• International Journal of Highway Engineering
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• v.16 no.2
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• pp.91-98
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• 2014

PURPOSES : The objective of this study is to investigate the effect of asphalt and geotextile interlayer on the fracture behavior of unbonded concrete overlay through a laboratory composite beam test. METHODS : In order to evaluate the effect of interlayer materials on the fracture behavior of unbonded concrete overlay, a laboratory test of composite beam was conducted with different types of interlayer. The test results of the composite beam using two types of geotextile interlayer with different thicknesses were compared to the test results of the composite beam using the tradition type of asphalt interlayer. The unbonded concrete overlay on the existing concrete pavement without interlayer was set for the control condition. RESULTS AND CONCLUSION : Overall, the laboratory composite beam test results did show the effect of asphalt and geotextile interlayer on the fracture behavior of composite concrete beams. The three-layer geotextile interlayer and HMA layer both increase the peak load when the first macrocrack occurs in the top concrete beam, while the HMA interlayer causes the smallest load drop percentage after the first macrocrack. The three-layer geotextile did show better performance than the single-layer geotextile through the greater peak load and smaller load drop percentage. It indicates that the thickness of geotextile interlayer will affect the fracture behavior of unbonded concrete overlay and the thicker geotextile interlayer is recommended.

• Korean Journal of Metals and Materials
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• v.46 no.2
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• pp.97-104
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• 2008

Black interlayer was introduced into between ITO and Bus electrodes to enhance a bright room contrast ratio of a plasma display panel. To measure the electrical resistance of the black interlayer, we designed two test patterns, type I and type II, of which type II pattern was successful. Using type II test pattern, the electrical resistance of the black interlayer was measured to be $300{\Omega}$ for $2{\mu}m$ thickness case and infinitely high for 4, $6{\mu}m$ thickness. This result shows that electrical resistance of the black interlayer in the ITO/black interlayer/Bus electrodes structure is a critical parameter which determines the electrical characteristics of the PDP.

• Applied Microscopy
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• v.45 no.1
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• pp.16-22
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• 2015

The reaction kinetics of the growth of Ni germanide in the Ni/Zr-interlayer/Ge system was investigated using isothermal in situ annealing at three different temperatures in a transmission electron microscope. The growth rate of Ni germanide in the Ni/Zr-interlayer/Ge system was determined to be diffusion controlled and depended on the square root of the time, with the activation energy of $1.04P{\pm}0.04eV$. For the Ni/Zr-interlayer/Ge system, no intermediate or intermixing layer between the Zr-interlayer and Ge substrate was formed, and thus the Ni germanide was formed and grew uniformly due to Ni diffusion through the diffusion path created in the amorphous Zr-interlayer during the annealing process in the absence of any intermetallic compounds. The reaction kinetics in the Ni/Zr-interlayer/Ge system was affected only by the Zr-interlayer.

• Steel and Composite Structures
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• v.39 no.3
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• pp.261-274
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• 2021

In a railway bridge, the CRTS II slab ballastless track is subjected to interlayer connection failures, such as void under slab, mortar debonding, and fastener fracture. This study investigates the influences of interlayer connection failure on the safe operation of high-speed trains. First, a train-track-bridge coupled vibration model and a bridge-track deformation model are established to study the running safety of a train passing a deformed bridge with interlayer connection failure. For each type of the interlayer connection failure, the effects of the failure locations and ranges on the track irregularity are studied using the deformation model. Under additional bridge deformation, the effects of interlayer connection failure on the dynamic responses of the train are investigated by using the track irregularity as the excitation to the vibration model. Finally, parametric studies are conducted to determine the thresholds of additional bridge deformations considering interlayer connection failure. Results show that the interlayer connection failure significantly affects the running safety of high-speed train and must be considered in determining the safety thresholds of additional bridge deformation in the asset management of high-speed railway bridges.

• Journal of the Korean Society for Heat Treatment
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• v.5 no.1
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• pp.1-12
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• 1992

In order to improve adhesive force of TiN film, we sputtered titanium as interlayer before TiN deposition by Plasma Enhanced Chemical Vapour Deposition. We observed changes of hardness and adhesion at a various thickness of titanium interlayer and also examined analysis. At the critical thickness of the titanium interlayer(about $0.2{\mu}$), adhesive force of TiN films were promoted mostly. But over the critical thickness, a marked reduction of adhesive force was showed, because of the internal stress of titanium interlayer. From AES analysis, the adhesion improvement of TiN films was mainly caused by nitrogen diffusion into titanium interlayer during TiN deposition process which relieved stress concentration at TiN coating-substrate interface.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.37-38
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• 2007

Si Interlayer의 두께가 DLC (Diamond-like Carbon) 박막의 조도 및 미세 조직에 미치는 영향을 AFM 및 TEM을 이용하여 조사하였다. DLC 박막은 이온빔 소스를 이용하여 벤젠가스를 플라즈마 분해하여 기판에 증착하였고 기판에는 2kV의 펄스전원을 인가하였다. 기판은 Si Wafer와 초경을 이용하였으며 초경의 경우 평균조도가 20nm이하가 되도록 연마하여 사용하였다. Si Interlayer는 스퍼터링 소스를 이용하여 제조하였고 증착 시간에 따라 두께를 달리하여 약 90nm까지 변화시켰다. Si Interlayer만 증착하였을 경우 조도에 큰 차이를 나타내었으나 Interlayer 위에 DLC가 코팅되면 조도가 감소하여 Si 두께와는 상관이 없는 것으로 나타났다. 본 연구에서는 Interlayer에 두께에 따른 조도변화와 함께 피막의 조직 및 경도 변화 등에 대해 고찰하였다.

• Coupled systems mechanics
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• v.12 no.6
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• pp.519-530
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• 2023

This paper presents a mathematical model suitable for the calculation of laminated glass, i.e. glass plates combined with an interlayer material. The model is based on a beam differential equation for each glass plate and a separate differential equation for the slip in the interlayer. In addition to slip, the model takes into account prestressing force in the interlayer. It is possible to combine the two contributions arbitrarily, which is important because the glass sheet fabrication process changes the stiffness of the interlayer in ways that are not easily predictable and could introduce prestressing of varying magnitude. The model is suitable for reformulation into an inverse procedure for calculation of the relevant parameters. Model consisting of a system of differential-algebraic equations, proved too stiff for cases with the thin interlayer. This novel approach covers the full range of possible stiffnesses of layered glass sheets, i.e., from zero to infinite stiffness of the interlayer. The comparison of numerical and experimental results contributes to the validation of the model.

• Journal of the Korean institute of surface engineering
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• v.43 no.3
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• pp.127-131
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• 2010

Adhesion of DLC film is very significant property that exhibits wear resistance, chemical inertness and high hardness when being deposited to metal substrate. This study was considered that change adhesion of DLC film produced by Plasma Enhanced Chemical Vapor Deposition can be presented through inserting interlayer (Cr, Si-C:H). The thickness of interlayer was result of changing adhesion and residual stress. It was showed that the maximum 12 N of adhesion is on DLC film of Cr interlayer, and that a tendency is to be increased residual stress depend on the thickness. DLC film of Si-C:H interlayer represented 16 N of adhesion at $1{\mu}m$, whereas adhesion is decreased when the thickness is increased. For the interlayer at multi-layer, it was the best that adhesion of Cr/Si-C:H/DLC film was 33 N. Si-C:H interlayer at DLC film controled adhesion of the whole film. It was relaxed the internal stress of DLC film produced by inserting Cr, Si-C:H interlayer.

• Journal of the Korean Magnetics Society
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• v.10 no.5
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• pp.203-209
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• 2000

Top synthetic spin valves with structure Ta/NiFe/CoFe/Cu/CoFe(P 1)/Ru/CoFe(P2)/FeMn/Ta on Si (100) substrate with natural oxide were prepared by dc magnetron sputtering system. We have changed only the thickness in free layers and the thickness difference (Pl-P2) in two ferromagnetic layers separated by Ru, and investigated the effect of magnetic film thickness on interlayer coupling field in spin valve with synthetic antiferromagnet. According to the decrease of free layer thickness, interlayer coupling field was increased due to the magnetostatic coupling(orange peel coupling). In case of t$\_$P1/>t$\^$P2/, interlayer coupling field agreed well with the modified Neel model suggested in conventional spin valve structures by Kools et al. However, in case of t$\_$P1/>t$\^$P2/, it was found that the interlayer coupling field was not explained by the Modified Neel Model and was confirmed the necessity of further remodeling. The dependence of Cu thickness on the interlayer coupling field was investigated and 10 Oe of interlayer coupling field was obtained when the Cu thickness is 32 $\AA$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.210-214
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• 2016

In this paper, the decrease in the contact resistance of Ni germanide/Ge contact was studied as a function of the thickness of the antimony (Sb) interlayer for high performance Ge MOSFETs. Sb layers with various thickness of 2, 5, 8 and 12 nm were deposited by RF-Magnetron sputter on n-type Ge on Si wafers, followed by in situ deposition of 15nm-thick Ni film. The contact resistance of samples with the Sb interlayer was lower than that of the reference sample without the Sb interlayer. We found that the Sb interlayer can lower the contact resistance of Ni germanide/Ge contact but the reduction of contact resistance becomes saturated as the Sb interlayer thickness increases. The proposed method is useful for high performance n-channel Ge MOSFETs.