대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

LB 초박막 Hetero 구조에서 내장전계의 발생

Generation of Inner Electrical Field in Hetero Structure of LB Ultra Thin Films

  • 권영수 (일본 동경공업대학. 공학부) ;
  • 강도열 (홍익대학교. 공과대학) ;
  • Kwon, Young-Soo (Faculty of Engineering, Tokyo Institute of Technology) ;
  • Kang, Dou-Yol (College of Engineering, Hong Ik University) ;
  • Hino, Taro (Faculty of Engineering, Tokyo Institute of Technology)
  • 발행 : 1987.11.20
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초록

Langmuir-Blodgett (LB) films of TCNQ(tetracyanoquinodimethane) with alkyl radical($C_{12}TCNQ$) were prepared on the sample of Al/LB film/Al type where Al are electrode, and polarization in LB film and dipolar moment of molecules in the films were measured by TSC. $Al_2O_3$ layer was yielded on the electrode by natural oxidation in air. According to the cooperation of $Al_2O_3$ dielectric layer and the polarization of $C_{12}TCNQ$-LB film, the macroscopic electrical field was yielded in LB film and $Al_2O_3$ layer. The field strength in $C_{12}TCNQ$-LB films was evaluated at about $1{\times}10^6{\sim}5{\times}10^6\;V/cm$.

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