• Journal of the Korean Chemical Society
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• v.60 no.3
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• pp.169-176
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• 2016

In a borate buffer solution, the growth kinetics and the electronic properties of passive film on aluminum were investigated, using the potentiodynamic method, chronoamperometry, and multi-frequency electrochemical impedance spectroscopy. The corrosion of aluminum was heavily influenced by the degree of oxygen concentration because of the increasing reduction current. The oxide film formed during the passivation process of aluminum has showed the electronic properties of n-type semiconductor, which follow from the Mott-Schottky equation. It was found out that the passive film (Al(OH)₃) of Al formed in the low electrode potential changes to Al₂O₃ while the electrode potential increases. The growth kinetics data as measured by chronoamperometry suggests a mechanism in which the growth of the film of Al₂O₃ is determined by field-assisted transport of ions through the film.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1096_1097
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• 2009

Aluminium doped zinc oxide(ZnO:Al) thin film, which is mainly used as a transparent conducting electrode in electronic devices, has many advantages compared with conventional indium tin oxide(ITO). In this paper in order to investigate the possible application of ZnO:Al thin films as a transparent conducting electrode for flexible film-typed dye sensitized solar cell (FT-DSCs), ZnO:Al and ITO thin films were prepared on the polyethylene terephthalate (PET) substrate by r. f. magnetron sputtering method. Specially one-inched FT-DSCs using either a ZnO:Al or ITO electrode were also fabricated separately under the same manufacturing conditions. Some properties of both the FT-DSCs with ZnO:Al and ITO transparent electrodes, such as conversion efficiency, fill factor, and photocurrent were measured and compared with each other. The results showed that by doping the ZnO target with 2 wt% of $Al_2O_3$, the film deposited at discharge power of 200W resulted in the minimum resistivity of $2.2\times10^{-3}\Omega/cm$ and at ransmittance of 91.7%, which are comparable with those of commercially available ITO. Two types of FT-DSCs showed nearly the same tendency of I-V characteristics and the same value of conversion efficiencies. Efficiency of FT-DSCs using ZnO:Al electrode was around 2.6% and that of fabricated FT-DSCs using ITO was 2.5%. This means that ZnO:Al thin film can be used in FT-DSCs as a transparent conducting layer.

• Transactions on Electrical and Electronic Materials
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• v.9 no.2
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• pp.67-72
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• 2008

Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (100) and homo-buffer layers in pure oxygen ambient. ZnO ceramic mixed with 2 wt% $Al_2O_3$ was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-2}$, mobilities from 0.194 to $198\;cm^2V{-1}s^{-1}$ and resistivities from 0.0963 to $18.4\;{\Omega}cm$. FESEM cross section images of different parts of a p-type ZnO:Al thin film annealed at $800^{\circ}C$ show a compact structure. Measurement for same sample shows that density is $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV which is ascribed to electron transition from donor level to acceptor level (DAP).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.376-380
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• 2008

The optical properties of multi layered thin films with $Sb_2O_3/Na_3AlF_6/Sb_2O_3/Cr$ were simulated by using EMP(Essential Macleod Program). EMP is a comprehensive software package to design and analyse the optical characteristics of multi-layered thin film. $Sb_2O_3$ and $Na_3AlF_6$ were selected as a high refractive index and low refractive index material respectively. Additionally Cr was chosen as mid reflective material. Optical properties including color effect were systematically studied in terms of different optical thickness of low refractive index material. The optical thickness of $Na_3AlF_6$ was changed as 0.25, 0.5, 0.75 and $1.0\lambda$. The film with 0.25, 0.5, 0.75 and $1.0\lambda$ of optical thickness showed mixed color range between purple and red range, yellowish green and bluish green, purple and mixed color range of green and purple respectively.

• Proceedings of the KIEE Conference
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• 1987.11a
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• pp.511-514
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• 1987

Langmuir-Blodgett (LB) films of TCNQ(tetracyanoquinodimethane) with alkyl radical($C_{12}TCNQ$) were prepared on the sample of Al/LB film/Al type where Al are electrode, and polarization in LB film and dipolar moment of molecules in the films were measured by TSC. $Al_2O_3$ layer was yielded on the electrode by natural oxidation in air. According to the cooperation of $Al_2O_3$ dielectric layer and the polarization of $C_{12}TCNQ$-LB film, the macroscopic electrical field was yielded in LB film and $Al_2O_3$ layer. The field strength in $C_{12}TCNQ$-LB films was evaluated at about $1{\times}10^6{\sim}5{\times}10^6\;V/cm$.

• Current Photovoltaic Research
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• v.1 no.2
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• pp.103-108
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• 2013

Epitaxial growth of a high-quality thin Si film is essential for the application to low-cost thin-film Si solar cells. A polycrystalline Si film was grown on a $SiO_2$ substrate at $450^{\circ}C$ by a Al-assisted crystal growth process. For the purpose, a thin Al layer was deposited on the $SiO_2$ substrate for Al-assisted crystal growth. However, the epitaxial growth of Si film resulted in a rough surface with humps. Then, we introduced a thin amorphous Si seed layer on the Al film to minimize the initial roughness of Si film. With the help of the Si seed layer, the surface of the epitaxial Si film was smooth and the crystallinity of the Si film was much improved. The grain size of the $1.5-{\mu}m$-thick Si film was as large as 1 mm. The Al content in the Si film was 3.7% and the hole concentration was estimated to be $3{\times}10^{17}/cm^3$, which was one order of magnitude higher than desirable value for Si base layer. The results suggest that Al-doped Si layer could be use as a seed layer for additional epitaxial growth of intrinsic or boron-doped Si layer because the Al-doped Si layer has large grains.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1998.04b
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• pp.6-6
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• 1998

In 1957, the first magnetic disk drive compatible with a movable head was introduced as an external file memory device for computer system. Since then, magnetic disks have been improved by increasing the recording density, which has brought about the development of a high performance thin film magnetic head. The thin film magnetic head has a magnetic circuit on a ceramic substrate using IC technology. The physical property of the substrate material is very important because it influences the tribology of head/disk interface and also manufacturing process of the head. $Al_{2}O_{3}$-TiC ceramics, so called ALTIC, is known to be one of the best substrate materials which satisfies this property requirement. Even though the head is not in direct contact with the disk, frequent instantaneous contacts are unavoidable due to its high rotating speed and the close gap between them. This may cause damage in the magnetic recording media and, thus, it is very important that the magnetic head has a good wear resistance. $Al_{2}O_{3}$-TiC ceramics has an excellent tribological property in head/disk interface. Manufacturing process of thin film head is similar to that of IC, which requires extremely smooth and flat surface of the substrate. The substrate must be readily sliced into the heads without chipping. $Al_{2}O_{3}$-TiC ceramics has excellent machineability and mechanical properties. $Al_{2}O_{3}$-TiC ceramics was first developed at Nippon Tungsten Co. as cutting tool materials in 1968, which was further developed to be used as the substrate materials for thin film head in collaboration with Sumitomo Special Metals Co., Ltd. in 1981. Today, we supply more than 60% of the substrates for thin film head market in the world. In this paper, we would like to present the sintering process of $Al_{2}O_{3}$-TiC ceramics and its property in detail.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.273-277
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• 2018

This research introduces the sputtered IZO thin film transistor (TFT) with solution-processed $Al_2O_3$ diffusion layer. IZO is one of the most commonly used amorphous oxide semiconductor (AOS) TFT. However, most AOS TFTs have many defects that degrade performance. Especially oxygen vacancy in the active layer. In previous research, aluminum was used as a carrier suppressor by binding the oxygen vacancy and making a strong bond with oxygen atoms. In this paper, we use a solution-processed $Al_2O_3$ diffusion layer to fabricate stable IZO TFTs. A double-layer solution-processed $Al_2O_3$-sputtered IZO TFT showed better performance and stability, compared to normal sputtered IZO TFT.

• Journal of the Korean Magnetics Society
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• v.11 no.3
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• pp.109-113
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• 2001

Presently, an inductor adapted at MMIC (Monolithic Microwave Integrated Circuit) which is used for cellular phone or PHS operates at quasi-microwave range over 800 MHz. However, a W-CDMA (Wideband Code Division Multiple Access) will use about 2 GHz range. Therefore magnetic film device should be compatible up to 2 GHz. We have deposited Co-Pd-Al-O system film using rf sputtering method which is expected up to 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, Hk was 118 Oe, and ${\mu}$′showed flat frequency characteristics up to 1.5 GHz. The Q factor (=${\mu}$′/${\mu}$") was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2 GHz. Therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for wide band CDMA type cellular phone.

• Journal of the Korean institute of surface engineering
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• v.42 no.2
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• pp.86-94
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• 2009

Various types of multilayer coatings including Al/$Al_2O_3$ structure have been prepared on Nd-Fe-B permanent magnet to modify the morphology of the coating and to enhance the corrosion resistance of the magnet. Magnetron sputtering has been employed to make the multilayer coatings. $Al_2O_3$sputtering conditions were optimized in reactive sputtering by varying the deposition parameters. The formation of $Al_2O_3$ film was confirmed from the binding energy shift measured by electron spectroscopy for chemical analysis. 3 types of coating structures were designed and prepared by magnetron sputtering. The coating structures consist of (1) single Al coating, (2) modified coatings having oxide or plasma treated layer in the middle of coating structure, and (3) Al/$Al_2O_3$ multilayer coatings. Surface and cross-sectional morphologies showed that Al/$Al_2O_3$ multilayer grew as a layered structure, and that very compact Zone 3 like structure were formed. X-ray diffraction peak showed that the crystal orientations of multilayer coatings were similar to that of the bulk powder pattern. Hardness increased drastically when the Al thickness was around 1im in the Al/$Al_2O_3$ multilayer. From the salt spray test and pressure cooker test, it has been shown that the multilayer coatings showed good corrosion resistance compared to Al single or modified layer coatings.