• ETRI Journal
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• 제26권4호
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• pp.315-320
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• 2004

This paper proposes a 10-${\mu}m$ thick oxide layer structure that can be used as a substrate for RF circuits. The structure has been fabricated using an anodic reaction and complex oxidation, which is a combined process of low-temperature thermal oxidation (500 $^{\circ}C$ for 1 hr at $H_2O/O_2$) and a rapid thermal oxidation (RTO) process (1050 ${\circ}C$, for 1 min). The electrical characteristics of the oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current density through the OPSL of 10 ${\mu}m$ was about 10 to 50 $nA/cm^2$ in the range of 0 to 50 V. The average value of the breakdown field was about 3.9 MV/cm. From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL prepared by a complex process were confirmed to be completely oxidized. The role of the RTO process was also important for the densification of the porous silicon layer (PSL) oxidized at a lower temperature. The measured working frequency of the coplanar waveguide (CPW) type short stub on an OPSL prepared by the complex oxidation process was 27.5 GHz, and the return loss was 4.2 dB, similar to that of the CPW-type short stub on an OPSL prepared at a temperature of 1050 $^{\circ}C$ (1 hr at $H_2O/O_2$). Also, the measured working frequency of the CPW-type open stub on an OPSL prepared by the complex oxidation process was 30.5 GHz, and the return was 15 dB at midband, similar to that of the CPW-type open stub on an OPSL prepared at a temperature of $1050^{\circ}C$ (1 hr at $H_2O/O_2$).

• 한국분말재료학회지
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• 제7권1호
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• pp.35-41
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• 2000

Al2O3$.$SiC particle was prepared was prepared by the self-propagting high temperature sYthesis(SHS) process from a mixture of SiO2, Al and C powders, The fabricated Al2O3$.$SiC particle was applied to 2024Al/(Al2O3$.$SiC)pcomposite as a reinforcement. Aluminum matix composites were fabricares by the powder extrusion method using the synthesized Al2O3$.$SiC particle and commercial 2024Al powder. Theoptimum preparation conditions for Al2O3$.$SiC partticle by SHS process were described. The influence of the Al2O3$.$SiC voiume fraction on the mechanical was composite was also discussed. Despite adiabatic temperature was about 2367K, SHs reaction was completed not by itself, but by using pre-heating. Mean particle size of final particle synthesized was 0.73 ${\mu}$m and most of the particle was smaller than 2${\mu}$m. Elastic modulus and tensile strength of the composite increased with increase the volume fraction of reinforcement but, tensile strength depreciated at 30 vol% of reinforcement.

• 공업화학
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• 제8권2호
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• pp.301-307
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• 1997

응집이 없는 단분산의 $SiO_2/TiO_2$ 복합 미립자를 얻기 위하여 $TiO_2$seed가 분산되어 있는 에탄올 수용액과 TEOS (Tetraethyl Orthosilicate)를 에탄올에 녹인 용액을 혼합하여 $TiO_2$ 주위에서 TEOS가 가수분해 및 축합 반응이 일어나도록 유도하여 복합 미분말을 제조하였다. 촉매로 암모니아를 사용하였고, 반응온도는 실온이었다. 반응변수는 TEOS의 농도, 암모니아의 농도, $TiO_2$ seed의 크기 및 양이었다. 응집이 없는 복합 미립자를 얻기 위한 최적조건은 [TEOS]=0.3M, [$NH_4OH$]=0.7M, $TiO_2$ seed의 크기가 200~300 nm이었고, 이때 $0.8{\sim}0.9{\mu}m$의 입자크기를 갖는 복합입자를 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.465-465
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• 2012

In this study, we developed an Al2O3 nanolaminated single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nanocrystal phase with various grain sizes and lead to the formation of a nanolaminated structure in the single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the nanolaminated Al2O3 thin films by NBAS process have improved more than 40% compared with that of conventional Al2O3 layers by the RF magnetron sputtering process under the same sputtering conditions.

• 한국세라믹학회지
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• 제34권8호
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• pp.811-816
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• 1997

SiO2-P2O5-B2O3 glass soot was fabricated by flame hydrolysis deposition and their properties by SEM, XRD, TGA-DSC were investigated., The mechanism of consolidation process of a glass soot as a function of consolidation temperature was analyzed by SEM observations. In the XRD patterns, the crystalline peaks which seem to be generated from B2O3 and BPO4 were observed. When the temperature of heat treatment exceeded 105$0^{\circ}C$, the non-crystalline state of SiO2-P2O5-B2O3 glass was observed. In the TGA-DSC curves, the evaporation of water molecule by a sudden endothermic reaction was observed at 128$^{\circ}C$ and a broad endothermic peak was seen in the temperature range of 40$0^{\circ}C$-95$0^{\circ}C$, without any weight loss. Finally, this peak was began to recover its baseline at 953$^{\circ}C$. This point is equal to the temperature at which the densification begins. Furthermore, we observed that the addition of dopants such as P2O5 and B2O3 decrease the onset of consolidation temperature till 95$0^{\circ}C$.

• 조명전기설비학회논문지
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• 제15권6호
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• pp.89-96
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• 2001

본 논문에서는 생물학적 반응을 이용한 하수처리에서 미생물의 유기물 분해 반응에 필요한 적정 폭기량을 판단하는 기법을 제안한다. 적정 폭기량의 판단 시스템은 크게 세가지 부분으로 구성된다. 첫 번째는 주어진 운전데이터로부터 적정 폭기량을 판단하는 기능이며, 두 번째는 투입 폭기량을 판단된 적정 폭기량으로 변경했을 때의 처리 성능을 하수 처리 과정의 모델을 이용하여 계산하는 부분이고, 세 번째는 판단 결과를 보여주는 부분이다. 40일 동안의 하수처리장 운전데이터를 이용하여 제안된 판단 시스템의 성능을 확인하여 본 결과, 하수처리의 목적을 달성하면서도 폭기량을 10%이상 절감할 수 있음을 보였다

• 상하수도학회지
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• 제26권2호
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• pp.237-247
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• 2012

This study assessed the removal characteristics of taste and odor causing compounds (2-methylisoborneol and geosmin) and organic matters, using a pilot-scale ozone/granular activated carbon ($O_{3}$/GAC) process treating surface water of Pal-dang reservoir in the Han river over a 3-month period. Experiments were conducted to verify the removal efficiency of $O_{3}$/GAC process which has two different empty bed contact time (EBCT) ($O_{3}$/GAC column 1 : 10 min and 2 : 15.1 min) with 10.86 min contact time of ozonation at 1.0 mg/L $O_{3}$. Spiking test using geosmin and 2-MIB was also conducted systematically to mimic the conditions when the algae appears, specifically at the levels similar to the concentrations experienced (geosmin: 250 ng/L) in the winter of 2011. In single ozonation process, organic materials, disinfection by-products (DBPs) and their precursors were disassembled but not removed completely. Meanwhile, it was verified that organic matters, taste and odor causing compounds, and DBPs were well removed when sequentially passing through the GAC process. The pilot results also showed that GAC column with larger EBCT achieved higher removal efficiency. Specifically, in spiking tests, single $O_{3}$ process showed approximately 89% removal efficiency of geosmin and 2-MIB. $O_{3}$/GAC combined process demonstrated excellent removal of geosmin and 2-MIB, which are higher than 95%.

• 전자공학회논문지A
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• 제31A권8호
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• pp.53-61
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• 1994

Intermetallic dielectric layer was formed by using SiO$_2$/SOG/SiO$_2$ for aluminum based dual-metal interconnection process and its electric characteristics were evaluated. The dielectric layer was in the cost and facility point of view more useful than the insulator that was formed by etch-back process. The planarity by using SOG process was about 40% higher than that of the insulator by the CVD process. When SiO$_2$ films were deposited by the PECVD process the Al hillock formation during the next process was restrained bucause the intermetalic insulator was made at low temperature. The leakage current was 1${\times}10^{7}~1{\times}10^{-8}A/cm^{2}$ at the electric field of 10$^{5}$V/cm and breakdown filed was 4.5${\times}10^{6}~7{\times}10^{6}A/cm$. So we had confirmed that siloxane SOG was very useful for intermetallic layer material.

• 한국세라믹학회지
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• 제33권9호
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• pp.985-994
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• 1996

The initiation and growth of $\alpha$-Al2O3/metal composites by the directed oxidation of molten commercial AlZnMg-alloy at 1223-1423K were investigated. Spontaneous bulk growth did not occur on the alloy alone. but the uniform initiation and growth of the composite were obtained by putting a thin layer of SiO2 particles on the surface of the alloy. Without SiO2 the external surface of the oxide layer was convered by MgO and MgAl2O4. But with the SiO2 reaction initiate the porous ZnO layers were found on the growth surface. The higher process temperature yielded a lower metal content. The oxidation product of $\alpha$-Al2O3 was found to be oriented with c-axis parallel to th growth direction. The growth rates increased with temperature and the apparent activation energy was 111.8 kJ/mol.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.151-152
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• 2009

We coated $TiO_2$ thin films on particles by a rotating cylindrical plasma chemical vapor deposition (PCVD) process and investigated the effects of various process variables on the morphology and growth of thin films. The polypropylene (PP) particles were rotated with the cylindrical PCVD reactor and they were coated with $TiO_2$ thin films uniformly by the deposition of thin mm precursors in the gas phase. The $TiO_2$ thin films were coated on the PP particles uniformly and the thickness of thin films almost proportional to the deposition time. The $TiO_2$ thin films grew more quickly on the PP particles with increasing rotation speed of the reactor. This study shows that a rotating cylindrical PCVD reactor can be a good method to coat high-quality $TiO_2$ thin films uniformly on particles.