• Transactions on Electrical and Electronic Materials
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• v.7 no.2
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• pp.72-75
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• 2006

Ferroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(Zr/Ti=60/40) paste was made and alternately screen-printed on the $Al_2O_3$ substrates. We have introduced a press-treatment to obtain a good densification of screen printed films. The porosity of the thick films was decreased with increasing the applied pressure and the thick films pressed at $0.6ton/cm^2$ showed the dense microstructure and thickness of about $76{\mu}m$. The relative dielectric constant increased with increasing the applied pressure. The remanent polarization and coercive field increased with increasing applied pressure and the values for the PZT thick films pressed at $0.6ton/cm^2$ were $16.6{\mu}C/cm^2$, 76.9 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.200-201
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• 2005

PFerroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(40/60) and PZT(60/40) paste were made and alternately screen-printed on the $Al_2O_3$ substrates. We have introduced a press-treatment to obtain a good densification of screen printed films. The porosity of the thick films were decreased with increasing the applied pressure and the thick films pressed at 0.6 ton/$cm^2$ showed the dense microstructure and thickness of about 76${\mu}m$. The remanent polarization and coercive field increased with increasing applied pressure and the values for the PZT thick films pressed at 0.6 ton/$cm^2$ were 17.04${\mu}Ccm^2$, 78.09 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.332-332
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• 2010

We have successfully demonstrated the inkjet printing method to create $Al_2O_3$ films withouWe have successfully demonstrated the inkjet printing method to create $Al_2O_3$ films without a high temperature sintering process. In order to remove the coffee ring effect in the ink drop, we have introduced a co-solvent system in order to create Marangoni flow in the ink drop, which leads to the dense packing of ceramic powders on the substrate during inkjet process. The packing density of the Inkjet-printed $Al_2O_3$ films is around 60% (max. 70%) which is very high compared to the value obtained from the same material films by other conventional methods such as film casting, dip coating process, etc. The voids inside the films (which are around 40% of the entire film volume) are filled with the polymer resin (Cyanate ester) by the infiltration process. This resin infiltration is also implemented by the inkjet printing process right after the Ah03 film ink-jetting process. The microstructures of the printed $Al_2O_3$ films are investigated by Scanning Electron Microscope (SEM) to understand the degree of packing density in the printed films. The inkjet-printed $Al_2O_3$ films have been characterized to investigate its thickness and roughness. Quality factor of the printed $Al_2O_3$ film is also measured to be over 300 at 1MHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.81-81
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• 2009

Non-sintered Alumina films were fabricated via inkjet printing processes without a high temperature sintering process. The packing density of these inkjet-printed alumina films measured around 60%. Polymer resin was infiltrated thru these non-sintered films in order to fill out the 40% of voids constituting the rest of the inkjet-printed films. The concept of inkjet-printed Alumina-Resin hybrid materials was designed in order to be applicable to the ceramic package substrates for 3D-system module integration which may possibly substitute LTCC-based 3D module integration. So, the dielectric properties of these inkjet-printed $Al_2O_3$ hybridmaterialsareofourgreatinterest. We have measured dielectric constant and dissipation factor of the inkjet-printed $Al_2O_3$-resinhybridfilmsbyvaryingtheamountofresininfiltratedthruthe$Al_2O_3$films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.350-355
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• 2014

Bottom-gate tin oxide ($SnO_2$) thin film transistors (TFTs) were fabricated on $N^+$ Si wafers used as gate electrodes. 60-nm-thick $SnO_2$ thin films acting as active layers were sputtered on $SiO_2/Al_2O_3$ films. The $SiO_2/Al_2O_3$ films deposited on the Si wafers were employed for gate dielectrics. In order to increase the resistivity of the $SnO_2$ thin films, oxygen mixed with argon was introduced into the chamber during the sputtering. The mobility of $SnO_2$ TFTs was measured as a function of the flow ratio of oxygen to argon ($O_2/Ar$). The mobility variation with $O_2/Ar$ was analyzed through studies on crystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-ray photoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state of $SnO_2$ films. The mobility decreased with increasing $O_2/Ar$. It was found that the decrease of the mobility is mainly due to the decrease in the polarizability of $SnO_2$ films.

• Journal of the Korean Ceramic Society
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• v.43 no.5 s.288
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• pp.265-269
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• 2006

We have deposited NiO films by RF sputtering on $Al_2O_3/SiO_2/Si$ and 100 nm-thick Gd doped $CeO_2$ covered $Al_2O_3/SiO_2/Si$ substrates at various $Ar/O_2$ ratios. The deposited films were reduced to form porous Ni thin fllms in 4% $H_2\;at\;400^{\circ}C$. For the films deposited in pure Ar, the reduction was retarded due to the thickness and the orientation of the NiO films. On the other hand, the films deposited in oxygen mixed ambient were reduced and formed porous Ni films after 20 min of reduction. We also investigated the possibility of using the films for the single chamber operation by studying the electrical property of the films in the fuel/air mixed environment. It is shown that the resistance of the Ni film increases quickly in the mixed gas environment and thus further improvements of Ni-base anodes are required for using them in the single chamber operation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.309-314
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• 1997

The electrical properties of thick PZT films deposited on Ag-Pd/$Al_2O_3$ and Pt electrodes were carefully investigated according to the annealing methods and the sub-strates. For electrical properties measurements, silver was deposited on PZT films as top electrode. The crystallogaphic structure of the films was examined by standard X-ray diffraction method to determine which crystalline phase was present. Dielctric constant was measured at 1 kHz, 10 mV by using a HP4284A. The electrical properties of PZT films with 3 wt% PbO addition were not improved. It was also found that the Ag-Pd layer has a good possibility as electrode instead of Pt. It seems clear from the present experiments that the thick PZT films having the good electrical properties can certainly be obtained using spin on technique combined with rapid thermal annealing.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.339-344
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• 2017

Highly corrosion resistance performance of CrAlSiN coatings were obtained by applying ultrathin $Al_2O_3$ thin films using atomic layer deposition (ALD) method. CrAlSiN coatings were prepared on Cr adhesion layer/SUS304 substrates by a hybrid coating system of arc ion plating and high power impulse magnetron sputtering (HiPIMS) method. And, ultrathin $Al_2O_3$ passivation layer was deposited on the CrAlSiN/Cr adhesion layer/SUS304 sample to protect CrAlSiN coatings by encapsulating the whole surface defects of coating using ALD. Here, the high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and energy dispersive X-ray spectrometry (EDX) analysis revealed that the ALD $Al_2O_3$ thin films uniformly covered the inner and outer surface of CrAlSiN coatings. Also, the potentiodynamic and potentiostatic polarization test revealed that the corrosion protection properties of CrAlSiN coatings/Cr/SUS304 sample was greatly improved by ALD encapsulation with 50 nm-thick $Al_2O_3$ thin films, which implies that ALD-$Al_2O_3$ passivation layer can be used as an effect barrier layer of corrosion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.521-524
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• 2010

Low loss perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. In this study, we fabricated Ag(Ta,Nb)$O_3$ thick films on the $Al_2O_3$ substrates by the screen printing method. The Ag(Ta,Nb)$O_3$ powders were fabricated by the mixed oxide method. The sintering temperature and time were $1150^{\circ}C$ and 2 hrs, respectively. The results of XRD analysis showed that the specimens employed in this study had the pesudo cubic structure. The dielectric permittivity and loss tangent of the films have been characterized from 1 kHz to 1 MHz. Also the dielectric permittivity and loss tangent were measured from 303 K to 393 K. The electrical properties of the film are also discussed.

• Transactions of the Korean hydrogen and new energy society
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• v.22 no.3
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• pp.319-325
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• 2011

The electrical properties of sputtered GDC thin films on $Al_2O_3$ substrates was studied. The electrical properties of the films were measured to evaluate the ion conductivity of GDC thin films for co-planar SOFC electrolytes. The impedance of the GDC thin films on $Al_2O_3$ substrates was affected by the film thickness and the impedance of thin film exhibited higher value than thick films. Similarly, the conductivity of the thick film showed much higher value than thin films. It indicated that the film thickness is the main factor affecting the conductivity and impedance of the GDC electrolyte for the co-planar SOFC.