LB 초박막 Hetero 구조에서 내장전계의 발생

Generation of Inner Electrical Field in Hetero Structure of LB Ultra Thin Films

  • 권영수 (일본 동경공업대학. 공학부) ;
  • 강도열 (홍익대학교. 공과대학) ;
  • Kwon, Young-Soo (Faculty of Engineering, Tokyo Institute of Technology) ;
  • Kang, Dou-Yol (College of Engineering, Hong Ik University) ;
  • Hino, Taro (Faculty of Engineering, Tokyo Institute of Technology)
  • 발행 : 1987.11.20

초록

Langmuir-Blodgett (LB) films of TCNQ(tetracyanoquinodimethane) with alkyl radical($C_{12}TCNQ$) were prepared on the sample of Al/LB film/Al type where Al are electrode, and polarization in LB film and dipolar moment of molecules in the films were measured by TSC. $Al_2O_3$ layer was yielded on the electrode by natural oxidation in air. According to the cooperation of $Al_2O_3$ dielectric layer and the polarization of $C_{12}TCNQ$-LB film, the macroscopic electrical field was yielded in LB film and $Al_2O_3$ layer. The field strength in $C_{12}TCNQ$-LB films was evaluated at about $1{\times}10^6{\sim}5{\times}10^6\;V/cm$.

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