• Journal of Korea Society of Industrial Information Systems
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• v.19 no.2
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• pp.37-43
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• 2014

In this paper, we present the effect of forward current gain on emitter area in NPN transistors are used widely in the almost linear integrated circuits and integrated injection logic. Relations between forward current gain and emitter area were conformed with the simulation with examined calculation and experiments. At the same emitter length, as junction depth is increased, common emitter current gain is decreased. Ratio of Emitter bottom area comparing to side area increases, the emitter current gain is increased. The theory and simulation results were fitted in with the experimental data very well.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.129-137
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• 1995

AlGaAs/GaAs HBTs have been fabricated using SABM (Self-Aligned Base Metal) process technique. The mesa type HBTs were fabricated through following steps: isolation implant, wet etching, metal lift-off, and airbridge interconnection process. The fabricated HBTs with 2umx10um size emitter showed a common emitter current gain of 10 at a collector current density of Jk=100kA/cm$^{2}$, a breakdown volgate BVCEO of 8V, and the ideality factors of base and collector junctions of 1.6 and 1.1, respectively. On-wafer S-Parameter measurement at 0.5~18GHz has been made for the characterization of the common emitter HBTx with a 2umx10um size emitter. The extrapolated current gain cut-off frequency of ft=30GHz and maximum oscillation frequency of fmax=23 GHz were obtained at a collector current density of Jc=70kA/cm$^{2}$. Small signal HBT equivalent circuit was extracted from the S-Parameter data.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.461-464
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• 1998

Self-aligned AlGaAs/GaAs HBTs with the emitter area of 1.5*10.mu.$m^{2}$ were fabricated usng $WN_{x}$ as emitter metal. Their DC and RF characteristics were investigated. The common emitter current gain was 45 at $J_{c}$ = 6*$10^{4}$A/$cm^{2}$. From the Gummel plot, the ideality factors of $I_{c}$ and $I_{B}$ were 1.18 and 1.70, respectively. Emitter and base resistance were extracted from voltage drop region in gummel plot, and their values were 5.3.ohm. and 38.2.ohm.. The extrapolated $f_{T}$ = 72GHz and $f_{max}$ = 81GHz were obtained at $V_{CE}$ = 2V.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.9-12
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• 2000

InP/lnGaAs heterojunciton phototransistors (HPTs) with transparent emitter contacts were fabricated and characterized. Indium Tin Oxide was RF sputtered for the emitter contacts. By comparison with InP/InGaAs HBTs, the dc characteristics of InP/lnGaAs HPTs demonstrated offset voltage due to ITO emitter contacts and similar common emitter current gain. The model parameters were extracted and a simple SPICE simulations were performed.

• Journal of the Korean Institute of Telematics and Electronics
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• v.6 no.1
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• pp.19-22
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• 1969

Detailed analysis has been developed concerning the transfer function and stability condition of the logarithmic amplifier using a common emitter transistor as a feed-back element. The analysis shows that input current vs output voltage transfer characteristics is accurately ogarithmic through entire operating current, and the time constant depends on input capcitance and collector-emitter equivalent resistance. Also the minimum value of imput capacitance required to stabilize the system is derived.

• Journal of Advanced Navigation Technology
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• v.10 no.3
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• pp.256-262
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• 2006

This paper proposes a new predistortion linearizer to compensate for AM/AM and AM/PM in the nonlinear characteristics of amplifier. This consists of common-emitter amplifier and schottky diode that is connected between emitter and ground. When effective resistance of the schottky diode with bias condition varies, common-emitter amplifier with series feedback has a increase of amplitude and expansion of phase. This makes a amplifier nonlinear characteristics are to be improved. The proposed linearizer and amplifier has been manufactured and tested to operate in cellular base station frequency (869~894MHz). The test results show that third order intermodulation distortion (IMD3) cab be removed by more than 10.4dB in case of CW 2-tone signals ${\Delta}f$=1MHz, and the adjacent channel power ratio (ACPR) also can be improved by more than 9.6dB for CDMA IS-95 1FA signals.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.7 s.337
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• pp.1-4
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• 2005

A four-channel photoreceiver ways have been realized in a 0.8$\mu$m Si/SiGe HBT technology for the applications of parallel optical interconnects. The receiver array includes four-channel transimpedance amplifiers (TIAs) and p-i-n photodiodes, where the TIAs exploit a common-emitter (CE) input configuration. Measured results demonstrate that the four-channel CE TIA array provides 3.9GHz bandwidth, 62dB$\Omega$ transimpedance gain, 7.5pA/sqrt(Hz) average noise current spectral density, and less than -25dB crosstalk between adjacent channels with 40mW power dissipation.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.395-398
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• 2004

High-linearity voltage-controlled current sources (VCCSs) circuits for wide voltage-controlled oscillator and automatic gun control were proposed. The VCCS consists of emitter follower for voltage input, two common-base amplifier which their emitter connected for current output, and current mirror which connected the two amplifier for large output current. The VCCS used only five transistors and a resistor without an extra bias circuit. Simulation results show that the VCCS has current output range from 0mA to 300mA over the control voltage range from 1V to 4.8V at supply voltage 5V. The linearity error of output current has less than $1.4\%$ over the current range from 0A to 300mA.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.621-622
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• 2006

This paper presents the design of LVDS(Low-Voltage-Differential-Signaling) driver circuit for Gb/s-per-pin operation using BiCMOS process technology. To reduce chip area, LVDS driver's switching devices were replaced with lateral bipolar devices. The designed lateral bipolar transister's common emitter current gain($\beta$) is 20 and device's emitter size is 2*10um. Also the proposed LVDS driver is operated at 2.5V and the maximum data rate is 2.8Gb/s approximately.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.51-59
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• 1993

A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.