• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.282-282
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• 2013

The antimony sulfide ($Sb_2S_3$) thin films were deposited using the gas phase method which known as atomic layer deposition (ALD) on mesoporous micro-films. Tris (dimethylamido) antimony (III[$(Me_2N)_3Sb$] and hydrogensulfide ($H_2S$) were used as precursors to deposit $Sb_2S_3$. Self-terminating nature of $(Me_2N)_3Sb$ and $H_2S$ reaction were demonstrated by growth rate saturation versus precursors dosing time. Absorption spectra and extinction coefficient were investigated by UV-VIS spectroscopy. Scanning electron microscopic analysis and X-ray photoelectron spectroscopy (XPS) depth profile were employed to determine the conformal deposition.

• Bulletin of the Korean Chemical Society
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• 제11권5호
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• pp.464-466
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• 1990

A ternary Zintl phase material of the formula $K_2Ga_2Sb_4$ has been prepared directly from reaction of the elements following a high temperature procedure. The compound consists of potassium ions and planar ribbons of $(Ga_2Sb_4^{-2})_{\infty}$ consisting of five membered $[Ga_2Sb_3]$ rings bridged by Sb atoms. The variable temperature specific resistivity measurements show the material to be an intrinsic semiconductor.

• Tribology and Lubricants
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• 제13권1호
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• pp.34-41
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• 1997

Frictional behavior of three automotive friction materials (brake pads) containing different amounts of antimony trisulfide ($Sb_2S_3$) and zirconium silicate ($ZRSiO_4$) were investigated using a front brake system. The friction materials were tested on a brake dynamometer (dyno) with gray cast iron rotors. The dynamometer(dyno) test simulated the dragging of a ehicle maintaining 70 km/h and vehicle stops from 100 km/h using 20 different combinations of initial brake temperature (IBT) and input pressure (IP). The results showed a strong influence of the relative amount of $Sb_2S_3$ and $ZrSiO_4$ in friction materials on friction characteristics. Friction stability was improved with the higher concentration of $Sb_2S_3$ in the friction material. Torque variation during drag cycle was increased with an increase of the $ZrSiO_4$ concentration in the friction material. Average friction coefficient and the wear rate of the friction material increased by using more aggressive friction materials containing more $ZrSiO_4$ and less $Sb_2S_3$. Generation of the disk thickness variation (DTV) increased when friction materials with higher concentration of $ZrSiO_4$ were used Careful examination of DTV change showed that aggressiveness of the friction material played an important role in determining torque variation.

• 한국환경과학회:학술대회논문집
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• 한국환경과학회 2008년도 추계학술발표회 발표논문집
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• pp.482-487
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• 2008

성능이 우수한 다성분계 전극을 개발하기 위하여 Ru를 주 전극성분으로 Pt, Sn, Sb 및 Gd를 보조 전극성분으로 하여 3, 4성분계 전극의 성능과 산화제 생성량 및 전극 표면 분석을 행하여 다음의 결과를 얻었다. 1. 2분 동안 단위 W당 제거된 RhB 농토는 Ru:Sn:Sb=9:1:1 > Ru:Pt:Gd=5:5:1 > Ru:Sn=9:1 > Ru:Sn:Gd=9:1:1 > Ru:Sb:Gd=9:1:1로 나타났다. Ru:Sn:Sb=9:1.1 전극에서 발생하는 free Cl, ClO$_2$ 및 H$_2$O$_2$농도가 다른 전극보다 높은 것으로 나타나 산화제 생성경향과 RhB 분해율과는 상관관계가 있는 것으로 사료되었다. 4성분계 전극 중에서 Ru:Sn:Sb:Gd 전극의 성능이 가장 우수한 것으로 나타났으나 3성분계 전극인 Ru:Sn:Sb=9:1.1 전극보다 성능이 떨어지는 것으로 나타났다. Ru:Sn:Sb=9:1:1 전극에서 생성되는 산화제 농도가 다른 두 종류의 산화제 농도보다 높은 것으로 나타났고 4성분 전극의 경우 Ru:Sn:Sb:Gd 전극의 산화제 농도가 Ru:Sn:Sb:Gd 전극이 높거나 유사한 경우로 나타나 산화제 생성 경향과 RhB분해 능과는 상관관계가 있는 것으로 나타났다. 초기 RhB 분해 속도가 높은 전극의 COD 제거율도 높은 것으로 나타났다. OH 라디칼은 발생하지 않지만 염소계 산화제 농도가 높고 RhB제거율이 높아 Ru를 주 성분으로 한 전극의 RhB분해는 주로 간접 산화작용에 의한 것이며, 개발된 3, 4성분계 산화물 전극은 간접 산화용 전극임을 알 수 있었다. 에칭을 하기 전의 Ti판은 표면이 매끄러운 것으로 나타났으며, 35% 염산으로 에칭한 후의 Ti메쉬는 매우 거친 표면조직을 가지는 것을 관찰할 수 있었다. Ru:Sn:Sb=9:1:1 전극과 Ru:Sn:Sb:Gd 전극의 SEM 사진을 관찰한 결과 두 전극 모두 전극 물질이 균일하게 도포되어 있었으며, 두 전극 모두 열소성을 통해 전극 성분을 코팅할 때 발생하는 "mud crack"이 발생한 것이 관찰되었다 EDX 분석에서 Cl이 관찰되었는데, 전극 성분의 불완전 산화로 인한 비양론적 산화물 때문이며 이는 RhB 분해성능과 관련 있는 것으로 사료되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.369-372
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• 2004

The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using $Sb_2O_3$ were investigated to get a reliable process. TW(Thema Wave) and Rs(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of Rs varied significantly to investigate the variation of instruction accurately.

• 한국전기전자재료학회논문지
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• 제23권11호
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• pp.854-858
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• 2010

In this study, we have investigated the effects of Cr dopant on the sintering and electrical properties of ZnO-$Sb_2O_3$ (ZS) ceramics for varistor application. Spinel phases including $\alpha-$ and $\beta$-type was formed at ZS system and $\alpha$-spinel was stabilized by Cr doping in ZS system. Densification of ZS and ZSCr system was retarded to $1000^{\circ}C$ by the formation of spinel at $800^{\circ}C$. The morphology and its distribution of spinel phases in ZS system was homogeneous but disturbed by Cr doping. In ZSCr the densification of ZnO compared with ZS system was more retarded by low concentration of Zn interstitial defects induced by Cr doping in addition to the effect of spinel phase formation. The defects in each system were identified as attractive coulombic center (ZS: 0.13 eV, ZSCr: 0.12 eV) and singly charged oxygen vacancy $V_0^{\cdot}$ (ZSCr: 0.33 eV). In all ZS and ZSCr system have week varistor behavior by the formation of double Schottky barrier at grain boundary but its stability of barrier was very sensitive to sintering temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.172-173
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• 2008

In this study, $0.95(K_{0.5}Na_{0.5})NbO_3$-0.05Li$(Sb_{0.8}Nb_{0.2})O_3$ + $Ag_2O$ + x wt% $MnO_2$ were investigated as a function of the amount of $MnO_2$ addition in order to improve dielectric and piezoelectric properties of Lead-free piezoelectric ceramics. With increasing the amount of $MnO_2$ addition, density and electromechanical coupling factor $(k_p)$ increased up to 0.3wt.% $MnO_2$ and decreased above 0.3wt.% $MnO_2$. At the sintering temperature of 1020 $^{\circ}C$, Electromechanical coupling factor $(k_p)$, density, dielectric constant $({\varepsilon}r)$ and mechanical quality factor $(Q_m)$ of composition ceramics with 0.4wt% $Ag_2O$ addition showed the optimal value of 0.431, 4.33 g/$cm^3$, 820 and 119, respectively.

• 한국전기전자재료학회논문지
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• 제28권4호
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• pp.229-233
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• 2015

In this paper, in order to develop outstanding Pb-free piezoelectric composition ceramics, the $(Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3+0.3wt%Bi_2O_3+0.4wt%Fe_2O_3+xwt%CuO$ (x= 0~0.8 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effects of CuO-doping on the structure and electrical properties of the NKL-NST ceramics were systematically studied. The results show that the ceramics exhibit a pure perovskite structure with orthorhombic phase at room temperature, and secondary phase was found in the ceramics. The 0.4 wt%CuO added ceramics sintered at $950^{\circ}C$ showed the optimum properties of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient(kp) and mechanical quality factor(Qm) : $d_{33}=213$[pC/N], kp= 0.43, Qm= 423,respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권3호
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• pp.146-152
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• 2011

Thermal stability of $Ge_2Sb_2Te_5$ (GST) and $SiO_2$ doped GST (SGST) films for phase change random access memory applications was investigated by observing the change of surface roughness, layer density and composition of both films after isothermal annealing. After both GST and SGST films were annealed at $325^{\circ}C$ for 20 min, root mean square (RMS) surface roughness of GST was increased from 1.9 to 35.9 nm but that of SGST was almost unchanged. Layer density of GST also steeply decreased from 72.48 to 68.98 $g/cm^2$ and composition was largely varied from Ge : Sb : Te = 22.3 : 22.1 : 55.6 to 24.2 : 22.7 : 53.1, while those of SGST were almost unchanged. It was confirmed that the addition of a small amount of $SiO_2$ into GST film restricted the deterioration of physical and chemical properties of GST film, resulting in the better thermal stability after isothermal annealing.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 하계학술대회 논문집
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• pp.204-208
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• 1991

In this paper, the radiation properties of a far-Infrared using a PTC thermistor, the $BaTiO_3$+1.63mol% $Al_2O_3$+3.75mol% $SiO_2$+1.25mol% $TiO_2$(1/3 $Al_2O_3+xSiO_2$+(1-x) $TiO_2$; total x: 6.67mol%) ceramics, in order to progress the grade resistivity characteristics, by adding an ethanol solution of $Mn(NO_3){\cdot}6H_2O$ was investigated. The ceramics was fabricated by wet-mill method. The sintering temperature read 1300-1350$[^{\circ}C]$ and the holding time was 3 hours. The quantity of $Sb_2O_3$ and $Al_2O_3$ for an activation of the far-infrared radiation in ceramics was doped. In sintering, R-T property was measured by varying the grade temperature. The anatase-lighting apparatus and microstructures by using XRD and SEM were observed. $Sb_2O_3$. oxides additive. affected the semiconducting and emissivity and MnO was devoted an increase of resistivity. The specimen which only $Sb_2O_3$ is added to was high appeared far-infrared emissivity and Mno was not affacted the far-infrared radiation. The ceramics shows that it is effective in the structure of the human bodies as organic bodies and can be applied as electron device.