• 한국의상디자인학회지
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• 제5권1호
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• pp.89-96
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• 2003

The court dancing suit, so-called "JeongJae(呈才) suit," has been worn by court dancers. Since the court dancing suits in the age of the ancient Three Kingdoms and Koryo Dynasty have already been studied previously, this study discussed the change of dancing suit styles created in the latter period of Chosun Dynasty, such as GaInJeonMok-Dan(佳人剪牧丹)ㆍGoGuRyeo-Mu(高句麗舞)ㆍGongMak-Mu(公莫舞)ㆍManSuMu(萬壽舞), and the thought of Yin-Yang and five elements(陰陽五行思想) that the colors of the court dancing suits imply. The purpose of this study is to understand the thoughts contained in the ancient suits as well as their styles in order to inherit and uphold our traditional culture properly. properly.

• 한국진공학회지
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• 제2권4호
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• pp.424-432
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• 1993

AlGaAs/InGaAs/GaAs pseudomorphic structures have been grown by atmosheric pressure-MOCVD . The Al incorporation efficiency is constant but slightly exceeds the Ga incorporation during the growth of AlGaAs layers at $650^{\circ}C$ . Meanwhile , the In incorporation efficiency is constant but slightly less than the Ga incorporation in InGAAs layers. InGaAs/GaAs QWs were grown and their optical properties were characterized . $\delta$-doped Al0.24Ga0.76As/In0.16 Ga0.84As p-HEMT structures were successfully grown by MOCVD and their transport properties were characterized by Hall effect and SdH measurements. SdH Measurements at 3.7K show clear magnetoresistance oscillations and plateaus in the quantum Hall effect confirming the existence of a two-dimensional electron gas(2DEG) and a parallel conduction through the GaAs buffer layer. The fabricated $1.5\mu\textrm{m}$gatelength p-HEMTs having p-type GaAs in the buffer layer show a high transconductance of 200 mS/mm and a good pinch-off characteristics.

• 대한전자공학회논문지SD
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• 제45권12호
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• pp.41-46
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• 2008

본 논문에서는 $0.1{\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT기술을 기반으로 하여 D-Band(110 - 140 GHz) 대역에서 동작하는 MMIC 2단 구동 증폭기를 제작하였다. 제작된 구동 증폭기는 밀리미터파 대역인 110 GHz에서 10 dB 이상의 우수한 $S_{21}$ 이득 특성을 보였으며, 이때 반사 특성 또한 $S_{11}$ -3.5 dB와 $S_{22}$ -6.5 dB로 양호한 특성을 얻었다. 이러한 높은 성능의 MMIC 구동증폭기의 특성은 주로 MHEMT 성능에 기인한다. 본 논문에서 적용한 $0.1{\mu}m$ MHEMT는 760 mS/mm의 전달컨덕턴스 특성과 195 GHz의 차단주파수 391 GHz의 최대공진 주파수 특성을 갖는다.

• 구강회복응용과학지
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• 제29권4호
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• pp.366-376
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• 2013

구강내 스캔(Group 1), 모델 광학 스캔(Group 2)과 모델 접촉식 스캔(Group 3)방식으로 각각 zirconia 코핑을 제작하여 광학 현미경으로 적합성을 관찰하였다. 측정항목은 변연오차(absolute marginal discrepancy;AMD), 변연간극(marginal gap; MG), 측방간격(gap of axial wall; GA), 선각간격(gap of line angle; GL)와 교합간격(gap of occusal surface; GO)이었으며, 결과는 아래와 같았다. 1. Group 1, Group 2, Group 3의 평균 AMD는 각 각 $141.21{\pm}42.94{\mu}m$, $140.63{\pm}31.64{\mu}m$, $109.37{\pm}28.42{\mu}m$이고, Group1, Group 2, Group 3의 MG는 각 각 $82.52{\pm}43.99{\mu}m$, $90.28{\pm}27.93{\mu}m$, $66.55{\pm}28.77{\mu}m$였다. AMD와 MG는 각 그룹에서 통계학적으로 유의한 차이를 보여주지 않았다(Anova test, P>0.05). 2. Group 2의 GA가 Group 1과 Group 3에 비해 통계학적으로 유의하게 적은 수치를 나타내었다(Anova test, P<0.05). 3. Group 1의 GL과 GO가 다른 그룹에 비해 통계학적으로 높은 수치를 나타내었다(Mann-whitney test(P<0.05). 세 가지 스캔 방식으로 제작된 zirconia 코핑은 세라믹 보철의 가장 중요한 평가 요소인 AMD와 MG에서 서로 통계학적 차이를 보이지 않았다.

• 한국결정성장학회지
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• 제11권3호
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• pp.106-111
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• 2001

The freestanding GaN substrates were grown by hydride vapor phase epitaxy (HVPE) on (0001) sapphire substrate and prepared by using laser induced lift-off. After a mechanical polishing on both Ga and N-surfaces of GaN films with 100$\mu\textrm{m}$ thick, their polarities have been investigated by using chemical etching in phosphoric acid solution, 3 dimensional surface profiler and Auger electron spectroscopy (AES). The composition of the GaN film measured by AES indicted that Ga and N terminated surfaces have the different N/Ga peak ratio of 0.74 and 0.97, respectively. Ga-face and N-face of GaN revealed quite different chemical properties: the polar surfaces corresponding to (0001) plane are resistant to a phosphoric acid etching whereas N-polar surfaces corresponding to(0001) are chemically active.

• Transactions on Electrical and Electronic Materials
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• 제8권3호
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• pp.115-120
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• 2007

Reliability between passivated and unpassivated process with the base-exposed InGaP/GaAs HBTs was studied. A passivation of HBT was attempted by $SiO_2$ thin film deposition at $300^{\circ}C$ by means of PECVD. Base-exposed InGaP/GaAs HBTs before and after passivation were investigated and compared in terms of DC and RF performance. Over a total period of 30 days, passivated HBTs show only 2% degradation of DC current gain for the high current density of $40KA/cm^2$. The measured thermal resistance of $2{\times}30{\mu}m^2$ single emitter InGaP/GaAs HBT passivated with PECVD $SiO_2$ devices can be extracted and was founded to be 1430 K/W. The estimated MTTF was $2{\times}10^7hr\;at\;T_j=125^{\circ}C$ with an activation energy $(E_a)$ of 1.37 eV.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.751-754
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• 2003

Metamorphic HEMTs (MHEMTs) have emerged as excellent challenges for the design and fabrication of high-speed HEMTs for millimeter-wave applications. Some of improvements result from improved mobility and larger conduction band discontinuity in the channel, leading to more efficient modulation doping, better confinement, and better device performance compared with pseudomorphic HEMTs. We have studied the calibration on the DC and RF characteristics of the MHEMT device using I $n_{0.53}$G $a_{0.47}$As/I $n_{0.52}$A1$_{0.48}$As modulation-doped heterostructure on the GaAs wafer. For the optimized device performance simulation, we calibrated the device performance of 0.1-${\mu}{\textrm}{m}$ $\Gamma$-gate MHEMT fabricated in our research center using the 2D ISE-DESSIS device simulator. With this calibrated parameter set, we have obtained very good reproducibility. The device simulation on the DC and RF characteristics exhibits good reproducibility for our 0.1-${\mu}{\textrm}{m}$ -gate MHEMT device compared with the measurements. We expect that our calibration result can help design over-100-GHz MHEMT devices for better device performance.ormance.

• 한국산학기술학회논문지
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• 제11권2호
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• pp.409-413
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• 2010

실리콘 기판에 GaN 에피성장을 확인하기 위해, P형 Si(100) 기판 전면에 버퍼층으로 10 nm 두께의 코발트실리사이드를 형성시켰다. 형성된 코발트실리사이드 층을 HF로 크리닝하고, PA-MBE (plasma assisted-molecular beam epitaxy)를 써서 저온에서 500 nm의 GaN를 성막하였다. 완성된 GaN은 광학현미경, 주사탐침현미경, TEM, HR-XRD를 활용하여 특성을 확인하였다. HF 크리닝을 하지 않은 경우에는 GaN 에피택시 성장이 진행되지 않았다. HF 크리닝을 실시한 경우에는 실리사이드 표면의 국부적인 에칭에 의해 GaN성장이 유리하여 모두 GaN $4\;{\mu}m$ 정도의 두께를 가진 에피택시 성장이 진행되었다. XRD로 GaN의 <0002> 방향의 결정성 (crsytallinity)을 $\omega$-scan으로 판단한 결과 Si(100) 기판의 경우 2.7도를 보여 기존의 사파이어 기판 정도로 우수할 가능성이 있었다. 나노급 코발트실리사이드를 버퍼로 채용하여 GaN의 에피성장이 가능할 수 있었다.

• Archives of Pharmacal Research
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• 제19권1호
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• pp.36-40
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• 1996

The effect of glycyrrhetinic acid(18.betha.-glycyrrhetinic acid, GA) on histamine synthesis and release was investigated in cocultured mast cells with Swiss 3T3 fibroblasts. GA has strong dose dependent inhibitory activity for histamine synthesis and release in cocultured mast cells. GA(50 .mu.M) inhibited about 85% of histidine decarboxylase (HDC) activity. The appearance of cells staining positively with berberine sulface was also decreased in the presence of GA. It indicates that transdifferentiation of cultured mas cells (CMCs) was also inhibited.

• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.196-200
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• 1989

The physical properties related to the GaInAs/InP crystal grown by LPE are discussed in terms of both the design and operation characteristics of the GaInAs/InP Pin photodiode has cutoff frequency of 358 MHz and responsivity, 0.53 A/W (λ=1.3${\mu}{\textrm}{m}$), with dark current density as low as 4$\times$10-4/$\textrm{cm}^2$ under reverse bias voltage of 5V.