Journal of Surface Science and Engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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Characterization of Ga, Al or In Doped ZnO Films Deposited by DC Magnetron Sputtering

DC 마그네트론 스터링법을 이용하여 증착한 Ga, Al, In 첨가 ZnO 박막의 특성

  • Park, Sang-Eun (Department of Materials Science and Engineering, Pusan National University) ;
  • Park, Se-Hun (Department of Materials Science and Engineering, Pusan National University) ;
  • Jie, Lue (Department of Materials Science and Engineering, Pusan National University) ;
  • Song, Pung-Keun (Department of Materials Science and Engineering, Pusan National University)
  • Published : 2008.08.31
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Abstract

Trivalent ions(Ga, Al, In) doped ZnO films were deposited by DC magnetron sputtering on non-alkali glass substrate at substrate temperature of $300^{\circ}C$. We used the different three types of high density($95%{\sim}$) ceramic sintered disks(doped with $Ga_2O_3$; 6.65 wt%, $Al_2O_3$; 3.0 wt%, $In_2O_3$; 9.54 wt%). This study examined the effect of different dopants(Ga, Al, In) on the electrical, structural, and optical properties of the films. The lowest resistivity of $5.14{\times}10^{-4}{\Omega}cm$ and the highest optical band gap of 3.74 eV were obtained by Ga doped ZnO(GZO) film. All the films had a preferred orientation along the(002) direction, indicating that the growth orientation has a c-axis perpendicular to the substrate surface. The average transmittance of the films was more than 85% in the visible range.

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