JSTS:Journal of Semiconductor Technology and Science

  • 제16권2호
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  • Pages.215-220
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  • 2016
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Diode Embedded AlGaN/GaN Heterojuction Field-Effect Transistor

  • Park, Sung-Hoon (School of Electrical and Electronic Engineering, Hongik University) ;
  • Lee, Jae-Gil (School of Electrical and Electronic Engineering, Hongik University) ;
  • Cho, Chun-Hyung (Department of Electronic & Electrical Engineering, College of Science and Technology, Hongik University) ;
  • Choi, Yearn-Ik (Department of Electrical and Computer Engineering, Ajou University) ;
  • Kim, Hyungtak (School of Electrical and Electronic Engineering, Hongik University) ;
  • Cha, Ho-Young (School of Electrical and Electronic Engineering, Hongik University)
  • 투고 : 2015.08.29
  • 심사 : 2015.11.16
  • 발행 : 2016.04.30
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초록

Monolithically integrated devices are strongly desired in next generation power ICs to reduce the chip size and improve the efficiency and frequency response. Three examples of the embedment of different functional diode(s) into AlGaN/GaN heterojunction field-effect transistors are presented, which can minimize the parasitic effects caused by interconnection between devices.

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참고문헌

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