• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.476-480
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• 2004

The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using Sb$_2$O$_3$were investigated to get a reliable process. TW(Thema Wave) and R$_{s}$(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of R$_{s}$ varied significantly to Investigate the variation of instruction accurately.

• Journal of Powder Materials
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• v.17 no.4
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• pp.336-341
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• 2010

The present study focused on the synthesis of Bi-Sb-Te-based thermoelectric powder by an oxidereduction process. The phase structure, particle size of the synthesized powders were analyzed using XRD and SEM. The synthesized powder was sintered by the spark plasma sintering method. The thermoelectric property of the sintered body was evaluated by measuring the Seebeck coefficient and specific electric resistivity. The $Bi_{0.5}Sb_{1.5}Te_3$ powder had been synthesized by a combination of mechanical milling, calcination and reduction processes using mixture of $Bi_2O_3$, $Sb_2O_3$ and $TeO_2$ powders. The sintered body of the $Bi_{0.5}Sb_{1.5}Te_3$ powder synthesized by an oxide-reduction process showed p-type thermoelectric characteristics, even though it had lower thermoelectric properties than the sintered body of the $Bi_{0.5}Sb_{1.5}Te_3$ thermoelectric powder synthesized by the conventional melting-crushing method.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.309-314
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• 1988

In this study, the effect of the size of sintered body on resonant and filter characteristics in Pb(Sn1/2Sb1/2)O3-PbTiO3 piezo-electric system were investigated. The attenuation characteristics of ring-dot type and ladder type filter were also investigated. As the size of sintered body was decreased, the resonant characteristic(Fr, Fa) and the center frequency(Fo) were increased. As the poling field was increased, the Kp and bandwidth were increased. The big difference between rign-dot type and ladder type was the sharpness of bandwidth, selectivity and the movement of center frequency.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.514-520
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• 1997

A single component of $Sb_2O_3$ glass has been obtained by a rapid quenching method in vacuum. The linear refractive indices were measured as a function of wavelength from 500 nm to 1060 nm. The refractive index at $n_{3{\omega}}$/(633 nm) was as high as 2.00. The optical band gap was estimated as 3.38 eV from the optical absorption spectrum. The third-order nonlinear optical intensity was determined by the third harmonic generation (THG) method. The $\chi^{(3)}$value was as high as $5.68{\times}10^{-13}$esu, about 20 times larger than that of $SiO_2$ glass.

• Journal of the Optical Society of Korea
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• v.16 no.4
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• pp.414-417
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• 2012

The effect of cerium concentration and the addition of $Sb_2O_3$ on the light emission of cerium-contained glass were investigated. The glass matrix composition was $20Y_2O_3-25Al_2O_3-55SiO_2$, the $CeO_2$ concentration ranged from 0.05 to 0.5 mol%, and $Sb_2O_3$ was added at concentrations of 0.02 to 0.1 mol%. The $Ce^{3+}$ and $Ce^{4+}$ absorption bands were observed at approximately 330 nm and 240 nm, respectively. A broad emission band at 400 nm, due to the 4f-5d transition of the $Ce^{3+}$ ion, was observed under illumination by a UV light at 330 nm. The photoluminescence intensity of $Ce^{3+}$ had a maximum value at a $CeO_2$ concentration of 0.1 mol%. Adding $Sb_2O_3$ decreased the $Ce^{4+}$ absorption intensity and enhanced the light emission intensity of $Ce^{3+}$ by about 45%.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.295-301
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• 2000

The effect of V2O5 addition on the low temperature sintering of Pb(Mn1/3Sb2/3)O3-PZT ceramics, which is known as a prominent material for piezoelectric transformer application was studied, and the densification behavior and piezoelectric characteristics of the samples as a function of heating rate were also examined. V2O5 led the system to liquid phase sintering by forming liquid phase during sintering, which accelerated densification through the particle rearrangement in the early stage of sintering. The liquid phase mostly existed at grain boundaries retarded the evaporation of PbO, while the densification temperature and the weight loss of V2O5-free samples were higher than those of samples with V2O5. Faster heating improved the densification of the samples regardless of V2O5 addition. The low temperature sintering at 100$0^{\circ}C$ was achieved in PMS-PZT ceramics with high density and reasonable dielectric and piezoelectric characteristics. This result revealed optimistic way to the development of multi-layered piezoelectric transformers.

• Proceedings of the Korean Ceranic Society Conference
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• 2002.10a
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• pp.162.2-162
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• 2002

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1057-1060
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• 2001

By comparison of the experimental results in two systems of ZnO varistors, its appear that Sb$_2$O$_3$is the indispensable element for twinning in ZnO varistors, and the Zn$_{7}$Sb$_2$O$_{12}$ spinel acts as the nucleus to form twins. A1$_2$O$_3$is not the origin of twinning in ZnO varistor, but it was found that A1$_2$O$_3$could strengthen the twinning and form a deformation twinning by ZnA$_{12}$O$_4$-dragging and pinning effect. The inhibition ratios of grain growth and nonuniformity of two systems ZnO varistors increase with the increase of A1$_2$O$_3$content. The twins affect the inhibition of grain growth, the mechanism could be explained follow as : twins increase the mobility viscosity of ZnO grain and grain boundary, and drag ZnO grain and liquid grain boundary during the sintering, then the grain growth is inhibited, and the microstructure becomes more uniform.orm.m.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.361-366
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• 2014

$MnO_2$-doped $0.985[Li_{0.04}(Na_{0.545}K_{0.46})_{0.96}(Nb_{0.81}Ta_{0.15}Sb_{0.04})]O_3+0.015KNbO_3(0.985LNKNTS+0.015KNbO_3)$ lead-free ceramics were fabricated by conventional solid state method to develop excellent dielectric and piezoelectric properties. The result of X-ray diffraction patterns obviously indicated that all of the specimen has pure perovskite structure without secondary phase. In addition, orthorhombic phase and coexistance region of orthorhombic-tetragonal phase (MPB) were observed with amount of $MnO_2$. The optimal values of ${\rho}$=4.70 $g/cm^3$, $d_{33}=238$ pC/N, $k_P=0.46$, $Q_m=121$, ${\varepsilon}_r=849$, and $T_C=225^{\circ}C$ were obtained at 0.01 mol% $MnO_2$ doped $0.985LNKNTS+0.015KNbO_3$ ceramics sintered at $990^{\circ}C$ for 5 h, respectively. Hence, it was indicated that the suitable amount of $MnO_2$ could improve the electrical properties of $0.985[Li_{0.04}(Na_{0.545}K_{0.46})_{0.96}(Nb_{0.81}Ta_{0.15}Sb_{0.04})]O_3+0.015KNbO_3$ ceramics.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.51-57
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• 2010

Thermoelectric properties of the p-type $(Bi,Sb)_2Te_3$, hot-pressed with the $(Bi,Sb)_2Te_3$ powders fabricated by melting/grinding method, were characterized with variation of the hot-pressing conditions. Thermoelectric characteristics of the hot-pressed $(Bi,Sb)_2Te_3$ were also analyzed with addition of $ZrO_2$ as nano inclusions. With increasing the hotpressing temperature from $350^{\circ}C$ to $550^{\circ}C$, Seebeck coefficient and electrical resistivity decreased from 275 ${\mu}V$/K to 230 ${\mu}V$/K and 6.68 $m{\Omega}$-cm to 1.86 $m{\Omega}$-cm, respectively. The power factor decreased with addition of $ZrO_2$ nano powders more than 1 vol%, implying that the optimum amount of $ZrO_2$ nano inclusions to get a maximum power factor would be less than 1 vol%.