• 한국진공학회지
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• 제22권6호
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• pp.327-334
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• 2013

InAs/GaSb 제2형 응력 초격자(strained layer type II superlattice, T2SL)을 이용한 nBn 구조 장적외선 검출소자의 설계 및 제작을 하였다. InAs와 GaSb 두께에 따른 T2SL 구조의 장적외선 밴드갭 에너지를 Kronig-Penney 모델을 이용하여 계산하였다. 소자의 암전류 밀도를 줄이기 위해서, nBn 구조에서 장벽층인 $Al_{0.2}Ga_{0.8}Sb$ 성장 중에 Te 보상도핑(compansated doping)을 하였다. 온도(T) 80 K 및 인가전압($V_b$) -1.5 V에서, 반응스펙트럼 측정을 통한 소자의 차단파장은 ${\sim}10.2{\mu}m$ (~0.122 eV)로 나타났다. 또한 온도 변화에 따른 암전류 측정으로부터 도출된 활성화 에너지는 0.128 eV로 계산 되었다. T=80 K 및 $V_b$=-1.5 V에서 암전류는 $1.0{\times}10^{-2}A/cm^2$으로 측정되었다. 흑체복사 적외선 광원을 이용한 반응도(Responsivity)는 소자 온도 80 K 및 인가전압 -1.5 V의 조건에서 0.58 A/W로 측정되었다.

• 한국전자파학회논문지
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• 제13권4호
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• pp.323-330
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• 2002

본 논문에서는 전자선 묘화 장비를 이용하여 게이트 길이가 0.2 $\mu$m인 PHEMT를 제작하여 특성을 분석하고, 임피던스정합 및 바이어스 회로를 위한 수동소자 라이브러리를 작성하여 BWLL용 MMIC 증폭기를 설계 및 제작하였다. 제작된 2단 MMIC 증폭기는 26.7 GHz에서 8.7 ㏈의 소신호 이득 및 -10 ㏈ 이하의 입 .출력 반사 계수를 얻었다. 제작된 2단 MMIC 증폭기의 팁 크기는 4.11$\times$2.66 $\textrm{mm}^2$ 이다.

• BMB Reports
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• 제33권4호
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• pp.321-325
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• 2000

Quinone reductase was purified to homogeneity from bovine liver by using ammonium sulfate fractionation, ionexchange chromatography, and gel filtration chromatography. The enzyme utilized either NADH or NADPH as the electron donor. The enzyme catalyzed the reduction of several quinones and other artificial electron acceptors. Furthermore, the enzyme catalyzed NAD(P)H-dependent reduction of azobenzene. The apparent Km for 1,4-benzoquinone and azobenzene was 1.64 mM and 0.524 mM, respectively. The reduction of azobenzene by quinone reductase was almost entirely inhibited by dicumarol or Cibacron blue 3GA, potent inhibitors of the mammalian quinone reductase. In the presence of 1.0${\mu}M$ Cibacron blue 3GA, azoreductase activity was lowered by 45%, and almost complete inhibition was seen above 2.0 ${\mu}M$ Cibacron blue 3GA.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.630-634
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• 2016

We report the computer aided design results for a GaSb/InAs broken-gap gate all around nanowire tunneling FET (TFET). In designing, the semi-empirical tight-binding (TB) method using $sp3d5s^*$ is used as band structure model to produce the bulk properties. The calculated band structure is cooperated with open boundary conditions (OBCs) and a three-dimensional $Schr{\ddot{o}}dinger$-Poisson solver to execute quantum transport simulators. We find an device configuration for the operation voltage of 0.3 V which exhibit desired low sub-threshold swing (< 60 mV/dec) by adopting receded gate configuration while maintaining the high current characteristic ($I_{ON}$ > $100 {\mu}A/{\mu}m$) that broken-gap TFETs normally have.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.68-71
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• 1996

In the study, the thermal and optical properties of SiO$_2$-PbO-K$_2$O-Al$_2$O$_3$ g1asses were investigated. According to Ga$_2$O$_3$ addictions, the properties of bulk glass, transition temperature and softening temperature were increased, whereas thermal expansion coefficient was decreased; In the optical properties, refractive index was increased, and IR cut-off wavelength was enlarged from 4.64$\mu\textrm{m}$ to 5.22$\mu\textrm{m}$. But, the optical loss of fiber was decreased.

• 전자공학회논문지A
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• 제32A권2호
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• pp.120-129
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• 1995

A new nethod, namely multi-gain-levering, is proposed to improve FM response of the single frequency semiconductor lasers and applied to 1.55$\mu\textrm{m}$ InGaAsP/InP MGL(multi-gain-levered)-MQW-DFB-LD. This device consists of three sections with different bandgap energy and can be easily realized by selective MOVPE growth. Our analysis based on Green function showed that a flat, red-shifted, high FM efficiency of aove 15GHz/mA can be extected by novel gain-levering scheme.

• 대한전자공학회논문지
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• 제24권5호
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• pp.804-812
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• 1987

1\ulcorner gate MESFETs are fabricated on MOCVD and VPE grown GaAs wafers using photolithography, chemical wet etching and lift-off techniques. DC characteristics such as Vt, Gm, Rs, etc. are studied and active channel parameters of MESFET(a, n, Leff, \ulcorner)are analyzed for 1-4 \ulcorner gate FETs and 100\ulcorner FAT FET. The correlation between DC data and active channel parameters are experimentally analyzed. The measured transconductance and low-field mobility in the active channel for the 1\ulcorner gate MESFET made on MOCVD wafer are 67mS/mm and 2980cm\ulcornerVs respectively.

• 대한전자공학회논문지
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• 제23권6호
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• pp.780-788
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• 1986

1.3\ulcorner GaInAsP BH(Buried Heterostructure) lasers were fabricated on the p-InP substrate. Two step chemical etching processes and melt-back etching technique during 2nd epitaxy were used for BH active layer. BH laser had the threshold current, Ith, of 72mA(23\ulcorner), peak wavelength of 1.2937\ulcorner, nd of 10-20%, and To of 85K. They operated in single mode under pulse condition up to 1.4 Ith. CW(DC) operation was successfully performed at room temperature.

• 한국재료학회지
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• 제8권5호
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• pp.450-456
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• 1998

후막 GaN성장에 있어서 uniformity와 controllability를 향상시키기 위해 $GaCI_{3}$를 이용한 수직형 HVPE(Hyderide Vapor Phase Epitaxy)를 자체 제작하여 후막 GaN의 성장특성을 조사하였다. 성장온도를 $1000^{\circ}C$에서 $1075^{\circ}C$까지 변화시키면서 성장된 GaN의 특성을 분석한 결과 온도가 증가할수록 표면특성과 광학적 특성은 향상되었으나 DCXRD( Double Crystal X-Ray diffractometer)의 FWHM(Full width of Half Maximum)은 온도와 무관하게 500-1000arcsec을 나타내었다. GaN의 성장이 1x1cm의 시편에 걸쳐 균일하게 이루어 졌으며, 또한 반응기 내부의 기하학적 특성이 시편의 표면특성과 성장속도에 많은 영향을 끼침을 알 수 있었다. 성장속도는 $GaCI_{3}$의 유량에 비례하였으나, $1000^{\circ}C$에서 $1075^{\circ}C$로 온도를 증가조건하에서 최대 28$\mu\textrm{m}$/hr의 GaN성장을 얻을 수 있었다.

• Journal of Magnetics
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• 제4권4호
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• pp.123-127
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• 1999

The Ga-stabilised $Sm_2Fe_{17-}$type alloy can hardly be disproportionated under ordinary HDDR condition. The HDDR characteristics of Ga-substituted $Sm_2Fe_{17-}$type alloy were examined, and, in particular, the effect of particle size on the disproportionation of the Ga-substituted alloy was investigated in detail. The reaction characteristics of the $Sm_2Fe_{17-}$type alloys with or without Ga-substitution with methane (CH4) gas are also examined. The Ga-stabilised $Sm_2Fe_{17-}$type alloy was able to be disproportionated significantly on heating up to 80$0^{\circ}C$ under hydrogen with normal pressure. The particle size influenced significantly on the disproportion-ation of the Ga-substitute alloy, and the materials with finer particle size (<40 ${\mu}{\textrm}{m}$) was fully disproportionated on heating up to around 80$0^{\circ}C$ under hydrogen gas with normal pressure. The Ga-substituted alloy has a very sluggish recombination kinetics with respect to the alloy without Ga-substitution. The $Sm_2Fe_{17}C_{x-}$type carbide was stabilised significantly by the Ga-substitution for Fe in the parent alloy. While the $Sm_2Fe_{17}C_x$ was disproportionated below 80$0^{\circ}C$ the Ga-stabilised $Sm_2Fe_{14}Ga_2C_x$ carbide remained intact even on heating up to 80$0^{\circ}C$.