반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

Langmuir-Blodgett 법을 이용한 P(VDF-TrFE) 박막 트랜지스터

P(VDF-TrFE) Thin Film Transistors using Langmuir-Blodgett Method

  • 김광호 (청주대학교 에너지.광기술융합학부)
  • Kim, Kwang-Ho (Division of Energy & Optical Technology Convergence, Cheongju University)
  • 투고 : 2020.06.15
  • 심사 : 2020.06.22
  • 발행 : 2020.06.30
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초록

The author demonstrated organic ferroelectric thin-film transistors with ferroelectric materials of P(VDF-TrFE) and an amorphous oxide semiconducting In-Ga-Zn-O channel on the silicon substrates. The organic ferroelectric layers were deposited on an oxide semiconductor layer by Langmuir-Blodgett method and then annealed at 128℃ for 30min. The carrier mobility and current on/off ratio of the memory transistors showed 9 ㎠V-1s-1 and 6 orders of magnitude, respectively. We can conclude from the obtained results that proposed memory transistors were quite suitable to realize flexible and werable electronic applications.

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참고문헌

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