• 한국세라믹학회지
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• 제27권4호
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• pp.501-512
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• 1990

Al2O3 and 0.25wt% MgO-doped Al2O3 powders were made from the alcohol solution of Al(NO3)3.9H2O and Mg(NO3)2.6H2O by spray pyrolysis method. Each powder was prepared at 900 and 100$0^{\circ}C$. Powders prepared at 90$0^{\circ}C$ were amorphous phase, but prepared at 100$0^{\circ}C$ wre mainly ${\gamma}$-Al2O3 crystalline form. Particle size of the MgO-doped Al2O3 powders was in the range of 0.2-2${\mu}{\textrm}{m}$, but undooped powders shwoed comparatively wider range of particle size. All the powders prepared at 900 and 100$0^{\circ}C$ were transformed to $\alpha$-Al2O3 crystalline form by calcination at 110$0^{\circ}C$ for 1hr. Each powder was sintered at 1600, 1650 and 1$700^{\circ}C$ for 2hrs. MgO-doped Al2O3 body sintering at 1$650^{\circ}C$ showed 99% of relative density but undooped Al2O3 showed 95% of relative density, even sintered at higher temperature of 1$700^{\circ}C$.

• 한국세라믹학회지
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• 제28권8호
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• pp.593-602
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• 1991

Al2O3 and NiO-doped Al2O3 powders were prepared from the ethanol solution of Al (NO3)3$.$9H2O and Ni(NO3)2$.$6H2O by spray pylolysis method using two-fluid nozzle. As a result of spraying test with 0.3 mol/{{{{ iota }} concentration starting solution, mean droplet sizes varied with 8.99∼9.69$\mu\textrm{m}$ and those standard deviation were 4.57∼5.12. As-prepared powders which were synthesized at 1000$^{\circ}C$ have spherical shape, sizes of 0.1∼3.0$\mu\textrm{m}$ and specific surface area of 22.34∼24.20㎡/g. Most powders consisted of {{{{ gamma }}-Al2O3 phase and transforned into ${\alpha}$-A;2O3 phase by calcination at 1100$^{\circ}C$ for 1 hr. NiO-doped Al2O3 sintered bodies had better sinterability than those of pure Al2O3 and 0.3 wt% NiO-doped Al2O3 had near theoretical density and dense microstructure.

• 한국재료학회지
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• 제5권6호
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• pp.644-649
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• 1995

$UO_2$-6wt%Gd$_2$O$_3$가연성 독물질 소결체에 미량첨가한 Al 화합물(Al(OH)$_3$, ADS(aluminium disterate), Al(OH)$_3$+ADS)이 소결성 및 미세조직에 미치는 영향을 고찰하고자 하였다. 이를 위하여 Al이 첨가된 $UO_2$-6wt%Gd$_2$O$_3$압분체를 1$700^{\circ}C$, 수소 분위기에서 4시간동안 소결한 후 특성시험을 수행하였다 Al을 첨가한 $UO_2$-6wt%Gd$_2$O$_3$의 소결밀도는 94% T.D.이상이였고, ADS를 이용한 Al 첨가가 개기공도 감소에 상대적으로 크게 기여하였다. 또한 Al을 첨가하면 10$\mu\textrm{m}$ 이상의 큰 기공과 1$\mu\textrm{m}$ 이하의 작은 기공은 많이 줄어들었고 첨가된 Al 화합물의 종류와는 무관하게 평균 기공크기는 2-3$\mu\textrm{m}$였다. 그리고 Al을 첨가하지 않은 소결체의 결정립은 이중 결정립 형태를 갖는 반면에 Al을 첨가하면 결정립은 균일하였다. 특히, ADS를 첨가한 소결체의 평균 결정립 크기는 4.6$\mu\textrm{m}$로 가장크게 증가하였다.

• 대한금속재료학회지
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• 제50권11호
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• pp.839-845
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• 2012

The effect of an AlN additive on the thermoelectric properties of SiC ceramics was studied. Porous SiC ceramics with 48-54% relative density were fabricated by sintering the pressed ${\alpha}-SiC$ powder compacts with AlN at $2100-2200^{\circ}C$ for 3 h in an Ar atmosphere. In the undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder. With AlN addition, the reverse phase transformation of 6H-SiC to 4H-SiC was observed during the sintering process. The electrical conductivity of the AlN doped specimen was larger than that of the undoped specimen under the same conditions, which might be due to a reverse phase trans-formation. The Seebeck coefficient of the AlN doped specimen was also larger than that of the undoped specimen. The density of specimen and the amount of addition had significant effects on the thermoelectric properties.

• 한국재료학회지
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• 제8권12호
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• pp.1158-1164
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• 1998

깁사이트를 황산수용액에 용해하여 제조된 황산알루미늄 용액에 에틸알코올을 사용하여 결정을 석출시킨 후 여과, 건조를 통하여 수황산알루미늄 결정 [$Al_2(SO_4)_3$ · $nH_2O$]을 제조하였다. XRD분석 결과 수황산알루미늄에 포함된 결정수는 n=18, 16, 12, 0이었으며, TG분석 결과 평균결정수($n_{av}$)는 14.7이었다. 수황산알루미늄을 열처리한 결과 $800^{\circ}C$에서는 무수황산알루미늄, $900^{\circ}C$와 $1000^{\circ}C$에서는 $\gamma-Al_2O_3$, $1200^{\circ}C$에서는 $\alpha-Al_2O_3$의 생성을 확인할 수 있었다. $\gamma-Al_2O_3$에 니켈피착을 위하여 0.025M농도의 황산알루미늄과 황산니켈을 사용하고 $Ni^{+2}$ 이온과 $Al^{+3}$ 이온의 농도비가 0.5인 혼합용액을 제조한 후 $\gamma-Al_2O_3$ 분말을 혼합하여 슬러리를 제조하였다 제조된 혼합슬러리에 우레아와 $NH_4OH$수용액을 첨가하여 pH를 9.0로 조절하고 $80^{\circ}C$에서 니켈피착을 하였으며, 니켈피착의 진행사항은 ORP(oxidation reduction potential), 전도도 그리고 pH값을 측정하여 관찰하였다. 니켈량에 따른 니켈피착 $\gamma-Al_2O_3$의 특성을 조사하기 위하여 피착된 $\gamma-Al_2O_3$를 $900^{\circ}C$에서 열처리하고 비표면적 변화와 열확산도를 측정하였다. 또한 $1250^{\circ}C$에서 니켈피착 $\gamma-Al_2O_3$의 열안정성은 비표면적과 XRD의 결정상변화로 확인하였다 니켈피착 $\gamma-Al_2O_3$의 표면은 XPS분석으로 Ni $2P_{3/2}$의 화학결합에너지의 변화를 확인한 결과 $NiAl_2O_4$, 상의 화학결합에너지가 증가되었다. 본 연구 결과로 니켈피착 $\gamma-Al_2O_3$가 순수 $\gamma-Al_2O_3$에 비하여 열적 안정성을 지닌 것으로 확인 되었다.

• 한국표면공학회지
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• 제41권4호
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• pp.142-146
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• 2008

Trivalent ions(Ga, Al, In) doped ZnO films were deposited by DC magnetron sputtering on non-alkali glass substrate at substrate temperature of $300^{\circ}C$. We used the different three types of high density($95%{\sim}$) ceramic sintered disks(doped with $Ga_2O_3$; 6.65 wt%, $Al_2O_3$; 3.0 wt%, $In_2O_3$; 9.54 wt%). This study examined the effect of different dopants(Ga, Al, In) on the electrical, structural, and optical properties of the films. The lowest resistivity of $5.14{\times}10^{-4}{\Omega}cm$ and the highest optical band gap of 3.74 eV were obtained by Ga doped ZnO(GZO) film. All the films had a preferred orientation along the(002) direction, indicating that the growth orientation has a c-axis perpendicular to the substrate surface. The average transmittance of the films was more than 85% in the visible range.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권11호
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• pp.550-554
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• 2001

$(Ba_{0.6}Sr_{0.4}Ca_x)TiO_3 + yAl_2O_3$ wt% (x=0.10, 0.15, 0.20, y=0~3.0) ceramics were fabricated by the mixed-oxide method, and their structural and dielectric properties were investigated with variation of composition ratio and $Al_2O_3$ doping content. As results of the X-ray diffraction and microstructure analysis, all BSCT specimens showed dense and homogeneous structure without presence of the second phase. The sintered density was decreased with an increase of $Al_2O_3$ doping content. The Curie temperature and relative dielectric constant at room temperature were decreased with increasing $Al_2O_3$doping content. The dielectric loss is minimum at BSCT doped with 1.5wt% $Al_2O_3$content. The tunability was decreased with increasing an Ca content and the BSCT(50/40/10) specimen doped with 2.0wt% $Al_2O_3$content showed the maximum value of 4.2%.

• 한국세라믹학회지
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• 제28권4호
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• pp.269-278
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• 1991

Fine AlN powder was synthesized by carbothermal reduction and nitridation of alumimun hydroxide prepared from Al-isopropoxide. AlN ceramics with Y2O3 and CaO were prepared by hot-pressing under the pressure of 30 MPa at 180$0^{\circ}C$ for 1 h in N2 atmosphere. Grain boundary behavior and purification mechanism of AlN lattice were examined by heat treatment of AlN ceramics at 185$0^{\circ}C$ for 1-6 h in N2 atmosphere. AlN ceramics without sintering additives showed poor sinterability. However, Y2O3-doped and CaO-doped AlN ceramics were fully densified nearly to theoretical density. As the heat treatment time increased, c-axis lattice parameter increased. This is attributed to the removal of Al2O3 in AlN lattice. This purification effect of AlN attice depended upon the quantity of secondary oxide phase in the inintial stage of heat treatment and the heat treatment time.

• 한국세라믹학회지
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• 제40권10호
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• pp.991-997
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• 2003

SiC세라믹스의 열전변환물성에 미치는 A1$_4$C$_3$ 첨가효과에 대해 연구하였다. $\alpha$-SiC 분말에 A1$_4$C$_3$를 첨가하여 Ar분위기 2100∼220$0^{\circ}C$에서 3시간 소결하여 상대밀도 47∼59%인 다공질 SiC세라믹스를 제조하였다. X-선 회절분석 및 주사형 전자현미경으로 소결체의 상조성과 미세구조를 분석하였으며, A1$_4$C$_3$ 첨가에 의해 6H에서 4H로의 상전이 발생을 관찰할 수 있었다. 전기전도도와 Seebeck 계수를 Ar 분위기 550∼95$0^{\circ}C$에서 측정하였다. 무첨가 시료의 경우 출발원료중에 함유된 p형 불순물(Al, Fe)에 의해 Seebeck 계수가 정(+)의 값을 나타내었으며, 소결온도가 증가함에 따라 전기전도도가 증가하였다. A1$_4$C$_3$ 첨가 시료의 전기전도도는 상전이 및 캐리어농도 증가에 의해 무첨가 시료보다 높았으며, 또 Seebeck 계수도 크게 나타났다. 시료의 밀도, 첨가량 및 소결조건이 열전변환물성에 크게 기여하였다.

• 한국표면공학회지
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• 제42권3호
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• pp.122-127
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• 2009

Ga/Al doped ZnO (GAZO) thin films were prepared on non-alkali glass substrate by co-sputtering system using two DC cathodes equipped with AZO ($Al_2O_3$:2.0 wt%) target and GZO ($Ga_2O_3$:6.65 wt%) target. This study examined the influence of Al/Ga concentration and substrate temperature on the electrical, structural and optical properties of GAZO films. The lowest resistivity $1.95{\times}10^{-3}{\Omega}cm$ was obtained at room temperature. With increasing substrate temperature, resistivity of GAZO film decreased to a minimum value of $7.47{\times}10^{-4}{\Omega}cm$ at below $300^{\circ}C$. Furthermore, when 0.05% $H_2$ gas was introduced, resistivity of GAZO film decreased to $6.69{\times}10^{-4}{\Omega}cm$. All the films had a preferred orientation along the (002) direction, indicating that the deposited films have hexagonal wurtzite structure formed by the textured growth along the c-axis. The average transmittance of the films was more than 85% in the visible light range.