• 제목/요약/키워드: ${\alpha}-SiC$

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알콕사이드로 부터 $\alpha$-Sialon 세라믹스의 제조 및 기계적 성질(II) (Synthesis of $\alpha$-Sialon Ceramics from an Alkoxide and Their Mechanical Properties(II))

  • 이홍림;윤창현
    • 한국세라믹학회지
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    • 제28권3호
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    • pp.189-196
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    • 1991
  • Si(OC2H5)4, commercial AlN and Y2O3 powder were used as the precusor of Si3N4, AlN, Y2O3, respectively. After Si3N4 powder was synthesized by carbothermal reduction and nitridation at 135$0^{\circ}C$ for 13h in N2 atmosphere, characteristics of synthesized powder and the ceramics sintered at 178$0^{\circ}C$ for 1h under 30MPa were investigated. In order to evaluate the reliability of sintered body, Weibull modulus was investigated. Premixing of carbon black as a reduction agent had no effect on Si(OH)4 formation, and Si3N4 powder synthesized from Si(OC2H5)4 was $\alpha$-Si3N4 single phase. Mechanical properties of sintered body were measured as follows : flexural strength ; 750MPa, fracture toughness ; 3.71Mn/3/2, hardness : 17.4GPa, thermal shock resistence temperature ; $600^{\circ}C$. Flexural strength at room temperature was 750MPa and was retained up to 110$0^{\circ}C$. The Weibull modulus of sintered body was 10.7.

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$Fe_{78}B_{13}Si_{9}$ 비정질 합금의 결정화 거동과 취성 현상 (Crystallization and Embrittlement of $Fe_{78}B_{13}Si_{9}$ Amorphous Alloy)

  • 손인진
    • 한국재료학회지
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    • 제1권3호
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    • pp.145-150
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    • 1991
  • $Fe_{78}B_{13}Si_{9}$ 비정질 합금의 결정화 거동과 취성 현상을 시차열량기 시험, x-선회절시험 및 투과 전자현미경 관찰을 통해서 조사 연구하였다. 결정화는 두단계의 발열반응으로 진행되었으며, 첫번째 단계에서는 비정질로부터 B.C.C. 구조인 $\alpha$-(Fe, Si)의 수지상이 생성되었고, 두번째 단계에서는 남아있던 비정질로부터 B.C.T 구조인 $Fe_2B$가 형성되었다. 에닐링 온도에 따른 시편의 파단과 변형율은 비정질 상태인 약 $340^{\circ}C$부터 급긱히 감소하였다.

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천이금속 영향에 따른 SiC계 도전성 세라믹 복합체의 특성 (Properties of SiC Electrocondutive Ceramic Composites according to Transition Metal)

  • 신용덕;오상수;전재덕;박영;임승혁;이동윤
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 하계학술대회 논문집 C
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    • pp.1588-1590
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    • 2004
  • The composites were fabricated, respectively, using 61vol.% SiC - 39vol.% $TiB_2$ and using 61vol.% SiC 39vol.% WC powders with the liquid forming additives of 12wt% $Al_2O_3+Y_2O_3$ by pressureless annealing at 1800$^{\circ}C$ for 4 hours. Reactions between SiC and transition metal $TiB_2$, WC were not observed in this microstructure. The result of phase analysis of composites by XRD revealed SiC(6H), $TiB_2$ and YAG($Al_5Y_3O_{12}$) crystal phase on the SiC-$TiB_2$, and SiC(2H), WC and YAG($Al_5Y_3O_{12}$) crystal phase on the SiC-WC composites. ${\beta}{\rightarrow}{\alpha}$-SiC phase transformation was ocurred on the SiC-$TiB_2$, but ${\alpha}{\rightarrow}{\beta}$-SiC reverse transformation was not occurred on the SiC-WC composites. The relative density, the flexural strength showed respectively value of 96.2%, 310.19Mpa in SiC-WC composites. The electrical resistivity of the SiC-$TiB_2$ and the SiC-WC composites is all positive temperature cofficient resistance(PTCR) in the temperature ranges from 25$^{\circ}C$ to 500$^{\circ}C$.

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AlN 첨가 SiC 세라믹스의 열전변환특성 (Thermoelectric Properties of AlN-doped SiC Ceramics)

  • 배철훈
    • 대한금속재료학회지
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    • 제50권11호
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    • pp.839-845
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    • 2012
  • The effect of an AlN additive on the thermoelectric properties of SiC ceramics was studied. Porous SiC ceramics with 48-54% relative density were fabricated by sintering the pressed ${\alpha}-SiC$ powder compacts with AlN at $2100-2200^{\circ}C$ for 3 h in an Ar atmosphere. In the undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder. With AlN addition, the reverse phase transformation of 6H-SiC to 4H-SiC was observed during the sintering process. The electrical conductivity of the AlN doped specimen was larger than that of the undoped specimen under the same conditions, which might be due to a reverse phase trans-formation. The Seebeck coefficient of the AlN doped specimen was also larger than that of the undoped specimen. The density of specimen and the amount of addition had significant effects on the thermoelectric properties.

Effect of Phase Stability on the Microstructure Development of α-SiAlON Ceramics

  • Kim, Joosun;Lee, Hae-Weon;Chen, I-Wei
    • 한국분말재료학회지
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    • 제10권2호
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    • pp.118-122
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    • 2003
  • Alpha-SiAlON ceramics having various compositions and modifying cations were investigated with respect to their phase stability, transformation kinetics. and resulting microstructures. Each composition was heat treated at 150$0^{\circ}C$ for 1h and measured the $\alpha$-SiAlON transformation. The phase-boundary composition in the single-phase $\alpha$-SiAlON region showed sluggish transformation from $\alpha$-$Si_3N_4$ to $\alpha$-SiAlON compared to the phase-center composition in the diagram. Using the different rare earth modifying cations, dependence of transformation kinetics on the phase stability in a fixed composition was also explained. By changing size of the stable u-phase region with exchanging cations, systematic change in transformation was observed. Transformation rate of $\alpha$-SiAlON at low temperature has an important role on controlling the final microstructure. Less transformation gives more chances to develop elongated grain in the microstructure.

알콕사이드로부터 Si-Al-O-N계 분말합성 I. 알콕사이드로부터 Si3N4와 $\beta$-Sialon 초미분말 합성 (Synthesis of Powder of the System Si-Al-O-N from Alkoxides I. Synthesis of Si3N4 and $\beta$-Sialon Ultrafine Powders from Alkoxides)

  • 이홍림;유영창
    • 한국세라믹학회지
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    • 제24권1호
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    • pp.23-32
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    • 1987
  • Synthesis of high purity ultrafine Si3N4 and ${\beta}$-Sialon powders was investigated via the simultaneous reduction and nitriding of amorphous SiO2, SiO2-Al2O3 system prepaerd by hydrolysis of alkoxides, using carbonablack as a reducing agent. In Si(OC2H5)4-C2H5 OH-H2 O-NH4OH system, hydrolysis rate increased with increasing reaction temperature and pH. Pure ${\alpha}$-Si3N4 was formed at 1350$^{\circ}C$ for 5 hrs in N2 atmosphere. In Si(OC2H5)4-Al(OC3H7)3-C6H6-H2 O-NH4OH system, weight loss increased as Si/Al ratio decreased. Single phase ${\beta}$-Sialon consisted of Si/Al=2 was formed at 1350$^{\circ}C$ in N2 and minor phases of ${\alpha}$-Si3N4, AIN, and X-phase were existed besides theSialon phase at other Si/Al ratios. The Si3N4 and Sialon powders synthesized from alkoxides consisted of uniform find particles of 0.05-0.2$\mu\textrm{m}$ in diameter, respectively.

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The Thermal Stability and Elevated Temperature Mechanical Properties of Spray-Deposited $SiC_P$/Al-11.7Fe-1.3V-1.7Si Composite

  • Hao, L.;He, Y.Q.;Wang, Na;Chen, Z.H.;Chen, Z.G.;Yan, H.G.;Xu, Z.K.
    • Advanced Composite Materials
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    • 제18권4호
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    • pp.351-364
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    • 2009
  • The thermal stability and elevated temperature mechanical properties of $SiC_P$/Al-11.7Fe-1.3V-1.7Si (Al-11.7Fe-1.3V-1.7Si reinforced with SiC particulates) composites sheets prepared by spray deposition (SD) $\rightarrow$ hot pressing $\rightarrow$ rolling process were investigated. The experimental results showed that the composite possessed high ${\sigma}_b$ (elevated temperature tensile strength), for instance, ${\sigma}_b$ was 315.8 MPa, which was tested at $315^{\circ}C$, meanwhile the figure was 232.6 MPa tested at $400^{\circ}C$, and the elongations were 2.5% and 1.4%, respectively. Furthermore, the composite sheets exhibited excellent thermal stability: the hardness showed no significant decline after annealing at $550^{\circ}C$ for 200 h or at $600^{\circ}C$ for 10 h. The good elevated temperature mechanical properties and excellent thermal stability should mainly be attributed to the formation of spherical ${\alpha}-Al_{12}(Fe,\;V)_3Si$ dispersed phase particulates in the aluminum matrix. Furthermore, the addition of SiC particles into the alloy is another important factor, which the following properties are responsible for. The resultant Si of the reaction between Al matrix and SiC particles diffused into Al matrix can stabilize ${\alpha}-Al_{12}(Fe,\;V)_3Si$ dispersed phase; in addition, the interface (Si layer) improved the wettability of Al/$SiC_P$, hence, elevated the bonding between them. Furthermore, the fine $Al_4C_3$ phase also strengthened the matrix as a dispersion-strengthened phase. Meanwhile, load is transferred from Al matrix to SiC particles, which increased the cooling rate of the melt droplets and improved the solution strengthening and dispersion strengthening.

액장 소결에 의한 $\beta-SiC-ZrB_2$ 복합체의 제조와 특성 (Properties and Manufacture of the $\beta-SiC-ZrB_2$ Composited Densified by Liquid-Phase Sintering.)

  • 신용덕;주진영
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권2호
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    • pp.92-97
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    • 1999
  • The mechanical and electrical properties of the hot-pressed and annealed $\beta-Sic$+39vol.%$ZrB_2$ electroconductive ceramic composites were investigated as a function of the liquid forming additives of $Al_2O_3+Y_2O_3(6:4wt%)$. In this microstructures, no reactions and elongated $\alpha$-SiC grains with equiaxed $ZrB_2$, gains were observed between $\beta-SiC$ and $ZrB_2$, and the relative density was over 97.6% of the theoretical density. Phase analysis of the composites by XRD revealedmostly of $\alpha$-SiC(6H, 4H), $ZrB_2$, and weakly $\beta-SiC$(15R) phase. The fracture toughness decreased with increasing $Al_2O_3+Y_2O_3$ contents and showed the highest of $6.37MPa.m^{\fraction ane-half}$ for composite added with 4wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity increased with increasing $Al_2O_3+Y_2O_3$contents and showed the lowest of $1.51\times10^{-4}\Omega.cm$ for composite added with $Al_2O_3+Y_2O_3$ additives at $25^{\circ}C$. This reason is the increasing tendency of pore formation according to amount of liquid forming additives $Al_2O_3+Y_2O_3$. The electrical resistivity of the composites was all positive temperature coefficient resistance(PTCR) against temperature up to $700^{\circ}C$.

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수소 희석비에 따른 실리콘 이종접합 계면에 대한 분석 및 태양전지로의 응용 (Effect of Hydrogen Dilution Ratio on The Si Hetero-junction Interface and Its Application to Solar Cells)

  • 박준형;명승엽;이가원
    • 한국전기전자재료학회논문지
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    • 제25권12호
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    • pp.1009-1014
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    • 2012
  • Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.