• 센서학회지
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• 제7권3호
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• pp.218-224
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• 1998

ZnO 분말과 $Al_{2}O_{3}$ 분말을 1 : 1의 mole 비로 ball milling 시킨 후, 압착하여 펠렛을 제작하였다. 소성시 분위기를 진공으로 유지하기 위하여 각각 $3{\times}10^{-5}$ Torr의 진공도로 석영관에 봉입한 다음 $900^{\circ}C{\sim}1200^{\circ}C$로 소성하였다. 실험결과, $900^{\circ}C{\sim}1100^{\circ}C$까지는 ZnO, $Al_{2}O_{3}$ 및 $ZnAl_{2}O_{4}$의 혼합구조를 보이다가 $1200^{\circ}C$에서 (311), (220)면등의 주된 피크를 갖는 다결정으로 성장하여 $ZnAl_{2}O_{4}$ 삼원화합물의 구조가 확인되었고, 전자현미경촬영에 의해 화합물의 결정화된 입자들이 관찰되었다. 광흡수측정에 의해 에너지 밴드갭은 약 4.53 eV로 계산되었으며, PL 스펙트럼은 소결온도의 상승에 따라 단파장영역으로 이동하여, $1200^{\circ}C$에서 430nm부근에서 발광피크를 보였다.

• 한국전기전자재료학회논문지
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• 제17권4호
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• pp.422-425
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• 2004

In this study, the AZO thin films were prepared as a function of oxygen gas flow ratio at room temperature by FTS(Facing Targets Sputtering) apparatus using Zn:Al(metal)-Zn:Al(metal) or Zn(metal)-ZnO:Al(ceramic). The film thickness, crystalline and electric properties of AZO thin film was evaluated by $\alpha$-step, XRD and 4-point probe. In the results, the resistivity of AZO thin film was shown the lowest value about 8${\times}$10$^{-2}$ $\Omega$-cm(Zn:Al-Zn:Al), 3${\times}$10$^{-1}$ $\Omega$-cm(Zn-ZnO:Al) at the oxygen gas flow ratio 0.3. And the AZO thin film has good crystalline at oxygen gas flow ration 0.4, using Zn:Al-Zn:Al targets.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.207-212
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• 1998

By comparison of the experimental results in two systems of ZnO varistors, it's appear that Sb2O3 is the indispensable element for twining in ZnO varistors and the Zn7Sb2O12 spinel acts as the nucleus to form twins. Al2O3 is not the origin of twining in ZnO varistor, but it was found that Al2O3 could strengthen the twining and form a deformation twining by ZnAl2O4 dragging and pinning effect. The inhibition ratios of grain and nonuniformity of two systems ZnO varistors increase with the increase of Al2O3 content. The twins affect the inhibition of grain growth, the mechanism could be explained follow as: twins increase the mobility viscosity of ZrO grain and grain boundary, and drag ZrO grain and liquid grain boundary during the sintering, then the grain growth is inhibited and the microstructure becomes more uniform.

• 한국세라믹학회지
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• 제19권4호
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• pp.287-292
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• 1982

Nonohmic properties of ZnO ceramics with various small amounts of additives were studied in relation to experimental methods, additive contant and sintaring temperature. The kinds of additives used to following chemicals were basic additives ($0.5Bi_2O_3$, $0.3BaCO_3$, $0.5MnCO_3$, $0.5Cr_2O_3$, $0.1KNO_3$), $TiO_2$ and $Al(OH)_3$. Expecially, this study has focused on the effectsof $TiO_2$ and $Al(OH)_3$ in ZnO ceramics with the basic additives. SEM studies indicated that the addition of TiO2 promoted grain growth but retarded grain growth with the addition of $Al(OH)_3$. Also, in the case of calcination of ZnO with $TiO_2$ and ZnO with $Al(OH)_3$ previously, grain size of ZnO with $TiO_2$ was larger and that of ZnO with Al(OH)3 was smaller in comparison to the case with out calcination. From the viewpoint of nonohmic exponent and nonohimic resistance, electrical characteristics of ZnO, $TiO_2$ and the basic additives was more effective than that of ZnO, $Al(OH)_3$ and the basic additives. Nonohmic exponent and nonohmic resistance of ZnO, $TiO_2$ and the basic additives was 11-13 and 40-65 respectively.

• 한국전기전자재료학회논문지
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• 제21권6호
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• pp.575-579
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• 2008

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ of by RF magnetron sputtering. Target was ZnO ceramic mixed with 2 wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-3}$, mobilities from 0.194 to $2.3\;cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4\;{\Omega}cm$. p-type sample has density of $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. XPS spectra show that Ols has O-O and Zn-O structures and Al2p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• 한국세라믹학회지
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• 제45권5호
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• pp.256-262
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• 2008

$ZnAl_{1-x}\;Cr_xO_4$ solid solutions were synthesized as pink pigments with and without mineralizer. The pigments were examined to optimize color development conditions of temperature and $Cr_2O_3$ contents. The characteristics of synthesized pigments were analyzed by XRD, XPS, FT-IR and UV-vis spectrophotometer. While samples without mineralizer fired at $1300^{\circ}C$, showed $ZnAl_2O_4$ and $ZnCr_2O_4$ spinel in XRD analysis. While samples with mineralizer resulted in $ZnAl_2O_4$. As a results, the pigments show pink color and most effective pink color was obtained at X=0.15 and $1250^{\circ}C$ when mineralizer was used. The chromatic coordinates are $L^*$ 58.61 $a^*$ 24.48, and $b^*$ 9.60.

• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1017-1024
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• 2000

Effect of the microwave dielectric properties and the microstructure on a mole fraction(x=0.1~0.9) of (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ ceramics was investigated. When (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$(x=0.1~0.9) ceramics were sintered at 130$0^{\circ}C$, 135$0^{\circ}C$ and 140$0^{\circ}C$ for 2hr, the microwave dielectric properties were obtained $\varepsilon$r=6.8~8.3, Q.f$_{0}$=36000~77600. On the other hand, the temperature coefficients of resonant frequency($\tau$$_{f}$) were obtained in the properties of -62ppm/$^{\circ}C$ to -49ppm/$^{\circ}C$. In order to adjust the temperature coefficient of resonant frequency($\tau$$_{f}$), CaTiO$_3$was added in (1-x)Mg$_2$SiO$_4$-xZnAl$_2$O$_4$ceramics. 0.7Mg$_2$SiO$_4$-0.2ZnAl$_2$O$_4$-0.1CaTiO$_3$ceramics sintered at 135$0^{\circ}C$ for 2hr showed the excellent microwave dielectric properties of $\varepsilon$r=7.7, Q.f$_{0}$=32000, and $\tau$$_{f}$=-7.9 ppm/$^{\circ}C$.EX>.>.EX>.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.408-409
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• 2007

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ by RF magnetron sputtering. Target was ZnO ceramic mixed with 2wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}\;to\;4.04{\times}10^{18}cm^{-3}$, mobilities from 0.194 to $2.3cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4{\Omega}cm$. P-type sample has density of $5.40cm^{-3}$ which is smaller than theoretically calculated value of $5.67cm^{-3}$. XPS spectra show that O1s has O-O and Zn-O structures and A12p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.

• 한국세라믹학회지
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• 제33권9호
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• pp.985-994
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• 1996

The initiation and growth of $\alpha$-Al2O3/metal composites by the directed oxidation of molten commercial AlZnMg-alloy at 1223-1423K were investigated. Spontaneous bulk growth did not occur on the alloy alone. but the uniform initiation and growth of the composite were obtained by putting a thin layer of SiO2 particles on the surface of the alloy. Without SiO2 the external surface of the oxide layer was convered by MgO and MgAl2O4. But with the SiO2 reaction initiate the porous ZnO layers were found on the growth surface. The higher process temperature yielded a lower metal content. The oxidation product of $\alpha$-Al2O3 was found to be oriented with c-axis parallel to th growth direction. The growth rates increased with temperature and the apparent activation energy was 111.8 kJ/mol.

• 한국재료학회지
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• 제14권5호
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• pp.328-333
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• 2004

Transparent ZnO:Al conductor films for the optoelectronic devices were deposited by using the capacitively coupled DC magnetron sputtering method. The effect of Al doping concentration and discharge power on the electrical and optical properties of the films was studied. The film resistivity of $8.5${\times}$10^{-4}$ $\Omega$-cm was obtained at the discharge power of 40 W with the ZnO target doped with 2 wt% $Al_2$$_O3$. The transmittance of the 840 nm thick film was 91.7% in the visible waves. Increasing doping concentration of 3 wt% $Al_2$$O_3$ in ZnO target results in significant decrease of film resistivity, which may be due to the formation of $Al_2$$O_3$ particles in the as-deposited ZnO:Al film and the reduced ZnO grain sizes. Increasing DC power from 40 to 60 W increases deposition rate by more than 50%, but can induce high defect density in the film, resulting in higher film resistivity.