method to produce a high pure zirconia. Plasma melting consist of two sequential processes; reduction process with Ar gas only followed by refining process with Ar-$H_2$ gas. After cooling in chamber. The solid phase obtained at $240^{\circ}C$ were found to be composed of 20% sulfuric acid solution. The solution was used as a leaching solution with microwave irradiation to obtain a high purity zirconia.

• Journal of the Semiconductor & Display Technology
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• v.11 no.4
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• pp.19-23
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• 2012

We report microbolometer characteristic with n-type and p-type amorphous silicon thin film. The n-type and p-type amorphous silicon thin films were made by PECVD. The electrical properties of n-type and p-type a-Si:H thin films were investigated as a function of doping gas flow rate. The doping gas used $B_2H_6/Ar$ (1:9) and $PH_3/Ar$ (1:9). In general, the conductivity of doping a-Si:H thin films increased as doping gas increase but the conductivity of a-Si:H thin films decreased as the doping gas increase because doping gas concentration increase led to dilution gas (Ar) increase as the same time. We fabricated an amorphous silicon microbolometer using surface micromachining technology. The fabricated microbolometer had a negative TCR of 2.3%. The p-type microbolometer had responsivity of $5{\times}10^4V/W$ and high detectivity of $3{\times}10^8cm(Hz)^{1/2}/W$. The p-type microbolometer had more detectivity than n-type for less noise value.

• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.139-144
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• 2004

Recently, the importance of clean vacuum and partial pressure measurement of gas species has been increased in the vaccum process. In this study, the partial pressures of $H_2$, He, C, N, $O_2$, $H_2O $, Ar/2, $N_2$(CO), Ar, $CO_2$ were measured by residual gas analyzer according to temperature of cryogenic pump which is used to clean vacuum generation and compared. The experimental results showed that the cryopanel temperature was reached to 12K after 72 minutes of pumping and after 25hours, the partial pressures in percent were 24.9 %, 6.6%, 5.5 %, 2.2 %, 3.8%, 30.7%, 6.5%, 6.1 %, 5.5%, 8.2% for $H_2$, He, C, N, $O_2$, $H_2O $, Ar/2, $N_2$, Ar, $CO_2$ respectively. The dominant gases were $H_2$ and $H_2O $, and the partial pressures were relatively high compare to other gases.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.8
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• pp.438-444
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• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.59 no.4
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• pp.417-422
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• 2010

Atmosphere Plasma of Gas Discharge (APGD) has been used in plasma sources for material processing such as etching, deposition, surface modification and so on due to having no thermal damages. The APGD researches on AC source with high frequency have been mainly processed. However, DC APGD studies have been not. In order to understand APGD further, it is necessary to study on fundamental properties of DC APGD. In this paper, we developed a one-dimensional fluid simulation model with capacitively coupled plasma chamber at the atmosphere pressure (760 [Torr]). Nine kinds of Ar discharge particles such as electron (e), positive ions ($Ar^+$, $Ar_2^+$) and neutral particles ($Ar_m^*$, $Ar_r^*$, $Ar_h^*$, $Ar_2^*$(1), $Ar_2^*$(3) and Ar gas) are considered in the computation. The simulation was worked at the current range of 1~15 [mA]. The characteristics of voltage-current were calculated and the structure of Joule heating were discussed. The spatial distributions of Ar DC APGD and the mechanism of power consumption were also investigated.

• Resources Recycling
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• v.20 no.4
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• pp.71-77
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• 2011

$MoO_3$ powders were reduced to $MoO_2$ under Ar+$H_2$ gas mixture in a tubular furnace at temperature range 723~873 K. Reaction rate was quantitatively deduced by measuring relative humidity of off gas. Observed reaction rate increased significantly with hydrogen partial pressure and reaction temperature and the rate of $H_2O$ evolution increased drastically during the initial period of reduction. As reduction proceeded, however, $H_2O$ partial pressure decreased noticeably. During the initial period of the reduction, a linear relationship for time dependence of the reduction fraction was observed. The activation energy for the reduction of $MoO_3$ to $MoO_2$was 73.56 kJ/mol during the initial period of reduction.

• Bulletin of the Korean Chemical Society
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• v.25 no.1
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• pp.73-78
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• 2004

A highly sensitive detecting method has been developed for determining part per billion of sulfur in $H_2S$/Ar plasma. The method is based on the excitation of Ar/$H_2S\;or\;Ar/H_2S/O_2$ mixture in hollow cathode glow discharge sustained by radiofrequency (RF) or 60 Hz AC power and the spectroscopic measurement of the intensity of emission lines from electronically excited $S_2^*\;or\;SO_2^*$ species, respectively. The RF or AC power needed for the excitation did not exceed 30 W at a gas pressure maintained at several mbar. The emission intensity from the $SO_2^*$ species showed excellent linear response to the sulfur concentration ranging from 5 ppbv, which correspond to S/N = 5, to 500 ppbv. But the intensity from the $S_2^*$ species showed a linear response to the $H_2S$ only at low flow rate under 20 sccm (mL/min) of the sample gas. Separate experiments using $SO_2$ gas as the source of sulfur demonstrated that the presence of $O_2$ in the argon plasma is essential for obtaining prominent $SO_2^*$ emission lines.

• Journal of Powder Materials
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• v.19 no.2
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• pp.110-116
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• 2012

This study investigated the effects of annealing environment for the densification and purification properties of pure titanium coating layer manufactured by cold spraying. The annealing was conducted at $600^{\circ}C$/1 h and three kinds of environments of vacuum, Ar gas, and $5%H_2+Ar$ mixture gas were controlled. Cold sprayed Ti coating layer (as sprayed) represented 6.7% of porosity and 228 HV of hardness, showing elongated particle shapes (severe plastic deformation) perpendicular to injection direction. Regardless of gas environments, all thermally heat treated coating layers consisted of pure ${\alpha}$-Ti and minimal oxide. Vacuum environment during heat treatment represented superior densification properties (3.8% porosity, 156.7 HV) to those of Ar gas (5.3%, 144.5 HV) and $5%H_2+Ar$ mixture gas (5.5%, 153.1 HV). From the results of phase analysis (XRD, EPMA, SEM, EDS), it was found that the vacuum environment during heat treatment could be effective for reducing oxide contents (purification) in the Ti coating layer. The characteristic of microstructural evolution with heat treatment was found to be different at three different gas environments. The controlling method for improving densification and purification in the cold sprayed Ti coating material was also discussed.

• Elastomers and Composites
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• v.34 no.2
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• pp.128-134
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• 1999

Steel tire cords were coated via RF plasma polymerization of acetylene and butadiene gas in order to enhance adhesion to rubber compounds. Adhesion of tire cords was measured by TCAT and T-test as a function of type of gas, plasma powder, treatment time, gas pressure and Ar gas etching. Some samples were subjected to aging study in distilled water at $80^{\circ}C$ for a period of 7 days. After testing, tire cords were analysed by SEM to elucidate the adhesion mechanism. The highest adhesion values were obtained at 20W, 2min and 25mtorr for acetylene plasma polymerization, and l0W, 4min, 25mtorr for butadiene plasma polymerization. However, Ar plasma etching did not affect adhesion, while the adhesion of tire cords increased rather than decreased, contrary to expectations. It was not possible to elucidate failure mode by SEM, owing to the rough surface of the tire and the thin plasma polymer coating layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.362-362
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• 2009

$MgB_2$ bulk samples were sintered at different ambient. In this work, high purity Ar gas was added with oxygen and hydrogen gas, which can be regarded as impurity in a sense, as a possible dopant in the $MgB_2$. It was found that oxygen in the sintering ambient leads to a decrease in the critical current density $J_c$ at self field and lower fields. However, we can obtained higher $J_c$ at higher fields. It was also noted that $MgB_2$ samples sintered with 5% hydrogen in Ar revealed the increased $J_c$ at all fields compared to those processed in pure Ar ambient. From the XRD and FESEM analysis, the impurity gas in Ar can refine the $MgB_2$ grain size and result in increased grain. boundary, which can act as a strong flux pinning sites in $MgB_2$ samples. Also discussed are the effects of sintering ambient on irreversibility field, $H_{irr}$ and the upper critical field, $H_{C2}$.