• 한국세라믹학회지
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• 제36권1호
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• pp.55-60
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• 1999

Hexamethyldisilane(Si2(CH3)6)의 single precursor를 출발원료로 사용하여 화학기상증착법으로 Si 기판위에 buffer층의 형성 없이 $\beta$-SiC의 박막을 증착하였다. Si 기판과 SiO2 mask에서 SiC 박막 증착의 선택성을 위하여 HCI의 식각 가스를 도입하였고 출발원료와 HCI 가스의 공급방법을 변화시켰다. SiC 박막 증착 과정에서 HCI 가스의 도입이 막의 표면 조도에 미치는 영향을 조사하였고 Hall 측정을 통하여 SiC 막의 전기적 특성을 조사하였다.

• The Korean Journal of Ceramics
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• 제3권3호
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• pp.163-168
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• 1997

Most of heteroepitaxial $\beta$-SiC thin films have been successfully grown on Si(100) adapting a carburizing process, by which a few atomic layers of substrate surface is chemically converted to very thin SiC layer using hydrocarbon gas sources. Using an organo-silicon precursor, bis-trimethylsilymethane (BTMSM, [$C_7H_{20}Si_2$]), heteropitaxial $\beta$-SiC thin films were successfully grown directy on Si substrate without a carburized buffer layer. The defect density of the $\beta$-SiC thin films deposited without a carburized layer was as low as that of $\beta$-SiC films deposited on carburized buffer layer. In addition, void density was also reduced by the formation of self-buffer layer using BTMSM instead of carburized buffer layer. It seems to be mainly due to the characteristic bonding structure of BTMSM, in which Si-C was bonded alternately and tetrahedrally (SiC$_4$).

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 1986년도 Priceedings Of The Third Korea-Japan Seminar On New Ceramics
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• pp.287-304
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• 1986

High quality monocrystalline $\beta$-SiC thin films were grown via two-step process of conversion of the Si(100) surface by reaction with $C_2H_4$ and the subsequent chemical vapor deposition (CVD) at $1360^{\circ}C$ and 1 atm total pressure. Four dopants, B and Al and p-type, and N and P for n-type, were also incorporated into monocrystalline $\beta$-SiC thin films during the CVD growth process. IR and Raman spectroscopies were used to evaluate the quality of the undoped $\beta$-SiC thin films and to investigate the effects of dopants on the structure of the doped $\beta$-SiC thin films. The changes in the shape of IR and Raman spectra of the doped thin films due to dopants were observed. But the XTEM micrographs except for the B-doped and annealed films showed the same density and distribution of stacking faults and dislocations as was seen in the undoped samples, The IR and Raman spectra of the B-doped and annealed films showed the broad and weak bands and one extra peak at the 850 $cm^{-1}$ respectively. The SAD pattern and XTEM micrograph of the B-doped and annealed film provided the evidence for twinning.

• 한국전기전자재료학회논문지
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• 제20권2호
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• pp.156-161
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• 2007

This paper describes the characteristics of polycrystalline ${\beta}$ or 3C (cubic)-SiC (silicon carbide) thin films heteroepitaxailly grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC film was deposited by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane: $Si_{2}(CH_{3}_{6})$ single precursor. The deposition was performed under various conditions to determine the optimized growth conditions. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_{2}$ were measured by SEM (scanning electron microscope). Finally, depth profiling was invesigated by GDS (glow discharge spectrometer) for component ratios analysis of Si and C according to the grown 3C-SiC film thickness. From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therfore, the poly 3C-SiC thin film is suitable for extreme environment, Bio and RF MEMS applications in conjunction with Si micromaching.

• 한국세라믹학회지
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• 제34권8호
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• pp.825-833
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• 1997

Silicon carbide films were deposited by low pressure chemical vapor deposition(LPCVD) using MTS(CH3SICl3) in hydrogen atmosphere on (100) Si substrate. To prevent the unstable interface from being formed on the substrate, the experiments were performed through three deposition processes which were the deposition on 1) as received Si, 2) low temperature grown SiC, and 3) carbonized Si by C2H2. The microstructure of the interface between Si substrates and SiC films was observed by SEM and the adhesion between Si substrates and SiC films was measured through scratch test. The SiC films deposited on the low temperature grown SiC thin films, showed the stable interfacial structures. The interface of the SiC films deposited on carbonized Si, however, was more stable and showed better adhesion than the others. In the case of the low temperature growth process, the optimum condition was 120$0^{\circ}C$ on carbonized Si by 3% C2H2, at 105$0^{\circ}C$, 5 torr, 10 min, showed the most stable interface. As a result of XRD analysis, it was observed that the preferred orientation of (200) plane was increased with Si carbonization. On the basis of the experimental results, the models of defect formation in the process of each deposition were compared.

• 한국결정성장학회지
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• 제9권1호
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• pp.14-19
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• 1999

Hexamethyldisilane$(Si_{2}(CH_{3})_{6})$의 single precursor를 사용하여 화학기상증착법으로 $1100^{\circ}C$에서 Si 기판의에 $\beta$-SiC 막을 증착시켰다. 증착과정 중 hexamethyldisilane/$H_{2}$ gas system에 HCI gas를 도입하여 mask 재료에 의해 부분적으로 덮여져 있는 Si 기판에서 SiC 증착의 선택성을 조사하였다. Si 기판과 mask 재료에서 SiC 증착의 선택성을 증진시키기 위해 출발물질과 HCI gas의 공급 방법을 변화시켰다. 결국, HCI gas를 도입함으로서 SiC 증착의 선택성은 증진되었고 펄스 형태로의 gas 공급 방법은 선택성을 향상시키는데 효율적이었다.

• 한국세라믹학회지
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• 제32권6호
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• pp.697-702
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• 1995

The rough growth surfaces of diamond films fabricated by the hot filament CVD were polished using thermomechanical polishing method. And then, its application to the optical windows was discussed through the measurement of transmittance in the range of infrared radiation and analysis of surfaces structure. The results were compaerd with those of the films polished with conventional mechanicla polishing. The transmittance of the mechanically polished film reached 57~66% over the whole range from 500 to 4000 cm-1. But the transmittance of the film polished with thermomechanical polishing method was reduced below 35%. This decrease in transmittance was due to both the graphitization of diamond on the polished surface and the growth of $\beta$-SiC at diamond/Si interface during polishing. The residual Fe in hte thermomechanically polished surface was confirmed by SIMS analysis. This Fe played the role of the graphitization of near surface region of the diamond film.

• 공업화학
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• 제8권4호
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• pp.589-594
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• 1997

화학증착법을 통하여 $650^{\circ}C$의 증착온도와 0.0126Torr의 산소분압인 증착조건에서 원료물질로 $\beta$-diketonates 킬레이트 화합물을 사용하여 Si(111) 및 $SrTiO_3(100)$ 기판에 $YBa_2Cu_3O_y$ 고온 초전도 박막을 제조하였다. $SrTiO_3(100)$기판에서 제조된 박막의 $T_{c,onset}$과 $T_{c.0}$는 각각 91K와 87K로 나타났다. 또한, Si(111)기판에서 제조된 박막의 $T_{c,onset}$은 91K였지만 $T_{c.0}$는 액체질소 비등점(77.3K)에서는 보이지 않았다. $SrTiO_3(100)$에 증착된 초전도 박막은 치밀하고 2차원적으로 배열된 미세구조를 갖고 있는 반면, Si(111)에 증착된 초전도 박막은 상대적으로 기공이 많으며 무질서한 미세구조를 형성하였다.

• 한국세라믹학회지
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• 제32권7호
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• pp.793-798
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• 1995

The relaxation of the intrinsic stresses in the diamond films fabricated by the hot filament CVD was studied, and it was confirmed that the tensile intrinsic stresses in the films could be controlled without any degradation in the quality of the diamond films. The tensile intrinsic stresses in the films decreased from 2.97 to 1.42 GPa when the substrate thickness increased from 1 to 10mm. This result showed that the residual stress was affected by the substrate thickness as well as by the interaction between grains. Applying of ＋50 V between the W filament and the Si substrate during deposition, the tensile intrinsic stress in the film deposited at 0 V was decreased from 2.40 GPa to 0.71 GPa. Such large decrease in the tensile intrinsic stress was due to $\beta$-SiC which acted as a buffer layer for the stress relaxation. However, the application of the large voltage above ＋200V resulted in the change of quality of the diamond film, and nearly had no effect on relaxation in the tensile intrinsic stress.

• Korean Chemical Engineering Research
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• 제53권2호
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• pp.247-252
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• 2015

${\alpha}$-상 과 ${\beta}$-상 두 가지 종류의 탄화규소(SiC) 입자 표면에 수열 합성 방법으로 ZSM-5 결정을 형성하였다. SiC는 $50{\mu}m$ 이상이 되는 크기의 입자를 사용하였으며, ZSM-5 결정이 SiC 표면에서부터 성장하도록 유도하기 위하여 합성 단계에 앞서 SiC 표면에 산화층을 형성하였으며, 수열합성 온도와 시간을 변화시켜 보았다. 그 결과 ${\beta}$-SiC는 $900^{\circ}C$ 조건에서도 산화막이 형성되었으며, 특히 $150^{\circ}C$ 합성 조건에서 ZSM-5가 ${\beta}$-SiC 표면에서부터 성장하였음이 뚜렷이 관찰되었다. $200^{\circ}C$ 조건에서는 ZSM-5의 결정의 크기가 성장할 뿐 아니라, 시간의 증가에 따라 결정의 형태가 뚜렷해지고 SiC 표면에 도포되는 양이 증가하는 것을 확인할 수 있었다.