Bulletin of the Korean Chemical Society

Korean Chemical Society (대한화학회)
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Semiconducting Behavior in the Polymeric Zintl Phase Material $K_2Ga_2Sb_4$

  • Wu, Biao (Department of Chemistry, Yonsei University) ;
  • Birdwhistell, Teresa L.T. (Department of Chemistry, Yonsei University) ;
  • Jun, Moo-Jin (Department of Chemistry, Yonsei University) ;
  • O'Connor, Charles J. (Department of Chemistry, University of New Orleans, and Yonsei University)
  • Published : 1990.10.20
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Abstract

A ternary Zintl phase material of the formula $K_2Ga_2Sb_4$ has been prepared directly from reaction of the elements following a high temperature procedure. The compound consists of potassium ions and planar ribbons of $(Ga_2Sb_4^{-2})_{\infty}$ consisting of five membered $[Ga_2Sb_3]$ rings bridged by Sb atoms. The variable temperature specific resistivity measurements show the material to be an intrinsic semiconductor.

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  1. ChemInform Abstract: Semiconducting Behavior in the Polymeric Zintl Phase Material K2Ga2Sb4. vol.22, pp.12, 1990, https://doi.org/10.1002/chin.199112009
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  3. Selective ionization of group I elements from laser ablated plumes of Rb⋅Ga⋅Sb, K3Ga3As4, and K4In4As6 vol.83, pp.9, 1998, https://doi.org/10.1063/1.367300