• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.36-43
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• 1997

FECAPS(ferroelectric capacitors) have been fabricated by RF magnetron sputtering deposition of 3000$\AA$ PZT thin films on the Pt/Ti/$SiO_2$/Si substrates and post-annealing with the temperature of $550^{\circ}C$~$650^{\circ}C$ for 10 sec~50 sec in a RTA system. The electrical characteristics of the fabricated capacitors showed the highest dielectric constant and remanent polarization[${\varepsilon_r(1kHz)$=690, $2P_r$(-5V~5V sweep)=22$\mu$C/$ \textrm{cm}^2$] in the samples annealed at $650^{\circ}C$ for 30 sec, while the lowest tangent loss and leakage current [$tan\delta(\ge10kHz)\le0.02, \; J_i(5V)=3\mu\textrm{A}/\textrm{cm}^2$]in the samples annealed at $600^{\circ}C$ for 30 sec.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.149-153
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• 2006

An attempting to produce a p-type diluted magnetic semiconductor (DMS) using $Ti_{1-x}Co_xO_{2-\delta}-based$ thin films was made by suitable control of the deposition parameters including deposition temperature, deposition pressure, and doping level using a pulsed laser deposition method. T$Ti_{0.97}Co_{0.03}O_{2-\delta}-based$ (TCO) films deposited at $500^{\circ}C$ at a pressure of $5\times10^{-6}$ Torr showed an anomalous Hall effect with p-type characteristics. On the other hand, films deposited at $700^{\circ}C$ at $5\times10^{-6}$ Torr showed n-type behaviors by a decreased solubility of cobalt. The charge carrier concentration in the p-type TCO films was approximately $7.9\times10^{22}/cm^3$ at 300 K and the anomalous Hall effect in the p-type TCO films was controlled by a side-jump scattering mechanism. The magnetoresistance (MR), measured at 5 K in p-type TCO films showed a positive behavior in an applied magnetic field and the MR ratio was approximately 3.5 %. The successful preparation of p-type DMS using the TCO films has the potential for use in magnetic tunneling junction devices.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 1993.10a
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• pp.12-26
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• 1993

본 논문에서는 브레이징법에 대하여 간략히 기술하고 접합체의 접합강도에 영향을 미치는 요인들에 대하여 조사하였다. 그리고 접합 계면의 반응 생성물의 상동정과 미세조직 관찰 결과를 보고한다. 실험 결과에 의하면 반응층은 두 층으로 이루어져 있으며, 엷은 반응층은 $\delta$-TiO,$Ti_2$O등의 Ti 산화물이고, 두꺼운 반응층은 다이아몬드 입방정의 $Ti_4$$Cu_2$O 이었다. 또 이러한 반응층의 형성 구동력이 Ti에 의한 $Al_2$$O_3$의 분해 반응에 의한 것이라는 가정을 뒷받침하는 자료로 XPS의 Al 2p 피이크의 변화를 제시한다. 끝으로 접합체의 잔류응력 분석 결과(FEM, XRD)를 타 실험자들의 연구 결과와 비교 검토하고, 더 높은 접합 강도를 얻기 위한 방법들을 정리하여 보고한다

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.781-785
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• 2016

With trend of the miniaturization and the high-functionalizing of mobile communication system, low-loss microwave dielectric materials are widely used for high frequency communication components. These dielectric materials should be co-sintered with highly electric-conducting metal such as silver or copper for high-frequency and thick film process application. Sintering temperature of $Ca(Li_{1/3}Nd_{2/3})_{0.2}Ti_{0.8}]O_{3-{\delta}}$, which has excellent dielectric properties such as ${\varepsilon}_r$ above 40, quality factor ($Q{\cdot}f_0$) above 16,000 GHz, and TCF (temperature coefficient of resonant frequency) of $-20{\sim}-10ppm/^{\circ}C$, is reported as high as $1,175^{\circ}C$, so it could not be co-sintered with silver or copper. Therefore in this study, low-temperature melting glasses of Zn-B-O and Zn-B-Si-O systems were added to $Ca[(Li_{1/3}Nb_{2/3})_{0.8}Ti_{0.2}]O_{3-{\delta}}$ to lower its sintering temperature under $900^{\circ}C$ without losing excellency of dielectric properties. With 15 weight % of Zn-B-Si-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.11g/cm^3$, ${\varepsilon}_r$ of 40.1, $Q{\cdot}f_0$ of 4,869 GHz, and TCF of $-5.9ppm/^{\circ}C$. With 15 weight % of Zn-B-O glass and sintered at $875^{\circ}C$, specimen showed density of $4.14g/cm^3$, ${\varepsilon}_r$ of 40.4, $Q{\cdot}f_0$ of 7,059 GHz, and TCF of $-0.92ppm/^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.34-37
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• 2001

In this study, the capacitance-voltage properties of $(Sr_{1-x}\cdot Ca_x)TiO_3(0.05{\leq}x{\leq}0.20)$-based grain boundary layer ceramics were investigated. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were $1480\sim1500^{\circ}C$ and 4 hours. respectively. The 2nd phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, ${\varepsilon}_r$ >50000, tan$\delta$ <0.05, ${\Delta}C$ < ${\pm}10%.$ The capacitance is almost unchanged below about 20[V] but it decreases slowly about 20[V]. The results of the capacitance-voltage properties indicated that the grain boundary was composed of the continuous insulating layers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.879-884
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• 2001

In this paper, the structural and dielectric properties of (Sr$_{l-x}$Ca$_{x}$)TiO$_3$ (0$\leq$x$\leq$0.2) -based grain boundary layer ceramics were investigated by XRD, SEM and HP4194A. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1420~152$0^{\circ}C$ and 4 hours, respectively. The average grain size and the lattice constant were decreased with increasing content of Ca. The average grain size was increased with increase of sintering temperature. The relative density of all specimens was 96~98%. The 2nd Phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, $\varepsilon$$_{r}$>50000, tan $\delta$<0.05, $\Delta$C<$\pm$10%. The appropriate Ca content was under 15 ㏖%.s under 15 ㏖%.%.

• Electrical & Electronic Materials
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• v.6 no.3
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• pp.207-213
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• 1993

Pb(Z $r_{0.54}$, $Ti_{0.46}$) $O_{3}$에 B $i_{2}$ $O_{3}$를 0.0wt%까지 첨가하여 미세구조, 유전, 압전, 성질에 미치는 영향을 고찰하였다. B $i_{2}$ $O_{3}$의 고용범위는 약 0.5~0.7wt%정도 이었고 B $i_{2}$ $O_{3}$ 첨가량이 증가함에 따라서 결정립의 크기가 감소하였다. B $i_{2}$ $O_{3}$첨가량이 증가함에 따라 고용한계까지는 $d_{33}$ , tan .delta., .xi.$_{r}$(분극후)값이 증가하였으며 Qm값과 밀도는 감소하였다. $K_{p}$ 값은 B $i^{3+}$ 가 P $b^{2+}$를 치환하므로 형성되는 Pb공공의 형성에 의해 자발분극이 증가됨에 따라 증가하였다.다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.214-214
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• 2010

The 0.65Pb($Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with $La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on $CeO_2$/YSZ/Si(001), Pt/$TiO_2$/Si and $SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of $550^{\circ}C$. Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and $CeO_2$/YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$/Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and $4.4{\mu}C/cm^2$ on $CeO_2$/YSZ/Si, Pt/TiO2/Si and STO substrates respectively.

• Progress in Superconductivity and Cryogenics
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• v.11 no.2
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• pp.1-6
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• 2009

We report a successful fabrication of $high-J_c\;NdBa_2Cu_3O_{7-{\delta}}$ (NdBCO) films on $SrTiO_3$(STO) (100) substrates by pulsed laser deposition (PLD) in a relatively wide processing window. Under various oxygen pressures controlled by either 1%$O_2$/Ar mixture gas or pure $O_2$ gas, strongly c-axis oriented NdBCO films were grown at the substrate temperature $(T_s)\;of\;800^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas and also in 400 and 800 mTorr with pure $O_2$ gas. These samples exhibited $T_c$ values over 90K and $J_c$ values of $2.8-3.5MA/cm^2$ at 77K in self-field (77K, sf). On the other hand, $J_c$ values over $1A/cm^2$ were obtained at the temperature regions of $700-830^{\circ}C$ in 800 mTorr with 1%$O_2$/Ar gas at those of $750-830^{\circ}C$ in 800 mTorr with pure $O_2$ gas. Unlike previous reports, resent results support that the PLD processing window for high-Jc NdBCO films is not narrow.

• Korean Chemical Engineering Research
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• v.57 no.1
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• pp.11-16
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• 2019

$La_{0.6}Sr_{0.4}Ti_{0.3}Fe_{0.7}O_{3-{\delta}}$(LSTF) coated $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$(BSCF) membranes which has properties of high oxygen permeability and stability to $CO_2$ were applied to a bench scale apparatus to conduct oxygen permeation experiments. Also, the membranes of the laboratory and the bench scale device were divided into three regions according to the temperature gradient in the membrane reactor for comparative analysis. While oxygen permeation experiment were conducted up to $900^{\circ}C$, temperature dependence of Cr deposition was investigated. As a result, it was confirmed that the oxygen permeability was $2.37ml/min{\cdot}cm^2$, which was significantly lower than $3.79ml/min{\cdot}cm^2$ measured in the laboratory apparatus. It was found through XRD and SEM/EDS analysis that the decrease in oxygen permeability was originated from the deposition of gaseous Cr on the membrane surface released from the alloy material of the housing. In particular, a large amount of Cr was found in the medium temperature region.