• Journal of Information Display
• /
• 제2권4호
• /
• pp.29-33
• /
• 2001

The luminance and discharge characteristics of an AC PDP may be significantly affected by a small amount of impurity gas in working gas. Impurity gases such as $O_2$, O , C and $H_2$ can be mixed in the manufacturing and lor discharge processes. In this paper, a small amount of impurity gas in AC PDP are introduced intertimally and the relationship between the amount of impurity gas and the luminance/discharge characteristics are investigated. The luminous efficiency decreased seriously with the increase in the partial pressure of impurity gases, especially in $H_2$, $O_2$ and $CO_2$, Under the condition of the impurity gas ratio of 2x $10^{-3}$ for Ar, $N_2$, $H_2$, $CO_2$ and $O_2$, the luminous efficiency decreased to about 8%, 8%, 32%, 36% and 50%, respectively.

• Transactions on Electrical and Electronic Materials
• /
• 제12권3호
• /
• pp.106-109
• /
• 2011

We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

• 한국진공학회지
• /
• 제11권1호
• /
• pp.1-7
• /
• 2002

RF Magnetron Sputtering 방법으로 $Ba_{0.5}Sr_{0.5}TiO_3$ 박막을 Pt/Ti/$SiO_2$/Si 기판위에 증착하였다. $Ba_{0.5}Sr_{0.5}TiO_3$ 박막 증착시 기판온도는 실온으로 고정시켜주었고, 작업 가스 유량(Ar:$O_2$)과 RF Power는 각각 90:10에서 60:40까지 그리고 50 W와 75 W로 하였다. 또한 박막 증착 후 RTA(Rapid Thermal Annealing)를 이용하여 산소분위기에서 $600^{\circ}C$로 고온 순간 열처리를 하였다. 커패시터 제작을 위해 UHV System의 E-beam evaporator를 이용하여 Pt를 증착하였다. XRD 측정을 통한 구조적 특성에서는 작업 가스 유량과 RF Power에 비해 고온 순간 열처리가 결정화에 기여도가 큼을 확인할 수 있었다. 전기적 특성에서는 RF Power가 50 W이고 열처리를 한 샘플에서 비교적 우수한 특성을 보여주었다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
• /
• pp.18-19
• /
• 2006

The bismuth zinc niobate(BZN) pyrochlore thin films were fabricated on Pt(111)/Ti/$SiO_2$/p-Si(100) substrates using a reactive rf magnetron sputtering method at the conditions of working gas ratio Ar:$O_2$=90:10, substrate temperate $R.T{\sim}600^{\circ}C$, rf power 50 W. The dielectric constant, tunability, leakage current density and crystallinity of thin films changed with a substrate temperate. The BZN pyrochlore thin films sputtered with a substrate temperature of $600^{\circ}C$ and RTA at $800^{\circ}C$ showed a leakage current density lower than $10^{-8}\;A/cm^2$ at the range of ${\pm}300\;kV/cm$.

• 반도체디스플레이기술학회지
• /
• 제20권2호
• /
• pp.82-86
• /
• 2021

In this study, we investigated the oxygen partial pressure effect of ITO films for electrodes of oxide-based Thin-Film Transistor (TFT). Firstly, we deposited single ITO films on the glass substrate at room temperature. ITO films were prepared at the various partial pressures of oxygen gas 0-7.4% (O₂/(Ar+O₂)). As increasing oxygen on the process of film deposition, electrical properties were improved and optical transmittance increased in the visible light range (300-800 nm). For the electrode of TFT, we fabricated a TFT device (W/L=1000/200 ㎛) with ITO films as the source and drain electrode on the silicon wafer. Except for the TFT device combined with ITO film prepared at the oxygen partial pressure ratio of 7.4%, We confirmed that TFT devices with ITO films via FTS system operated as a driving device at threshold voltage (V_th) of 4V.

• Progress in Superconductivity
• /
• 제1권2호
• /
• pp.146-150
• /
• 2000

Step edge Josephson junctions in c-axis oriented $YBa_2Cu_3O_7$ films were fabricated on $CeO_2$ buffered sapphire substrates. The step angle was controlled in the wide range of $20^{\circ}\sim75^{\circ}$ by the Ar ion milling technique. I-V curves of junction fabricated on the thickness ratio of $\sim$0.8 and the step angle of $35^{\circ}$ were exhibited RSJ-like behavior with $I_CR_N$ product of $\sim250{\mu}A$ and critical current density of $\sim2\times10^4A/cm^2$ at 77 K. Critical current of step edge junction was increased linearly with decreasing temperature but the normal resistance was almost constant. Total samples of step edge Josephson junction was satisfied a scaling behavior of $I_CR_N{\propto}(J_C)^{0.5}$.

• 한국수소및신에너지학회논문집
• /
• 제26권5호
• /
• pp.402-408
• /
• 2015

In D-T fusion reaction, $D_2$ (duterium) and $T_2$(tritium) are used as fuel gas. The exhaust gas of nuclear fusion includes hydrogen isotopes $Q_2$ (Q means H, D or T), tritiated components ($CQ_4$ and $Q_2O$), CO, $CO_2$, etc. All of hydrogen isotopes should be recovered before released to the atmosphere. This study focused on the recovery of hydrogen isotopes from $CQ_4$ and $Q_2O$. Two kinds of experiments were conducted to investigate the catalytic reaction characteristics of SMR (Steam Methane Reforming) and WGS (Water Gas Shift) reactions using Pt catalyst. First test was performed to convert $CH_4$ into $H_2$ using 6% $CH_4$, 6% CO/Ar feed gas. In the other test, 100% CO gas was used to convert $H_2O$ into $H_2$ at various reaction conditions (reaction temperature, S/C ratio, GHSV). As a result of the first test, $CH_4$ and CO conversion were 41.6%, 57.8% respectively at $600^{\circ}C$, S/C ratio 3, GHSV $2000hr^{-1}$. And CO conversion was 72% at $400^{\circ}C$, S/C ratio 0.95, GHSV $333hr^{-1}$ in the second test.

• 자원리싸이클링
• /
• 제2권4호
• /
• pp.17-22
• /
• 1993

왕겨와 활성탄을 출발물질로 하여 탄소열 환원법으로 SiC 휘스커를 합성하였다. 그리고, 이에 있어서 가수와 첨가제의 영향을 조사하였다. 실험온도는 $1450^{\circ}C$ 이었고 합성도니 SiC 휘스커는 후처리 후 SEM, XRD 분석을 행하였다. 반응관내에 수소의 농도가 높을수록, 총유량이 클수록 휘스커의 생성율이 증가하였으며 가스의 유속이 Ar : $H_2$=300:45(cc/min)이고 NaF : $CaF_2$= 1:1가 되도록 혼합하여, 첨가하고, Ni를 flake ($1{\times}1$mm)로 첨가한 경우에 가장 양호한 형태의 휘스커를 얻을 수 있었다.

• 한국세라믹학회지
• /
• 제42권4호
• /
• pp.232-236
• /
• 2005

$LiNbO_{3}$ optical waveguide 구조를 neutral loop discharge plasma 방법으로 식각시 As과 $C\_{3}F_{8}$가 혼합된 가스 유량에 따른 식각속도와 표면조도 값의 특성을 관찰하였다. 식각 후 식각속도와 식각단면은 scanning electron microscopy로 비교 분석하였으며, 표면조도는 atomic force microscopy로 측정하였다. Ar과 $C_{3}F_{8}$가 혼합된 가스 유량비를 각각 0.1-0.5로 증가시킴에 따라 식각속도와 표면조도는 0.2에서 가장 높게 나타났으며, bias power를 증가함에 따라 300W에서 가장 우수한 식각속도와 가장 평탄한 표면 형상을 얻을 수 있었다.

• 전기화학회지
• /
• 제3권2호
• /
• pp.115-120
• /
• 2000

양극 물질로 산화바나듐 박막, 고체전해질로는 LiPON 박막 그리고 음극 물질로는 리튬 금속 박막을 선택하여 $Li/LiPON/V_2O_5/Pt$ 구조의 전고상 박막 전지를 제작하였고 전지 특성을 평가하였다. 산화바나듐 박막은 여러 산소 분압에서 직류 반응성 스퍼터링으로 증착하여 전기화학적 특성을 분석한 결과 $20\%\;O_2/Ar$비에서 가장 우수한 가역 특성을 나타내었다. 직류 반응성 스퍼터링에 의해 산화바나듐 박막을 제작한 후 진공을 그대로 유지한 상태에서 r.f. 반응성 스퍼터링에 의해 LiPON 고체전해질 박막을 증착하였다. 그 후 dry room내에서 진공 열증착법에 의해 리튬 금속 박막을 증착하여 전고상의 박막 전지를 제작하였다. $Li/LiPON/V_2O_5$ 박막 전지를 전압 범위와 전류 밀도를 변화시켜 충방전 시험을 행한 결과 $7{\mu}A/cm^2$의 전류 밀도와 3.6-2.7 V의 전압범위에서 가장 우수한 가역 특성을 나타내었다. $Li/LiPON/V_2O_5$박막 전지로 초시계를 구동 시켰으며 이는 in-situ공정에 의해 제작된 박막 전지가 소자 에너지원으로의 응용 가능성을 보여 주었다.