• Journal of Korean Society of Environmental Engineers
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• v.32 no.4
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• pp.357-362
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• 2010

Electricity can be directly generated from organic matter even wastewaters using a microbial fuel cell. To achieve high power in MFCs, finding factors decreasing activation and Ohmic losses is very important. In this study we determined activation loss at the anode and cathode and Ohmic loss using the current interruption technique in a H-type MFC. Activation loss at the cathode was four times higher that that of anode activation loss even if pt-coated carbon (0.5 $mg/cm^2$;10%Pt) was used as the cathode. Ohmic loss determined using current interruption technique (1146 ${\Omega}$) was almost same as the internal resistance (1167 ${\Omega}$) measured using AC impedance. The sum of activation losses at the anode and cathode was the same as the value of activation loss of the cell.

• Honam Mathematical Journal
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• v.23 no.1
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• pp.91-111
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• 2001

In this paper we prove the following : Let M be a semi-invariant submanifold with almost contact metric structure (${\phi}$, ${\xi}$, g) of codimension 3 in a complex hyperbolic space $H_{n+1}{\mathbb{C}}$. Suppose that the third fundamental form n satisfies $dn=2{\theta}{\omega}$ for a certain scalar ${\theta}({\leq}{\frac{c}{2}})$, where ${\omega}(X,\;Y)=g(X,\;{\phi}Y)$ for any vectors X and Y on M. Then M has constant eigenvalues correponding the shape operator A in the direction of the distinguished normal and the structure vector ${\xi}$ is an eigenvector of A if and only if M is locally congruent to one of the type $A_0$, $A_1$, $A_2$ or B in $H_n{\mathbb{C}}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.142-142
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• 2009

Zinc Oxide (ZnO)는 wurtzite 결정구조를 가지고 있으며, 밴드갭 에너지가 약 3.4eV인 산화물 반도체 이다. GaN가 도핑된 ZnO 박막을 Pulsed Laser Deposition (PLD) 법을 이용하여 사파이어 기판과 실리콘 기판에 각각 증착하였다. $500^{\circ}C$의 증착온도에서 1at%~10at%까지의 GaN 도핑농도에 따른 ZnO 박막의 결정성, 성분 분석을 비롯한 전기적 특성을 조사하였다. 첨가된 GaN의 농도에 따라 ZnO 박막의 결정성이 변화하였으며, 농도 변화에 상관없이 ZnO(002) 방향으로 성장함을 알 수 있었다. 또한 실리콘 기판에 증착한 GaN-doped ZnO 박막은 5at%에서 $9.3\;{\times}\;10-3{\Omega}cm$, 10at%에서 $9.2\;{\times}\;10-3{\Omega}cm$의 비저항 값을 가지며 각각 p-type 특성을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.67-68
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• 2009

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1014-1017
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• 2009

In this study, we studied the nature of thin films formed by holographic photodoping chalcogenide thin films with for use in programmable metallization cell devices(PMC), a type of ReRAM. We formatted straight conduction pathway from the internal interferences of the diffraction gratings which is builded by the holographic lithography method. We investigated the resistance change of solid-electrolyte chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. The switching characteristics of the devices applied holographic lithography method was more improved than ultraviolet exposure condition. As a result of improved resistance change effects, we can analogize that the diffraction gratings is a kind of pattern for straight conduction pathway formation inside the chalcogenide thin films.

• Proceedings of the Korean Society of Agricultural Engineers Conference
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• 2002.10a
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• pp.317-320
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• 2002

The compression index, $C'_c$ and the swelling index, $C'_s$ which are obtained from the e-log p curve of the consolidation test, are used to calculate the consolidation settlement. In this research, $C'_c$ and the two new methods of $C'_s$ i.e. $C'_{s1}$, $C'_{sm}$ for remolded clays were examined with the $({\omega}_0-{\omega}_p)$ and $(e_0-e_p)$ which are satisfied with the condition and the type of soil. Moreover, the relationships of $C'_{s1}$, and $C'_{sm}$ versus $C'_c$ were obtained.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.123-124
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• 2008

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about $1M{\Omega}$ to several hundreds of ${\Omega}$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

• Communications of the Korean Mathematical Society
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• v.35 no.2
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• pp.417-445
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• 2020

The purpose of this article is to continue the study of q, 𝜔-special functions in the spirit of Wolfgang Hahn from the previous papers by Annaby et al. and Varma et al., with emphasis on q, 𝜔-Apostol Bernoulli and Euler polynomials, Ward-𝜔 numbers and multiple q, 𝜔power sums. Like before, the q, 𝜔-module for the alphabet of q, 𝜔-real numbers plays a crucial role, as well as the q, 𝜔-rational numbers and the Ward-𝜔 numbers. There are many more formulas of this type, and the deep symmetric structure of these formulas is described in detail.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.271-275
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• 1997

We have successfully grown Cl-doped ZnSe epitaxial layers on GaAs(100) sub-strates by HWE using $ZnCl_2$ as a doping source. The Cl-doped ZnSe layers showed mirrorlike morphology and good crystallinity. It has been found that the layer exhibited an n-type conduction with low resistivity. The carrier concentration is, obtained about $10^{16}\textrm {cm}^{-3}$, where a resistivity reached 10 $\Omega \textrm {cm}$. The layer with an appropriate doping level exhibited blue photoluminescence at room temperature. The strong blue PL was obtained at the hall mobility of $100^2\textrm {cm}$/Vㆍsec.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.354-354
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• 2010

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about $1\;M{\Omega}$ to several hundreds of $\Omega$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.