• Journal of the Korean Ceramic Society
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• v.19 no.4
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• pp.275-280
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• 1982

This study was carried out to research the change of mineral phases and the characteristics (apparent specific gravity, water absorption, firing shrinkage and thermal expansion etc) of the sintered bodies composed of larnite, wollastonite and anorthite etc. in $CaO-Al_2O_3-SiO_2$ system. Test bodies were composed of the same theoretical composition as it of anorthite and fired up to $1450^{\circ}C$. Investigated the change and micro-structure of the mineral phases by XRD and SEM, the characteristics of the sintered bodies by DTA/TGA and etc. The results were as follows. 1. The sintering temperature had a higher about $60^{\circ}C$ than that of $CaO-SiO_2$ system because of coexisting $Al_2O_3$. 2. The formation and transition temperature of $\beta$-wol lastonite and $\alpha$-wollastonite were similar to the results of $CaO-SiO_2$ system. 3. The formed larnite and wollastonite were decomposed and melted at about $1260^{\circ}C$. 4. Anorthite began to be synthesized at $1140^{\circ}C$, its quantity was repidly increased according to the temperature rising.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1283-1288
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• 2004

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.

• Korean Journal of Materials Research
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• v.20 no.7
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• pp.370-373
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• 2010

In fabricating plasma display panels, the photolithographic process is used to form patterns of barrier ribs with high accuracy and high aspect ratio. It is important in the photolithographic process to control the refractive index of the photosensitive paste. The composition of this paste for photolithography is based on the $B_2O_3-SiO_2-Al_2O_3$ glass system, including additives of alkali oxides and rare earth oxides. In this work, we investigated the density, structure and refractive index of glasses based on the $B_2O_3-SiO_2-Al_2O_3$ system with the addition of $Li_2O$, $K_2O$, $Na_2O$, CaO, SrO, and MgO. The refractive index of the glasses containing K2O, Na2O and CaO was similar to that of the [BO3] fraction while that of the SrO, MgO and Li2O containing glasses were not correlated with the coordination fraction. The coordination number of the boron atoms was measured by MAS NMR. The refractive index increased with a decrease of molar volume due to the increase in the number of non-bridging oxygen atoms and the polarizability. The lowest refractive index (1.485) in this study was that of the $B_2O_3-SiO_2-Al_2O_3-K_2O$ glass system due to the larger ionic radius of $K^+$. Based on our results, it has been determined that the refractive index of the $B_2O_3-SiO_2-Al_2O_3$ system should be controlled by the addition of alkali oxides and alkali earth oxides for proper formation of the photosensitive paste.

• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.169-173
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• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.

• Journal of the Korean Ceramic Society
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• v.27 no.6
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• pp.790-798
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• 1990

Al2O3 film was chemically deposited by pyrolytic decom,positio of the Al-tri-isopropoxide/N2 system at 350$^{\circ}C$, 30 and 1.86torr. FTIR analysis showed a deposited film was a hydrated alumina and transformed to an anhydrous one after heat treatment(1hr, >800$^{\circ}C$ or 4hr, >500$^{\circ}C$) in N2 atmosphere. This transformation influenced on the CV-hysteresis of Si-Al2O3 structure. Also, a pH sensitivity of EIS(Electrolyte-Insulator-Semiconductor)structure using Si-Al2O3/SiO2 film was 50mV/pH in the range of pH 3 to 7.

• Bulletin of the Korean Chemical Society
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• v.28 no.1
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• pp.41-48
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• 2007

Large colorless single crystals of sodium zeolite X, stoichiometry |Na80 |[Si112Al80O384]-FAU, with diameters up to 200 μm and Si/Al = 1.41 have been synthesized from gels with the composition of 2.40SiO2 : 2.00NaAlO2 : 7.52NaOH : 454H2O : 5.00TEA. One of these, a colorless octahedron about 200 μm in cross-section has been treated with aqueous 0.1 M KNO3 for the preparation of K+-exchanged zeolite X. The crystal structure of |K80|[Si112Al80O384]-FAU per unit cell, a = 24.838(4) A, dehydrated at 673 K and 1 × 10-6 Torr, has been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd at 294 K. The structure was refined using all intensities to the final error indices (using only the 707 reflections for which Fo > 4σ (Fo)) R1 = 0.075 (based on F) and R2 = 0.236 (based on F2). About 80 K+ ions per unit cell are found at an unusually large number of crystallographically distinct positions, eight. Eleven K+ ions are at the centers of double 6-rings (D6Rs, site I; K-O = 2.492(6) A and O-K-O (octahedral) = 88.45(22)o and 91.55(22)o). Site-I' position (in the sodalite cavities opposite D6Rs) is occupied by five K+ ions per unit cell; these K+ ions are recessed 1.92 A into the sodalite cavities from their 3-oxygen planes (K-O = 2.820(19) A, and O-K-O = 78.6(6)o). Twety-three K+ ions are found at three nonequivalent site II (in the supercage) with occupancies of 5, 9, and 9 ions; these K+ ions are recessed 0.43 A, 0.75 A, and 1.55 A, respectively, into the supercage from the three oxygens to which it is bound (K-O = 2.36(13) A, 2.45(13) A, and 2.710(13) A, O-K-O = 116.5(20)o, 110.1(17)o, and 90.4(6)o, respectively). The remaining sixteen, thirteen, and twelve K+ ions occupy three sites III' near triple 4-rings in the supercage (K-O = 2.64(3) A, 2.94(3) A, 2.73(5) A, 2.96(6) A, 3.06(4) A, and 3.08(3) A).

• Journal of Powder Materials
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• v.11 no.2
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• pp.171-178
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• 2004

Effects of liquid phase and reinforcing particle morphology on the sintering of Al-6 wt％Cu-10 vol％ $Al_2O_3$ or SiC particles were studied in regards to densification, structure and transverse rupture properties. The Al-Cu liquid phase penetrated the boundaries between the aluminum matrix powders and the interfaces with reinforcing particles as well, indicating a good wettability to the powders. This enhanced the densification during sintering and the resulting strength and ductility. Since most of the copper added, however, was dissolved in the liquid phase and formed a brittle $CuAl_2$ phase upon cooling rather than alloyed with the aluminum matrix, the strengthening effect by the copper was not fully realized. Reinforcing particles of agglomerate type were found less suitable for the liquid phase sintering than solid type particles. $Al_2O_3$ and SiC particles protluced little difference on the sintering behavior but their size had a large effect. Repressing of the sintered composites increased density and bending properties but caused debonding at the matrix-particle interfaces and also fracturing of the particles.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.430-437
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• 2016

Aluminum oxide ($Al_2O_3$) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide ($C_{12}H_{30}Al_2O_2$), and water vapor ($H_2O$) as the reactant at deposition temperatures ranging from 150 to $300^{\circ}C$. The ALD process showed typical self-limited film growth with precursor and reactant pulsing time at $250^{\circ}C$; the growth rate was 0.095 nm/cycle, with no incubation cycle. This is relatively lower and more controllable than the growth rate in the typical $ALD-Al_2O_3$ process, which uses trimethyl aluminum (TMA) and shows a growth rate of 0.11 nm/cycle. The as-deposited $ALD-Al_2O_3$ film was amorphous; X-ray diffraction and transmission electron microscopy confirmed that its amorphous state was maintained even after annealing at $1000^{\circ}C$. The refractive index of the $ALD-Al_2O_3$ films ranged from 1.45 to 1.67; these values were dependent on the deposition temperature. X-ray photoelectron spectroscopy showed that the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ were stoichiometric, with no carbon impurity. The step coverage of the $ALD-Al_2O_3$ film was perfect, at approximately 100%, at the dual trench structure, with an aspect ratio of approximately 6.3 (top opening size of 40 nm). With capacitance-voltage measurements of the $Al/ALD-Al_2O_3/p-Si$ structure, the dielectric constant of the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ was determined to be ~8.1, with a leakage current density on the order of $10^{-8}A/cm^2$ at 1 V.

• Bulletin of the Korean Chemical Society
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• v.28 no.10
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• pp.1675-1682
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• 2007

Large colorless single crystals of faujasite-type zeolite with diameters up to 200 μm have been synthesized from gels with the composition of 3.58SiO2:2.08NaAlO2:7.59NaOH:455H2O:5.06TEA:1.23TCl. Two of these, colorless octahedron about 200 μm in cross-section have been treated with aqueous 0.1 M TlC2H3O2 and KNO3 in order to prepare Tl+- and K+-exchanged faujasite-type zeolites, respectively, and then determined the Si/Al ratio of the zeolite framework. The crystal structures of |Tl71|[Si121Al71O384]-FAU and |K53Na18|[Si121Al71O384]-FAU per unit cell, a = 24.9463(2) and 24.9211(16) A, respectively, dehydrated at 673 K and 1 × 10-6 Torr, have been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd m at 294 K. The two single-crystal structures were refined using all intensities to the final error indices (using only the 905 and 429 reflections for which Fo > 4σ(Fo)) R1/R2 = 0.059/0.153 and 0.066/0.290, respectively. In the structure of fully Tl+-exchanged faujasite-type zeolite, 71 Tl+ ions per unit cell are located at four different crystallographic sites. Twenty-nine Tl+ ions fill site I' in the sodalite cavities on 3-fold axes opposite double 6-rings (Tl-O = 2.631(12) A and O-Tl-O = 93.8(4)o). Another 31 Tl+ ions fill site II opposite single 6-rings in the supercage (Tl-O = 2.782(12) A and O-Tl-O = 87.9(4)o). About 3 Tl+ ions are found at site III in the supercage (Tl-O = 2.91(6) and 3.44(3) A), and the remaining 8 occupy another site III (Tl-O = 2.49(5) and 3.06(3) A). In the structure of partially K+-exchanged faujasite-type zeolite, 53 K+ ions per unit cell are found at five different crystallographic sites and 18 Na+ ions per unit cell are found at two different crystallographic sites. The 4 K+ ions are located at site I, the center of the hexagonal prism (K-O = 2.796(8) A and O-K-O = 89.0(3)o). The 10 K+ ions are found at site I' in the sodalite cavity (K-O = 2.570(19) A and O-KO = 99.4(9)o). Twenty-two K+ ions are found at site II in the supercage (K-O = 2.711(9) A and O-K-O = 94.7(3)o). The 5 K+ ions are found at site III deep in the supercage (K-O = 2.90(5) and 3.36(3) A), and 12 K+ ions are found at another site III' (K-O = 2.55(3) and 2.968(18) A). Twelve Na+ ions also lie at site I' (Na-O = 2.292(10) and O-Na-O = 117.5(5)o). The 6 Na+ ions are found at site II in the supercage (Na-O = 2.390(17) A and O-Na-O = 113.1(11)o). The Si/Al ratio of synthetic faujasite-type zeolite is 1.70 determined by the occupations of cations, 71, in two single-crystal structures.

• Journal of Energy Engineering
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• v.20 no.3
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• pp.171-177
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• 2011

PVA/GLA/$Al_2O_3{\cdot}3SiO_2$ composite membranes were prepared through the reaction polyvinyl alcohol (PVA) with glutaraldehyde (GLA) as a cross-linking agent and subsequently adding aluminum silicate ($Al_2O_3{\cdot}3SiO_2$) as an inorganic material. The water uptake decreased as the GDL contents increased due to cross-linking process of PVA with GDL, and the ion conductivity increased as the $Al_2O_3{\cdot}3SiO_2$ contents increased in PVA/GLA/$Al_2O_3{\cdot}3SiO_2$ composite membranes. The cross-linking structure of the polymers was confirmed using IR and the tendency of water uptake. The thermal analysis of the copolymers was carried out by TGA. TGA results showed that PVA/GLA composite membrane were more heat-resistant than PVA due to the cross-linking of PVA, and the heat stability of the composite membranes improved much more as the concentration of $Al_2O_3{\cdot}3SiO_2$ increased. Membranes prepared in this study seem to be have thermal stability and increase a tendency of the cation conductivity up to $60^{\circ}C$, but to be exhibit lower performance tendency at over $90^{\circ}C$. Therefore, it is necessary to do more aggressive effort to explore the possibility of application as an ion-conductive composite electrolyte.