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http://dx.doi.org/10.5695/JKISE.2009.42.3.122

Electrical and Structural Properties of GAZO Films Deposited by DC Magnetron Co-sputtering System with Two Cathodes  

Jie, Luo (Department of Materials Science and Engineering, Pusan National University)
Park, Se-Hun (Department of Materials Science and Engineering, Pusan National University)
Song, Pung-Keun (Department of Materials Science and Engineering, Pusan National University)
Publication Information
Journal of the Korean institute of surface engineering / v.42, no.3, 2009 , pp. 122-127 More about this Journal
Abstract
Ga/Al doped ZnO (GAZO) thin films were prepared on non-alkali glass substrate by co-sputtering system using two DC cathodes equipped with AZO ($Al_2O_3$:2.0 wt%) target and GZO ($Ga_2O_3$:6.65 wt%) target. This study examined the influence of Al/Ga concentration and substrate temperature on the electrical, structural and optical properties of GAZO films. The lowest resistivity $1.95{\times}10^{-3}{\Omega}cm$ was obtained at room temperature. With increasing substrate temperature, resistivity of GAZO film decreased to a minimum value of $7.47{\times}10^{-4}{\Omega}cm$ at below $300^{\circ}C$. Furthermore, when 0.05% $H_2$ gas was introduced, resistivity of GAZO film decreased to $6.69{\times}10^{-4}{\Omega}cm$. All the films had a preferred orientation along the (002) direction, indicating that the deposited films have hexagonal wurtzite structure formed by the textured growth along the c-axis. The average transmittance of the films was more than 85% in the visible light range.
Keywords
Al doped ZnO; Ga doped ZnO; Ga/Al co-doped ZnO; Co-sputtering;
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