• Rapid Communication in Photoscience
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• 제4권2호
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• pp.45-47
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• 2015

We have successfully synthesized $AgInS_2$ core and $AgInS_2$/ZnS core/shell nanoparticles by the sonochemical method. The ultrasonic based $AgInS_2$ and $AgInS_2$/ZnS nanoparticle synthesis can be utilized as a simple and rapid method. The $AgInS_2$/ZnS nanoparticles show the higher fluorescence intensity and quantum yield than $AgInS_2$ nanoparticles. Fluorescence wavelength of $AgInS_2$/ZnS shows blue shift from 635 nm to 610 nm against $AgInS_2$ because of reducing the defect sites and increasing spatial confinements. For the fluorescence lifetime, $AgInS_2$/ZnS (124.8 ns) has longer lifetime than $AgInS_2$ (54.8 ns).

• 한국결정성장학회지
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• 제12권4호
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• pp.196-201
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• 2002

The $AgInS_{2}$ epilayers with a chalcopyrite structure grown using a hot-wall epitaxy method have been confirmed to be a high quality crystal. From the optical absorption measurements, a temperature dependence of the energy band gap on $AgInS_{2}/GaAs$ was found to be $Eg(T)=2.1365eV-(9.89{\times}10^{-3}eV)T^{2}/(2930+T)$. After the as-grown $AgInS_{2}/GaAs$ was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of $AgInS_{2}/GaAs$ has been investigated by using photoluminescence measurements at 10 K. The native defects of $V_{Ag},\;V_{S},\;Ag_{int}$ and $S_{int}$ obtained from photoluminescence measurements were classified as donors or accepters. It was concluded that the heat-treatment in the S-atmosphere converted $AgInS_{2}/GaAs$ to an optical p-type. Also, it was confirmed that In in $AgInS_{2}/GaAs$ did not form the native defects because In in $AgInS_{2}$ did exist in the stable form.

• 비파괴검사학회지
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• 제25권2호
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• pp.117-126
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• 2005

[ $AgGaS_2$ ] 단결정 박막을 수평 전기로에서 합성한 $AgGaS_2$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판 (반절연성 -GaAs (100))의 온도를 각각 $590^{\circ}C,\;440^{\circ}C$로 고정하여 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 X-선 요동곡선 (DCRC)으로 부터 구하였다. $AgGaS_2$의 광흡수 스펙트럼으로부터 구한 온도에 의존하는 에너지 밴드갭 $E_g(T)$는 Varshni. 공식에 fitting한 결과 $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$를 잘 만족하였다. 성장된 $AgGaS_2$, 단결정 박막을 Ag, Ga, S분위기에서 각각 열처리하여 10K에서 photoluminescience(PL) spectrum을 측정하여 점 결함의 기원을 알아보았다. PL 측정으로부터 얻어진 $V_{Ag},\;V_s,\;Ag_{int}$, 그리고 $S_{int}$는 주개와 받개로 분류되어졌다. $AgGaS_2$ 단결정 박막을 Ag분위기에서 열처리하면 n형으로 변환됨을 알 수 있었다. 또한, Ca 분위기에서 열처리하면 열처리 이전의 PL스펙트럼을 보이고 있어서, $AgGaS_2$ 단결정 박막에서 Ga은 안정된 결합의 형태로 있기 때문에 자연 결함의 형성에는 관련이 없음을 알았다.

• Transactions on Electrical and Electronic Materials
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• 제5권2호
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• pp.50-54
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• 2004

The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of E$\_$g/(T) = 2.1365 eV - (9.89${\times}$10$\^$－3/ eV/K) T$^2$/(2930＋T eV). After the as-grown AgInS$_2$/GaAs was annealed in Ag－, S－. and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of $V_{Ag}$, $V_s$, $Ag_{int}$, and $S_{int}$ obtained from PL measurement were classified to donors or accepters type. And, we concluded that the heat-treatment in the S- atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did not form the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.823-827
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• 2001

The AgInS$_2$epilayers with chalcopyrite structure grown by using a hot-wall epitaxy (HWE) method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on the AgInS$_2$/GaAs was derived as the Varshni's relation of Eg(T)=2.1365 eV-(9.89${\times}$10$\^$-3/ eV)T$^2$/(2930+T). After the as-grown AgInS$_2$/GaAs was annealed in Ag-,S-, and In-atmosphere, the origin of point defects of the AgInS$_2$/GaAs has been investigated by using the photoluminescence (PL) at 10 K. The native defects of V$\_$Ag/, V$\_$s/, Ag$\_$int/, and S$\_$int/ obtained from PL measurement were classified to donors or acceptors type. And, we concluded that the heat-treatment in the S-atmosphere converted the AgInS$_2$/GaAs to optical p-type. Also, we confirmed that the In in the AgInS$_2$/GaAs did net from the native defects because the In in AgInS$_2$did exist as the form of stable bonds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.

• 한국결정성장학회지
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• 제11권6호
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• pp.274-284
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• 2001

A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.

• 한국결정성장학회지
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• 제2권1호
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• pp.76-85
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• 1992

열전 재료로 사용되는 $Ag_2S$의 단결정을 밀폐된 석영관내에서 고상의 $Ag_2S$가 분해되면서 성장 계면에 $Ag^+$이온과 전자를 공급하고, 휘발성이 강한 황은 vapour 상태로 전송되면서, $Ag_2S$ 계면에서부터 단결정이 성장하는 고상에서의 전기 화학적인 방법을 이용한 vapour 성장법으로 성장시켰다. 고상에서의 $Ag^+$ 이온의 확산이 성장을 지배하는 온도 영역에서는 bulk $Ag_2S$ 단결정을 얻었으며, Ag 분해 온도가 높을수록, Ag분해 온도와 성장 계면의 온도 차이가 클수록 성장속도가 빠름을 확인하였다. 한편 기상으로의 황의 확산이 성장을 지배하는 영역에서는 whisker Ag$_2$S가 성장되었으며 황의 포화 압력이 증가할수록 성장속도는 증가하였다. 또한, 열전재료의 효율을 결정하는 물성치인 전기 전도도를 측정한 결과 고온상에서 다결정의 전기 전도도가 단결정보다 크게 나타나며, 따라서 열전 효율은 다결정이 우수하다고 생각된다.

• 자원환경지질
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• 제39권6호
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• pp.643-651
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• 2006

낙동 비소-비스무스 광상에서 산출되는 Pb-Ag-Bi-S계에 광물로는 방연석-마틸다이트(matildite) 고용체, 코살라이트(cosalite) 및 헤이로브스카이트(herovskyite)가 있다. 방연석-마틸다이트 고용체의 경우 자연비스무스와 더불어 황철석내의 틈을 채우면서 산출되는데, 불규칙한 모양을 이룬다. 코살라이트는 석영맥내에서 자연비스무스, 헤이로브스카이트 및 Bi-Te-S계 광물들을 포함하며, 타형의 독립된 결정으로 산출된다. 낙동광상에서 산출되는 마틸다이트는 $Ag_{1.07-1.11}Bi_{1.12-1.20}S_2$의 단성분 조성을 이루는 것므로 이상화학조성에 비해 $0.3{\sim}2.4$mole%의 $Bi_2S_3$가 초과 함유되어 있다. PbS와 $AgBiS_2$를 단성분하는 고용체의 경우 PbS는 약 54 mole% 이하의 함량을 나타내고, 그 이상의 경우는 관찰되지 않는다. 연구지역 코살라이트의 평균화학소성은 $Pb_{1.79}Bi_{2.29}Ag_{0.12}S_5$로서 순수한 코살라이트에 비하여서는 Pb가 결핍되어 있으며, Ag와 Cu를 각각 최대 1.47 wt.%와 0.27 wt.% 함유하고 있다. 헤이로브스카이트는 $Pb_{5.01}Ag_{0.26}Bi_{2.70}S_9$ 조성을 보이는데 $2Pb^{2+}$에 대한 $Ag^++Bi^{3+}$의 쌍치환과 더불어 $3Pb^{2+}$에 대한 $2Bi^{3+}$의 치환이 함께 일어난 것으로 여겨진다. 낙동광상의 Pb-Ag-Bi-S계 광물들의 생성 조건은 대략 $220{\sim}270^{\circ}C$ 온도와 200bar 미만의 압력인 것으로 해석된다.

• 한국전기전자재료학회논문지
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• 제23권9호
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• pp.681-684
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• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.