• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.50.2-50
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• 2002

• Environmental Analysis Health and Toxicology
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• v.23 no.2
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• pp.139-141
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• 2008

Tissue distribution of $SiO_2$ nanopaprticles was investigated in mice after oral administration or skin treatment. ICR Male mice were treated with $SiO_2$ nanoparticles 2.5 g/kg/day for five consecutive days and sacrificed at 24 hours after the last administration. As results, the orally administered $SiO_2$ nanoparticels were distributed in the testis and kidney but not in lung at 24 hours after the last treatment. In case of skin treatment, $SiO_2$ nanoparticles were distributed to lung as well as testis, brain, kidney and liver. The results suggested that $SiO_2$ nanoparticles (12 nm) are easily absorbed through entero-gastric system or skin.

• Journal of the Korean Ceramic Society
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• v.25 no.6
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• pp.704-712
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• 1988

In order to investigate the effect of the second phase on Al2O3 matrix, SiC whisker was dispersed in Al2O3 matrix as a second phase over the content range of 5vol% to 20vol%. To this mixture, Y2O3 or TiO2 powder was added as a sintering additive before isostatically pressing and pressureless sintering at 1800-190$0^{\circ}C$ for 90min in N2 atmosphere. With increasing SiC whisker content, relative densities of composites were decreased and the grain growth of Al2O3 was restricted. When Y2O3 was added as a sintering aid the sintering temperature was 180$0^{\circ}C$, the maximum values of flexural strength, hardness and fracture toughness were 537MPa, 12.1GPa, 3.7MPa.m1/2, respectively. However, when the sintering temperature was elevated to 190$0^{\circ}C$, maximum values of flexural strength, hardness and fracture toughness were 453MPa, 17.5GPa, 4.9MPa.m1/2, respectively. Improved mechanical properties are assumed to be attributed to the crack deflection by the second phase SiC whisker and whisker pullout mechanism.

• Economic and Environmental Geology
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• v.5 no.2
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• pp.77-86
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• 1972

The system NaAlSiO_4-KAlSiO_4-SiO_2-H_2O, Bowen's "Petrogeny's Residua System" of course is extremely important in understanding the phase relationships of igneous and metamorphic rock in the continental crust. The phase relationships in this system, however, have not been completely established in the P-T range above the Mohorovicic discontinuity. They need to be established. In this study, the most probable sequence of P-T curves around a quaternary invariant point(~5Kb/${\sim}635^{\circ}C$) in the system using Schreinemakers' rule, is deduced, essentially on the basis of Morse's(1969a and b) experimental data. Possible modifications of the sequence of the P-T curves considering likely changes of the invariant chemogram are also considered. It is concluded that the sequence of P-T curves around the invariant point (~5Kb/${\sim}635^{\circ}C$) is (L), (Anl), (Or), (V), (Ne) and (Ab) on the P-T projection, where the P-T curve (L) is extended towards lower P-T regions, and the (Anl) curve is extended towards a region of higher temperature and lower pressure from the invariant point respectively.

• Journal of the Korean institute of surface engineering
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• v.36 no.5
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• pp.406-412
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• 2003

FT-IR and thermography were used to investigate the infrared radiation characteristic of SiO$_2$ film and SiO$_2$/Fe$_2$O$_3$film coated on aluminum. Through FT-TR spectrum, SiO$_2$film showed high infrared absorption in accordance with the stretching vibration of Si-O-Si, and as$ Fe_2$$O_3$was mixed additional absorption band appeared resulting from the stretching vibration of Fe-O at $590cm^{-1}$ and the bond of Si-O-Fe at $900 cm^{-1}$ The two kinds of film measured by the integration method and the reflective method coincided with each other in the wavelength area of infrared absorption and radiation, and corresponded well with Kirchhoff's law as the infrared emissivity is high in wavelength where infrared absorption rate is high. The emissivity of $SiO_2$ film was 0.65 and that of $SiO_2$/Fe$_2$$O_3$film was 0.77, so the addition of$ Fe_2$$O_3$ raised the infrared emissivity by approximately 13%.$ SiO_2$$Fe_2$$O_3$ film is efficient as an infrared radiator at below $100^{\circ}C$. The temperature of heat radiation after 7 minutes was 117$^{\circ}C$ in aluminum plate and $155^{\circ}C$ in $SiO_2$$Fe_2$$O_3$ film, $38^{\circ}C$ higher than the former.

• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.7-12
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• 1995

When a $Ta_O_5$ dielectric film is deposited on a bare silicon, the growth of $SiO_2$ at the $Ta_O_5$/Si interface cannot be avoided. Even though the $SiO_2$ layer is ultrathin (a few nm), it has great effects on the electrical properties of the capacitor. The concentration depth profiles of the ultrathin interfacial $SiO_2$ and $SiO_2/Si_3N_4$ layers were obtained using an Auger electron spectroscopy (AES) equipped with a cylindrical mirror analyzer (CMA). These AES depth profiles were quantitatively analyzed by comparing with the theoretical depth profiles which were obtained by considering the inelastic mean free path of Auger electrons and the angular acceptance function of CMA. The direct measurement of the interfacial layer thicknesses by using a high resolution cross-sectional TEM confirmed the accuracy of the AES depth analysis. The $SiO_2/Si_3N_4$ double layers, which were not distinguishable from each other under the TEM observation, could be effectively analyzed by the AES depth profiling technique.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.2
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• pp.23-27
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• 1976

$Si{\cdot}SnO_{2}$ heterojunction was prepared by oxidzing at oxygen atmosphere $SnO_{2-X}$ Which made by Flith evaporation of $SnO_{2}$ powder on III surface of p and n type Si single crystals. The energy band Profile of $Si{\cdot}SnO_{2}$ heterojunction was depicted from its physical properties. This heterojunction was very good rectifying junction, very sensitive in spectral response of Photovoltage at from 400nm to 1200nm, and -10$^{18}$sec of time contant. From above properties, this heterojunction was found ps good high speed photovoltaic device and solar cell.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2000.04a
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• pp.109-115
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• 2000

In the present study, (10%$Al_2O_3$+5%Si)/AZ91 Mg hybrid composite was fabricated using the squeeze casting method. During squeeze casting, molten Mg was infiltrated into the preform of 10%$Al_2O_3$+5%Si and reaction product of $Mg_2Si$ intermetallic compound was formed by the reaction between molten Mg and Si powder. Microstructure has been observed and mechanical properties were evaluated for the reaction squeeze cast (RSC) hybrid composite. It was found that Si powder totally reacted with molten Mg to form $Mg_2Si$. Reinforcement ($Al_2O_3$) and the reaction product ($Mg_2Si$) are fairly uniformly distributed in Mg matrix for the squeeze cast hybrid composite. Mechanical properties were improved with hybridization of reinforcements, namely higher hardness and enhanced wear resistance comparing squeeze cast (15%$Al_2O_3$)/AZ91 Mg composite.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.5
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• pp.660-665
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• 2001

Ultrafine particles have been widely used in many high technology industrial areas. The spherical nonagglomerated and uniform nanometer-size SiO$_2$particles are synthesized by the direct injection of TEOS(Tetraethyorthosilicate) using electro-hydrodynamic spraying method. Electro-hydrodynamic spraying can generate submicron-size TEOS droplets having high electric charges by applying a high electric field between the liquid injection nozzle and the reaction tube. These TEOS droplets are evaporated, and thermally decomposed or oxidized to produce nanometresized SiO$_2$particles in the reaction tube. Spherical, nonagglomerated and ultrafine particles are generated in various conditions and examined by using SEM and SMPS. As the total gas flow rate in the furnace changes from 1.5 lpm, the mean diameter of SiO$_2$particle decreases from 120 nm to 68 nm. The synthesized particle charging fractions are also investigated.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.211-215
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• 2006

평면 광도파로 코어로 사용되는 SiON (Silicon oxynitride)과 클래딩으로 사용되는 $SiO_2$ (Silicon oxide)의 굴절률 차이가 2.5 %인 고굴절률차 평면 광도파로용 SiON 박막을 PECVD (plasma enhanced chemical vapor deposition)로 제작하였다. PECVD에 사용된 가스는 $SiH_4,\;NH_3,\;N_{2}O$이고, Si 기판의 $SiO_2$ 막은 100 nm이다. 가스의 비율에 따라 SiON 막의 굴절률은 633 nm의 파장에서 1.476에서 1.777까지 변화하였다. 코어로 사용되는 SiON의 두께는 $2.5{\mu}m$이고 클래딩과의 굴절률 차이는 2.5 %였다.