JSTS:Journal of Semiconductor Technology and Science

  • 제16권2호
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  • Pages.221-225
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  • 2016
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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DOI QR Code

Normally-Off Operation of AlGaN/GaN Heterojunction Field-Effect Transistor with Clamping Diode

  • Han, Sang-Woo (School of Electrical and Electronic Engineering, Hongik University) ;
  • Park, Sung-Hoon (School of Electrical and Electronic Engineering, Hongik University) ;
  • Kim, Hyun-Seop (School of Electrical and Electronic Engineering, Hongik University) ;
  • Lim, Jongtae (School of Electrical and Electronic Engineering, Hongik University) ;
  • Cho, Chun-Hyung (Department of Electronic & Electrical Engineering, College of Science and Technology, Hongik University) ;
  • Cha, Ho-Young (School of Electrical and Electronic Engineering, Hongik University)
  • 투고 : 2015.08.29
  • 심사 : 2015.10.26
  • 발행 : 2016.04.30
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초록

This paper reports a new method to enable the normally-off operation of AlGaN/GaN heterojunction field-effect transistors (HFETs). A capacitor was connected to the gate input node of a normally-on AlGaN/GaN HFET with a Schottky gate where the Schottky gate acted as a clamping diode. The combination of the capacitor and Schottky gate functioned as a clamp circuit to downshift the input signal to enable the normally-off operation. The normally-off operation with a virtual threshold voltage of 5.3 V was successfully demonstrated with excellent dynamic switching characteristics.

키워드

참고문헌

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